997 patents
Page 6 of 50
Utility
Method of manufacturing semiconductor device
4 Apr 23
A method of manufacturing a semiconductor device, including preparing a semiconductor wafer having first and second main surfaces opposite to each other, forming a photoresist film on the first main surface of the semiconductor wafer, forming a plurality of openings at predetermined positions in the photoresist film, cleaning the semiconductor wafer with water after the openings are formed, drying the semiconductor wafer by rotating the semiconductor wafer around a center axis that is orthogonal to the first main surface of the semiconductor wafer, to thereby generate a centrifugal force to cause the water that is left in the openings of the photoresist film to fly off the semiconductor wafer, and ion-implanting a predetermined impurity by a predetermined acceleration energy from the first main surface of the semiconductor wafer, using the photoresist film as a mask, after the drying.
Naoko Kodama
Filed: 29 Jan 21
Utility
Semiconductor device
4 Apr 23
A main semiconductor device element is SiC-MOSFETs with a trench gate structure, the main semiconductor device element having main MOS regions responsible for driving the MOSFETs and main SBD regions that are regions responsible for SBD operation.
Yasuyuki Hoshi
Filed: 29 Jul 21
Utility
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4 Apr 23
A driving apparatus includes: a driving section configured to drive a control terminal of a semiconductor device according to a control signal input from an outside, the semiconductor device including a first main terminal, a second main terminal, and the control terminal that is configured to control a connection state between the first main terminal and the second main terminal that are connected in parallel with a snubber; and a drive control section configured to lower a drive capability of the driving section during a period in which an inter-main-terminal voltage between the first main terminal and the second main terminal changes by a predetermined reference voltage difference owing to switching of the semiconductor device, compared with other at least some periods.
Seiki Igarashi
Filed: 26 Oct 21
Utility
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4 Apr 23
A semiconductor device is provided, comprising a plurality of circuit portions, and a first connection portion and a second connection portion that are formed of planar conductive materials and connected to any of the circuit portions, wherein the first connection portion and the second connection portion are arranged with respective main surfaces facing each other, the first connection portion and the second connection portion each comprising a circuit connection end connected to the circuit portions, a path restriction portion for restricting a current path in the main surface, directions of currents flowing through the current paths between the path restriction portions and the circuit connection ends are different in the first connection portion and the second connection portion.
Sayaka Yamamoto
Filed: 26 Aug 20
Utility
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21 Mar 23
A control device for a mobile body is equipped with a charging and electrical power supplying unit including a first smoothing capacitor positioned on a connector side and a second smoothing capacitor positioned on a battery side, and a control unit configured to control the charging and electrical power supplying unit.
Mitsuteru Yano, Shinichi Yokoyama, Masahiko Sato, Tomoki Nakahara
Filed: 23 Sep 21
Utility
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21 Mar 23
An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.
Keiji Okumura
Filed: 28 Sep 21
Utility
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21 Mar 23
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches.
Hiroyuki Fujisawa, Akimasa Kinoshita
Filed: 26 Jan 21
Utility
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21 Mar 23
A semiconductor module is provided with: a case having a frame that surrounds a substrate and a terminal block formed extending inward from an inner wall surface of the frame; a terminal having one end extending outward from the frame, and another end extending inward from the frame and being secured to a top face of the terminal block; a wiring member that electrically connects the terminal and a semiconductor element on the substrate; and an encapsulating resin that encapsulates the other end of the terminal, the wiring member, and the semiconductor element inside the case.
Naoyuki Kanai, Yuichiro Hinata, Yuta Tamai
Filed: 30 Jun 21
Utility
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14 Mar 23
A beverage dispensing apparatus for preparing a beverage and dispensing the prepared beverage into a container.
Yuki Ninomiya, Koichi Ito
Filed: 28 Feb 20
Utility
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14 Mar 23
A semiconductor device includes a wiring board that includes a first insulating layer, a first conductive layer arranged over the first insulating layer, a second conductive layer arranged under the first insulating layer, the wiring board further including a magnetic layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher specific magnetic permeability than the first and second conductive layers, and a carbon layer that is arranged between the first insulating layer and the first or second conductive layer and that has a higher thermal conductivity in a planary direction than the first and second conductive layers; a semiconductor chip electrically connected to the first and second conductive layers; and an insulating circuit board arranged separately from the wiring board and that has the semiconductor chip mounted thereon.
Takahiro Mitsumoto, Akira Hirao, Motohito Hori
Filed: 2 Aug 21
Utility
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14 Mar 23
A linear motor includes an armature that includes a coil and a core made of a soft magnetic material, and a field magnet that includes a permanent magnet generating a magnetic field for the armature.
Terukazu Akiyama, Satoshi Imamori, Yusuke Konno
Filed: 22 Jun 21
Utility
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14 Mar 23
Provided is a semiconductor device comprising a high-side switching device, a low-side switching device, a high-side driver configured to turn on/off the high-side switching device, a low-side driver configured to turn on/off the low-side switching device, a high-side driving external terminal configured to supply a power supply voltage for driving the high-side driver, and a protection circuit section connected to the high-side driving external terminal.
Masashi Hoya
Filed: 28 Sep 21
Utility
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14 Mar 23
A data compression method includes inputting a data sequence that includes first data strings and second data strings alternating with each other, each of the first data strings containing one or more first data all of which have a same predetermined value, each of the second data strings containing one or more second data different from the predetermined value, determining first numbers and second numbers from a beginning of the input data sequence sequentially, each of the first numbers being a number of the first data in a respective one of the first data strings, and each of the second numbers being a number of the second data in a respective one of the second data strings, and arranging the first numbers, the second numbers, and the second data strings in a cyclic manner to generate compressed data.
Kenji Takatsukasa
Filed: 26 Jul 21
Utility
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7 Mar 23
A semiconductor module, including a ceramic board, a circuit pattern metal plate formed on a principal surface of the ceramic board, an external connection terminal bonded, via a solder, to the circuit pattern metal plate, and a low linear expansion coefficient metal plate located between the circuit pattern metal plate and the external connection terminal.
Yoshinori Uezato
Filed: 28 Dec 20
Utility
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7 Mar 23
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, a gate insulating film, gate electrodes, and an interlayer insulating film.
Yasuyuki Kawada
Filed: 28 May 21
Utility
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7 Mar 23
Provided are a semiconductor element and a semiconductor device capable of achieving on-resistance reduction and miniaturization.
Takeyoshi Nishimura
Filed: 23 Aug 19
Utility
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28 Feb 23
A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.
Morio Iwamizu
Filed: 28 Jun 19
Utility
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28 Feb 23
A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors.
Kei Minagawa
Filed: 25 Feb 21
Utility
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21 Feb 23
A method of manufacturing a semiconductor device, including: preparing a power semiconductor chip, a lead frame having a die pad part and a terminal part integrally connected to the die pad part, and an insulating sheet in a semi-cured state; disposing the power semiconductor chip on a front surface of the die pad part and performing wiring; encapsulating the lead frame and the power semiconductor chip with an encapsulation raw material in a semi-cured state, to thereby form a semi-cured unit, the terminal part projecting from the semi-cured unit, and a rear surface of the die pad part being exposed from a rear surface of the semi-cured unit; pressure-bonding a front surface of the insulating sheet to the rear surface of the semi-cured unit to cover the rear surface of the die pad part; and curing the semi-cured unit and the insulating sheet by heating.
Masanori Tanaka
Filed: 26 Jan 21
Utility
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21 Feb 23
A semiconductor device including an insulating circuit board.
Hiroyuki Nogawa
Filed: 22 Jan 21