997 patents
Page 9 of 50
Utility
Semiconductor device with a substrate having depressions formed thereon
6 Dec 22
A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3.
Yoshinori Oda, Yoshinori Uezato
Filed: 28 Dec 20
Utility
Terminal protection circuit of semiconductor chip
6 Dec 22
A terminal protection circuit of a semiconductor chip, including a first pad serving as a ground terminal of the semiconductor chip, a ground line extending along an outer periphery of the semiconductor chip and being connected to the first pad, and an overcurrent sensing circuit.
Hiroshi Maruyama
Filed: 25 Nov 20
Utility
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29 Nov 22
A power semiconductor module including at least first and second power semiconductor elements, includes a first terminal, a first gate terminal, a second terminal, a second gate terminal, a third terminal and a common terminal.
Tadahiko Sato
Filed: 1 Jun 20
Utility
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29 Nov 22
A current generation circuit includes a metal-oxide-semiconductor (MOS) transistor having a source terminal coupled to one line of a power supply line and a ground line, a voltage generation circuit configured to generate a first voltage corresponding to a resistance value of wiring between the one line and the source terminal, and a control circuit configured to cause the MOS transistor to generate a predetermined current based on the first voltage.
Takahiro Mori
Filed: 26 Aug 21
Utility
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29 Nov 22
A drive circuit of a voltage-controlled power semiconductor element, including first to fourth switching elements, first and second delay circuits, an overcurrent detection circuit, a slow shutdown detection circuit and a flip-flop.
Masanari Fujii
Filed: 30 Sep 20
Utility
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29 Nov 22
It is desirable to improve the accuracy of voltage control in the grid interconnection device for supplying the power generated by the distributed power source to the interconnection point.
Songhao Yin, Takayuki Nagakura
Filed: 24 Jun 21
Utility
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29 Nov 22
A switching control circuit that controls switching of a switching device, the switching control circuit includes a frequency modulation circuit that generates an oscillator signal, and modulates a frequency of an oscillator signal with a predetermined frequency and a modulation index of two or more, and a drive circuit that drives the switching device in response to a signal corresponding to the modulated oscillator signal, the predetermined frequency being higher than a frequency indicative of a value that is a quarter of a half width of a bandpass filter used for measuring noise generated when the switching device is driven.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 25 Sep 20
Utility
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29 Nov 22
An electronic circuit, including a first switching device that contains a first semiconductor material with a first band gap, and a second switching device that is coupled in parallel to the first switching device, and contains a second semiconductor material with a second band gap smaller than the first band gap.
Tadahiko Sato
Filed: 25 May 21
Utility
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29 Nov 22
A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element.
Kenichiro Sato
Filed: 21 Apr 21
Utility
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29 Nov 22
A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern.
Mitsuhiro Kakefu, Hiroaki Ichikawa
Filed: 27 Aug 20
Utility
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29 Nov 22
A method of manufacturing a silicon carbide substrate having a parallel pn layer.
Yasuyuki Kawada
Filed: 23 Oct 20
Utility
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22 Nov 22
Shinjiro Suzuki, Tomoki Hasegawa, Fengqiang Zhu
Filed: 4 Jan 21
Utility
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22 Nov 22
Plural sessions of proton irradiation are performed by differing ranges from a substrate rear surface side.
Kouji Mukai, Souichi Yoshida
Filed: 15 Oct 20
Utility
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22 Nov 22
Recently, it is desired to improve responsiveness in case where a drop in the output voltage is prevented.
Nobuyuki Hiasa
Filed: 24 Aug 20
Utility
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22 Nov 22
The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated.
Miwako Fujita, Michio Tamate, Tamiko Asano, Yuhei Suzuki, Ryu Araki
Filed: 25 Nov 19
Utility
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15 Nov 22
A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base.
Kazunaga Onishi, Takashi Masuzawa, Hiromichi Gohara
Filed: 26 Mar 20
Utility
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15 Nov 22
A method of manufacturing a semiconductor integrated circuit includes forming a body region having a second conductivity type in an upper portion of a support layer having a first conductivity type and forming a well region having a second conductivity type in an upper portion of the support layer.
Yoshiaki Toyoda
Filed: 5 Jan 21
Utility
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15 Nov 22
Provided is a testing apparatus for testing a semiconductor device including a first main terminal to which a first power source voltage is applied and a second main terminal to which a second power source voltage is applied, comprising: a condition setting unit for setting a changing speed of a terminal voltage of the first main terminal at turn-off of the device; an operation controlling unit for turning off the device under a condition set by the condition setting unit; and a determining unit for screening the device based on an operation result of the device, wherein: a time waveform of the terminal voltage at turn-off of the device includes a maximum changing point where a changing speed becomes maximum; and the condition setting unit sets the changing speed at a first set voltage higher than a voltage at the maximum changing point, to a predetermined value.
Tetsutaro Imagawa
Filed: 24 Jun 21
Utility
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15 Nov 22
Provided is a short-circuit determining apparatus comprising: a sensor configured to detect a time change of a main current flowing between a first main terminal and a second main terminal of a switching device having a control terminal, the first main terminal and the second main terminal; an integration unit configured to integrate an output of the sensor; a polarity determining unit configured to determine a polarity of the output of the sensor; and a short-circuit determining unit configured to determine a short-circuit of the switching device, based on a comparison result of an output of the integration unit and a short-circuit determination reference value according to a determination result of the polarity.
Ryoga Kiguchi, Kunio Matsubara
Filed: 25 May 21
Utility
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15 Nov 22
Provided is a driver circuit that controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line.
Sho Nakagawa, Morio Iwamizu
Filed: 28 Jul 20