997 patents
Page 5 of 50
Utility
Analyzing apparatus, analysis method, and computer-readable medium
25 Apr 23
Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.
Norihiro Komiyama, Masahiro Sasaki, Yuichi Onozawa, Shoji Yamada
Filed: 22 Mar 22
Utility
Semiconductor device having semiconductor chip formed on wiring part, and method of manufacturing the same
25 Apr 23
A semiconductor device, including a semiconductor chip having a first electrode on a rear surface thereof, a laminated substrate including a heat dissipation board laminated on a rear surface of an insulating board, and a case.
Tomoyuki Wakiyama
Filed: 23 Jun 21
Utility
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25 Apr 23
A semiconductor device, including a metal base plate having a front surface on which a disposition area is set apart from a central portion of the metal base plate, and a board placed over the disposition area with a solder therebetween.
Naoki Takizawa
Filed: 23 Oct 20
Utility
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25 Apr 23
A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode.
Takumi Fujimoto
Filed: 4 May 21
Utility
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25 Apr 23
A semiconductor device, including a first semiconductor layer of the first conductivity type formed on a semiconductor substrate, a first semiconductor region of the first conductivity type, a first base region and a first base region, both of a second conductivity type, selectively provided in the first semiconductor layer, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer, a second semiconductor region of the first conductivity type selectively provided in the second semiconductor layer, a trench penetrating the second semiconductor layer and the second semiconductor region, a gate electrode provided in the trench, an interlayer insulating film provided on the gate electrode, a second base region in contact with a bottom of the trench, a first electrode in contact with the second semiconductor layer and the second semiconductor region, and a second electrode provided on the back of the semiconductor substrate.
Keiji Okumura
Filed: 18 Jan 22
Utility
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18 Apr 23
A power converter includes a power conversion controller configured to determine whether or not an output terminal is misconnected to a system power supply based on a current between a power converter and the output terminal and a voltage between the power converter and the output terminal, and to perform a control to stop power conversion in the power converter when determining that the output terminal is misconnected to the system power supply.
Takashi Iida, Mitsuteru Yano
Filed: 31 Mar 21
Utility
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18 Apr 23
A power supply circuit having a first capacitor, a transformer including a primary coil having a voltage of the first capacitor applied thereto, a secondary coil and an auxiliary coil, a second capacitor having a voltage from the auxiliary coil applied thereto, a transistor controlling an inductor current flowing through the primary coil, a control circuit outputting a first control signal when supply of the input voltage is unstopped, or is stopped yet a voltage of the second capacitor reaches a first level, and outputting a second control signal thereafter when the voltage of the second capacitor further reaches a second level, a first drive circuit outputting a first drive signal for switching control of the transistor in response to the first control signal, and a second drive circuit outputting a second drive signal for controlling on-resistance of the transistor to discharge the first capacitor, in response to the second control signal.
Takato Sugawara
Filed: 22 Dec 20
Utility
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18 Apr 23
A snubber apparatus includes N parallel charge paths, each of which has a positive-side capacitor, a first diode, and a negative-side capacitor sequentially connected in series between a positive-side terminal and a negative-side terminal, and that allows current to flow from the positive-side terminal's side to the negative-side terminal's side.
Qichen Wang, Ryuji Yamada
Filed: 25 Nov 21
Utility
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18 Apr 23
An integrated circuit for a power supply circuit.
Yuta Endo, Takato Sugawara
Filed: 27 Aug 21
Utility
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18 Apr 23
A semiconductor device, including a substrate having an insulating plate and a conductive plate formed on the insulating plate, a semiconductor chip formed on the conductive plate, a contact part arranged on the conductive plate with a bonding member therebetween, a rod-shaped external connection terminal having a lower end portion thereof fitted into the contact part, and a lid plate having a front surface and a back surface facing the substrate.
Makoto Isozaki
Filed: 23 Jun 20
Utility
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18 Apr 23
Provided is a semiconductor device including: a circuit board; a wiring pattern; a first semiconductor chip and a second semiconductor chip; a first lead frame; and a second lead frame; wherein the first lead frame and the second lead frame each comprises: a chip joining portion provided above at least a part of the semiconductor chip; a wiring joining portion provided above at least a part of the wiring pattern; and a bridging portion for connecting the chip joining portion and the wiring joining portion; and in the first direction, a space between the bridging portion of the first lead frame and the bridging portion of the second lead frame is smaller than a space between the chip joining portion of the first lead frame and the chip joining portion of the second lead frame.
Tomoya Nakayama, Akihiro Osawa
Filed: 28 Sep 20
Utility
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18 Apr 23
Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.
Yuichi Harada
Filed: 25 Oct 21
Utility
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18 Apr 23
There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.
Kosuke Yoshida
Filed: 1 Mar 22
Utility
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18 Apr 23
An electronic circuit having a first terminal and a second terminal.
Keiji Okumura
Filed: 30 Oct 20
Utility
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18 Apr 23
A method of manufacturing an insulated gate semiconductor device includes simultaneously forming a gate trench and a contact trench that respectively penetrate form a top of the electrode contact region through a main electrode contact region and a injection control region in a depth direction and respectively reach a charge transport region, the contact trench being disposed at a position laterally separated from the gate trench in a plan view; and embedding a gate electrode inside the gate trench with a gate insulating film interposed therebetween, thereby forming an insulated gate structure, and simultaneously embedding an injection suppression region inside the contact trench, the gate electrode and the injection suppression region being both made of a second semiconductor material having a narrower bandgap than a bandgap of the first semiconductor material of the charge transport region.
Akimasa Kinoshita
Filed: 28 Dec 20
Utility
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11 Apr 23
A resistance element includes a plurality of resistance chips stacked vertically, each of the plurality of resistance chips including a semiconductor substrate, one or more resistance layers on a field insulating film, a pad forming electrode on electrically connected to the one or more resistance layers, a relay wiring on the interlayer insulating film, laterally separated from the pad forming electrode, electrically connected to another end of at least one of the one or more resistance layers on one end and to a semiconductor substrate on another end, and a back surface electrode at a bottom of the semiconductor substrate, making ohmic contact with the semiconductor substrate, wherein the plurality of resistance chips have the same planar outer shape, and are stacked one over another so as to constitute a resistor as a whole.
Taichi Karino
Filed: 2 May 22
Utility
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11 Apr 23
A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.
Nobuhiro Higashi
Filed: 1 Apr 21
Utility
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11 Apr 23
A semiconductor device, including a circuit pattern, a contact part and an external connection terminal.
Rikihiro Maruyama, Seiichi Takahashi
Filed: 26 Mar 21
Utility
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11 Apr 23
A semiconductor device includes: a pad; a control circuit; a plurality of high-potential-side circuit regions having distances to the pad different from each other, each including a gate drive circuit, a SET-side level shifter, a RESET-side level shifter, and a circular wire; a SET-side wire electrically connects the pad with the SET-side level shifters; and a RESET-side wire electrically connects the pad with the RESET-side level shifters, wherein the circular wire located closer to the pad is electrically connected to the SET-side wire and the RESET-side wire via the circular wire 8u located further from the pad.
Akihiro Jonishi
Filed: 27 Dec 21
Utility
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11 Apr 23
A heat sink includes a base plate; a cover overlapping the base plate; fins, each having a plate-like shape projecting from the base plate in a direction perpendicular to the base plate, located between the base plate and the cover; one or a plurality of first fin groups composed of a plurality of the fins arranged with a gap therebetween in a first direction; and one or a plurality of second fin groups composed of a plurality of the fins arranged with a gap therebetween in the first direction, and adjacent to the first fin group with a gap therebetween in a second direction.
Takumi Nakamura, Eiji Anzai, Tomoyuki Hirayama, Yutaka Hirano, Ryoichi Kato, Hiromichi Gohara, Kohei Yamauchi
Filed: 29 Aug 22