997 patents
Page 3 of 50
Utility
Semiconductor device
5 Sep 23
Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected.
Seiji Momota, Hitoshi Abe, Takashi Shiigi, Takeshi Fujii, Koh Yoshikawa, Tetsutaro Imagawa, Masaki Koyama, Makoto Asai
Filed: 7 Jan 21
Utility
Integrated circuit
5 Sep 23
An integrated circuit having: a signal output circuit configured to output a first digital signal of a first logic level or of a second logic level in response to an analog signal; a first buffer circuit configured to raise and lower a voltage at a terminal of the integrated circuit in response to the first digital signal of a first logic level and a second logic level, respectively; a first digital delay circuit configured to receive a clock signal, and to delay the first digital signal, to output a resultant signal as a first delay signal, based on the received clock signal; and a second buffer circuit configured to raise the voltage at the terminal in response to the first delay signal of the first logic level, and lower the voltage at the terminal in response to the first delay signal of the second logic level.
Hiroyuki Nakajima
Filed: 27 Sep 22
Utility
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22 Aug 23
A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita, Misaki Meguro, Naoko Kodama, Yoshihiro Ikura, Seiji Noguchi, Yuichi Harada, Yosuke Sakurai
Filed: 18 May 22
Utility
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22 Aug 23
A semiconductor device, allowing easy hole extraction, including a semiconductor substrate having drift and base regions; and transistor and diode portions, in which trench portions and mesa portions are formed, is provided.
Tatsuya Naito
Filed: 14 Aug 22
Utility
tvoi0uzld6q2ijq9opbe5die46v4xl5cmoa6zpx90j0mxe3bdx7we102p
22 Aug 23
An integrated circuit for a power supply circuit that includes a transformer and a transistor.
Shinji Matsumoto, Hiroki Yamane
Filed: 24 Sep 21
Utility
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22 Aug 23
A power converter including a control circuit configured to output a control signal, and a semiconductor module.
Haruhiko Nishio
Filed: 22 Apr 21
Utility
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22 Aug 23
To provide a filter circuit and a semiconductor device capable of preventing circuit malfunction even when power supply voltage fluctuates.
Masashi Akahane
Filed: 22 Sep 21
Utility
9hv3v5czbho8fosfx46zuu6
15 Aug 23
A power conversion device which converts electrical power generated by a distributed energy resource into electrical power corresponding to a power system is provided, comprising a communication unit which periodically receives, via communication, reception information indicating whether an accident has occurred in the power system, a disconnection unit which disconnects the distributed energy resource from the power system when the communication unit receives the reception information indicating accident occurrence, and a control unit which starts an islanding determination process for determining whether the distributed energy resource is in an islanding state by detecting a change in AC characteristics in the power system, when the communication unit does not receive the reception information for a predetermined first period.
Takayuki Nagakura, Songhao Yin
Filed: 24 Jun 20
Utility
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15 Aug 23
A semiconductor device, including a substrate of a first conductivity type, an active region and a termination structure portion formed on a front surface of the substrate, and a plurality of regions of a second conductivity type formed concentrically surrounding the periphery of the active region in the termination structure portion.
Shoji Kitamura
Filed: 7 Oct 21
Utility
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15 Aug 23
Provided is a semiconductor module including: an insulating circuit board that includes an insulating board and a conductive circuit pattern provided on an upper surface of the insulating board; a semiconductor chip that is provided above the insulating circuit board; a solder portion that bonds the circuit pattern and the semiconductor chip; and one or more temperature gradient adjustment portions configured to be bonded to the insulating circuit board and have at least one surface disposed to face at least one surface of the solder portion.
Yoshinori Otomo
Filed: 28 Sep 21
Utility
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8 Aug 23
A circuit pattern, which is a second negative electrode wiring, and a horizontally extending area of a circuit pattern, which is a first negative electrode wiring, are connected electrically and mechanically by a vertically extending area of the circuit pattern and wires, which are an inter-negative-electrode wiring.
Masaki Takahashi, Kousuke Komatsu, Rikihiro Maruyama
Filed: 29 Oct 21
Utility
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8 Aug 23
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, first base regions of a second conductivity type, second base regions of the second conductivity type, a second semiconductor layer of the second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an interlayer insulating film, first electrodes, a second electrode, and trenches.
Yoshihito Ichikawa, Akimasa Kinoshita, Shingo Hayashi
Filed: 25 Jun 21
Utility
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1 Aug 23
Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen.
Yoshiharu Kato, Toru Ajiki, Tohru Shirakawa, Misaki Takahashi, Kaname Mitsuzuka, Takashi Yoshimura, Yuichi Onozawa, Hiroshi Takishita, Soichi Yoshida
Filed: 22 Oct 20
Utility
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25 Jul 23
A power supply device includes a controller configured to output, to a power converter, a command value to control at least one of a voltage or a current of power output from the power converter, and acquire a measurement value measured by a measurement unit.
Motohiro Tsukuta
Filed: 27 Jan 21
Utility
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25 Jul 23
Provided is a semiconductor device comprising a semiconductor substrate containing oxygen.
Tomoyuki Obata
Filed: 23 Mar 21
Utility
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25 Jul 23
Provided is a semiconductor device comprising: a semiconductor substrate; a gate trench section that is provided from an upper surface to an inside of the semiconductor substrate and extends in a predetermined extending direction on the upper surface of the semiconductor substrate; a mesa section in contact to the gate trench section in an arrangement direction orthogonal the extending direction; and an interlayer dielectric film provided above the semiconductor substrate; wherein the interlayer dielectric film is provided above at least a part of the gate trench section in the arrangement direction; a contact hole through which the mesa section is exposed is provided to the interlayer dielectric film; and a width of the contact hole in the arrangement direction is equal to or greater than a width of the mesa section in the arrangement direction.
Tatsuya Naito
Filed: 16 Jun 21
Utility
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18 Jul 23
A power conversion device includes a power converter, a relay, and a welding detector.
Hiroki Katsumata, Nobuhisa Ando, Shinichi Yokoyama
Filed: 31 Mar 21
Utility
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18 Jul 23
A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate.
Ryoichi Kato, Yoshinari Ikeda, Tatsuo Nishizawa, Eiji Mochizuki
Filed: 31 Dec 20
Utility
qx244f4yqav1jzjn0yaiab5bdbc2jlbh7a4ghrrf0m3jpmikv9j
18 Jul 23
In order to output sufficient reactive power for voltage stabilization of a utility grid, and calculate an appropriate consideration according to an amount of the output reactive power, is provided a control device for controlling a distributed power source connected to the utility grid, comprising: a range setting unit where an allowable range of reactive and active powers output at normal times is set; an output control unit for controlling the reactive and active powers supplied from the distributed power source to the utility grid within the allowable range set in the range setting unit; and a reception unit for receiving, from a command device in the utility grid, an excess output command indicating that the reactive power exceeding the allowable range should be output, wherein the output control unit is for outputting the reactive power out of the allowable range when the reception unit receives the excess output command.
Takayuki Nagakura, Songhao Yin
Filed: 30 Oct 20
Utility
8h3w25iqf3wqjgdju7isqxmee30ptloepcb778qzjfvd072fndz9b
18 Jul 23
An integrated circuit for a power supply circuit that includes a transformer and a transistor controlling an inductor current flowing through a primary winding of the transformer.
Hiroki Yamane
Filed: 23 Feb 21