997 patents
Page 11 of 50
Utility
Semiconductor device and method of manufacturing semiconductor device
27 Sep 22
A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set.
Toshio Denta, Masanori Tanaka
Filed: 23 Jun 20
Utility
Semiconductor device and fabrication method for semiconductor device
20 Sep 22
A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.
Motoyoshi Kubouchi, Kosuke Yoshida, Soichi Yoshida, Koh Yoshikawa, Nao Suganuma
Filed: 11 Jun 20
Utility
Semiconductor device
20 Sep 22
A semiconductor device is an IGBT of a trench-gate structure and has a storage region directly beneath a p−-type base region.
Tohru Shirakawa
Filed: 22 Oct 19
Utility
Semiconductor device
20 Sep 22
A semiconductor device includes: a plurality of semiconductor chips each including a first main electrode on a top surfaces and including a second main electrode and a control electrode on a bottom surface; a first common main electrode connected to the first main electrodes; a printed board including a control wiring part and a main wiring part provided on a bottom surface of an insulating layer, and a common control electrode and a second common main electrode provided on a top surface of the insulating layer and electrically connected to the control wiring part and the main wiring part; projection electrodes bonding the control electrodes to the control wiring part; projection electrodes bonding the second main electrodes to the main wiring part; and a sealing member sealing the semiconductor chips and exposing the first common main electrode, the common control electrode, and the second common main electrode.
Hideyo Nakamura
Filed: 26 May 21
Utility
Automatic vending machine
13 Sep 22
An automatic vending machine includes: a product housing rack including product housing shelves each including a product housing path, and a product discharger; a first stopper configured to be movable between a protrusion position and a retract position, and to tilt such that a free end side of a holding portion is positioned at a product discharge port; a second stopper configured to be movable between a retract position and a protrusion position, and to press a vending product when protruding; a link configured to move each of the first and the second stopper to the protrusion and the retract position; and a driver configured to drive the link, wherein the second stopper includes ribs formed on a surface facing the product housing path, the ribs being configured to extend from a base end part toward a holding portion of the second stopper.
Katsuhiko Fukuda, Tsutomu Iwako, Yasuo Nakazato, Yasuhiro Yamazaki, Takashi Nishiyama
Filed: 1 Jun 20
Utility
Cooler
13 Sep 22
A cooler of the present invention is provided with a case having a top plate, a bottom plate, and a side plate, cooling fins disposed inside the case, and a flow path for cooling fluid that comes into contact with the cooling fins and that flows through the interior of the case, the cooler cooling an object to be cooled in contact with the top plate or the bottom plate.
Ryoichi Kato, Yoshinari Ikeda, Hiromichi Gohara, Tomoyuki Miyashita, Shingo Otake
Filed: 2 Mar 20
Utility
Switching control circuit and power supply circuit
6 Sep 22
A switching control circuit for controlling a power supply circuit having a transformer and a transistor.
Yoshinori Kobayashi, Jian Chen
Filed: 24 Aug 20
Utility
Semiconductor device
6 Sep 22
A main semiconductor device element is a vertical MOSFET with a trench gate structure, containing silicon carbide as a semiconductor material, and having first and second p+-type regions that mitigate electric field applied to bottoms of trenches.
Yasuyuki Hoshi
Filed: 30 Mar 21
Utility
Semiconductor device
6 Sep 22
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth.
Yusuke Kobayashi, Shinsuke Harada, Takahito Kojima
Filed: 15 Dec 20
Utility
Semiconductor module and method for manufacturing the same
6 Sep 22
Provided are a semiconductor module capable of easily connecting extraction pin with a wiring board and having reliable connections, and a method for manufacturing the same.
Naoyuki Kanai, Yuichiro Hinata
Filed: 28 Apr 21
Utility
Semiconductor device and test method thereof
30 Aug 22
A semiconductor device includes an internal power supply generation circuit that generates an internal power supply voltage from an external power supply voltage and a non-volatile memory circuit.
Tetsuya Kawashima
Filed: 27 Apr 20
Utility
Semiconductor device and method of manufacturing semiconductor device
30 Aug 22
The semiconductor device includes an insulating circuit substrate mounted with a semiconductor element; an external terminal; a base including a support portion; an adhesive sheet; and a sealing portion covering the semiconductor element.
Yuji Ichimura
Filed: 25 Jul 19
Utility
Semiconductor device
30 Aug 22
In an inactive region of an active region, a gate pad, a gate poly-silicon layer, and a gate finger are provided at a front surface of a semiconductor substrate, via an insulating film.
Keiji Okumura
Filed: 28 Sep 20
Utility
Semiconductor device
30 Aug 22
A semiconductor device that allows easy hole extraction is provided.
Tatsuya Naito
Filed: 10 Feb 21
Utility
Superjunction semiconductor device including parallel PN structures and method of manufacturing thereof
30 Aug 22
A semiconductor device has an active region through which current flows and a termination structure region.
Toshiaki Sakata
Filed: 2 Mar 20
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
30 Aug 22
After trench etching, trench corner portions are rounded by hydrogen annealing at a temperature of at least 1500 degrees C.
Makoto Utsumi, Yasuyuki Kawada, Aki Takigawa
Filed: 30 Oct 20
Utility
Sensor device configured to reduce output errors due to temperature characteristics
23 Aug 22
It is desired to further reduce output errors which are caused by temperature characteristics.
Kazuhiro Matsunami, Mutsuo Nishikawa, Ryohei Uzawa
Filed: 19 Feb 20
Utility
Semiconductor device and method of manufacturing semiconductor device
23 Aug 22
A semiconductor device has transistor portions and diode portions.
Kazuki Kamimura, Motoyoshi Kubouchi
Filed: 20 Apr 21
Utility
Semiconductor module and method of manufacturing semiconductor module
23 Aug 22
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.
Yasuaki Hozumi
Filed: 2 Apr 20
Utility
Semiconductor device and method of manufacturing semiconductor device
23 Aug 22
A semiconductor device is provided, including: a semiconductor substrate having a first conductivity type of drift region; a transistor section having a gate trench section on an upper surface of the semiconductor substrate; a diode section having a first conductivity type of cathode region on a lower surface of the semiconductor substrate, the cathode region having a higher doping concentration than the drift region; and a buffering region arranged between the transistor section and the diode section, the diode section having a first upper surface side lifetime control region where a first valley portion is provided in a carrier lifetime distribution in a depth direction of the semiconductor substrate, and the buffering region having a second upper surface side lifetime control region where a second valley portion is provided in the carrier lifetime distribution, the second valley portion being wider, in the depth direction, than the first valley portion.
Soichi Yoshida
Filed: 26 Mar 20