997 patents
Page 7 of 50
Utility
Electronic apparatus and manufacturing method thereof
21 Feb 23
An electronic device includes a first part, and a circuit plate including a circuit substrate, a plating film made of a plating material and being disposed on a front surface of the substrate.
Naoki Takizawa
Filed: 5 Jan 21
Utility
Electrophotographic photoconductor, method of manufacturing the same, and electrophotographic device
21 Feb 23
Shinjiro Suzuki, Fengqiang Zhu, Masaru Takeuchi, Tomoki Hasegawa
Filed: 29 Jan 21
Utility
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14 Feb 23
A semiconductor module includes at least two semiconductor elements connected in parallel; a control circuit board placed between the at least two semiconductor elements; a control terminal for external connection; a first wiring member that connects the control terminal and the control circuit board; and a second wiring member that connects a control electrode of one of the at least two semiconductor elements and the control circuit board, wherein the second wiring member is wire-bonded from the control electrode towards the control circuit board, and has a first end on the control electrode and a second end on the control circuit board, the first end having a cut end face facing upward normal to a surface of the control electrode and the second end having a cut end face facing sideways parallel to a surface of the control circuit board.
Takafumi Yamada, Kohei Yamauchi, Tatsuhiko Asai, Hiromichi Gohara
Filed: 1 Mar 21
Utility
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14 Feb 23
A pressure sensor element and a receiving circuit are formed on an IC chip.
Masashi Akahane
Filed: 25 Jan 18
Utility
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14 Feb 23
There is provided a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent based on a result of comparing a sense voltage with a sense reference voltage, the sense voltage corresponding to a sense current flowing through the current detection terminal; and an adjustment unit that adjusts the sense reference voltage based on a detection result of the current detection unit.
Kazumi Takagiwa
Filed: 30 Jun 20
Utility
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14 Feb 23
Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.
Harunobu Ikeda
Filed: 25 Nov 21
Utility
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14 Feb 23
A semiconductor module includes a semiconductor device, and a cooling device.
Takafumi Yamada, Hiromichi Gohara, Daiki Yoshida
Filed: 28 Jul 20
Utility
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7 Feb 23
In a contact hole of an interlayer insulating film, a tungsten film forming a contact plug is embedded via a barrier metal.
Takaaki Suzawa
Filed: 7 Oct 21
Utility
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7 Feb 23
A mounting structure for a heater element includes a heater element having a surface to be cooled, a board on which the heater element is mounted, a cooling member that cools the surface to be cooled of the heater element mounted on the board, and a supporting member temporarily fixed to the board, the supporting member temporarily fixing the heater element.
Shun Fukuchi
Filed: 22 Mar 21
Utility
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7 Feb 23
Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.
Tohru Shirakawa, Yasunori Agata, Kaname Mitsuzuka
Filed: 25 May 21
Utility
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7 Feb 23
A semiconductor device includes a first MOS structure portion that includes, as its elements, a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first second-semiconductor-layer of a second conductivity type, first semiconductor regions of the first conductivity type, and first gate insulating films, and a second MOS structure portion that includes, as its elements, the substrate, the first semiconductor layer, a second second-semiconductor-layer, second first-semiconductor-regions of the first conductivity type, and second gate insulating films.
Yasuyuki Hoshi
Filed: 29 Jan 21
Utility
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7 Feb 23
A semiconductor device including a plurality of power modules each of which includes a power semiconductor switching element that has a temperature detection diode, and a drive circuit that has an output circuit for switching on and off the power semiconductor switching element, and that outputs a warning signal for calling attention if the value of the forward voltage of the temperature detection diode becomes equal to or smaller than a first reference voltage value, and that outputs a protection operation signal for stopping the on/off operation of the power semiconductor switching element if the value of the forward voltage becomes equal to or smaller than a second reference voltage value smaller than the first reference voltage value.
Kei Minagawa
Filed: 28 Jul 21
Utility
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31 Jan 23
A semiconductor device is provided.
Takahiro Tamura, Yuichi Onozawa, Misaki Takahashi
Filed: 18 Nov 21
Utility
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31 Jan 23
A main semiconductor device element has first and second p+-type high-concentration regions that mitigate electric field applied to bottoms of trenches.
Yasuyuki Hoshi
Filed: 28 Apr 21
Utility
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31 Jan 23
Semiconductor device including first semiconductor layer of a first conductivity type, second semiconductor layer of a second conductivity type at a surface of the first semiconductor layer, third semiconductor layer of the first conductivity type selectively provided at a surface of the second layer, and gate electrode embedded in a trench via a gate insulating film.
Makoto Shimosawa
Filed: 10 Dec 20
Utility
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31 Jan 23
First p+-type regions are provided directly beneath trenches, separate from a p-type base region and facing bottoms of the trenches in a depth direction.
Akimasa Kinoshita
Filed: 3 Aug 20
Utility
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24 Jan 23
A semiconductor device, including a semiconductor module, a positioning member and a printed board.
Tadahiko Sato
Filed: 25 Mar 21
Utility
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24 Jan 23
A semiconductor integrated circuit includes a high-potential-side circuit region, a high-voltage junction termination structure surrounding the high-potential-side circuit region, and a low-potential-side circuit region surrounding the high-potential-side circuit region via the high-voltage junction termination structure which are integrated into a single chip, and wherein a first distance between a looped well region and a buried layer in a region in which a first contact region is formed is smaller than a second distance between the looped well region and the buried layer in a region in which a carrier reception region is formed.
Masaharu Yamaji
Filed: 9 Mar 20
Utility
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24 Jan 23
A switching control circuit for controlling switching of a transistor in a power supply circuit, such that the power supply circuit generates an output voltage at a target level.
Shinji Matsumoto
Filed: 23 Oct 20
Utility
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17 Jan 23
In a silicon carbide semiconductor device in which a contact electrode is formed on a single-crystal silicon carbide semiconductor substrate, a barrier metal (titanium nitride layer) covers an interlayer insulating film in a region other than a contact hole, and a contact electrode of a predetermined electrode material is formed only in a region on the silicon carbide semiconductor substrate in the contact hole opened in the interlayer insulating film on the silicon carbide semiconductor substrate.
Masahide Gotoh
Filed: 11 Dec 19