997 patents
Page 8 of 50
Utility
Semiconductor device, semiconductor manufacturing apparatus and method of manufacturing semiconductor device having printed circuit board and insulating board with complementary warps
10 Jan 23
A semiconductor device includes: a first insulating circuit substrate; a first semiconductor chip mounted on a top surface of the first insulating circuit substrate; a printed circuit board arranged over the first insulating circuit substrate; a first external terminal inserted to the printed circuit board and having one end bonded to the top surface of the first insulating circuit substrate; and a first pin inserted to the printed circuit board and having one end bonded to a top surface of the first semiconductor chip, wherein the first insulating circuit substrate and the printed circuit board having warps complimentary to each other.
Yuhei Nishida
Filed: 10 Nov 20
Utility
Semiconductor device
10 Jan 23
A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate.
Bin Wan Mat Wan Azha
Filed: 27 Aug 20
Utility
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10 Jan 23
A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate.
Soichi Yoshida
Filed: 13 May 21
Utility
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10 Jan 23
There is provided a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity type provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a base region of a second conductivity type provided between the emitter region and the drift region inside the semiconductor substrate; a first accumulation region of the first conductivity type provided between the base region and the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a plurality of trench portions provided to pass through the emitter region, the base region and first accumulation region from an upper surface of the semiconductor substrate, and provided with a conductive portion inside; and a capacitance addition portion provided below the first accumulation region to add a gate-collector capacitance thereto.
Tatsuya Naito
Filed: 18 Nov 20
Utility
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3 Jan 23
There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.
Kazumi Takagiwa
Filed: 29 Jun 20
Utility
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3 Jan 23
A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate.
Ryoichi Kato, Yoshinari Ikeda, Tatsuo Nishizawa, Motohito Hori, Eiji Mochizuki
Filed: 5 Jan 21
Utility
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3 Jan 23
A semiconductor device includes a semiconductor element having a surface electrode layer; a first wire that is electrically connected to the first main surface of the surface electrode layer at a plurality of first connecting portions and is arranged in a first direction on the first main surface; and a second wire that is electrically connected to the first main surface of the surface electrode layer at a second connecting portion and is arranged in a second direction on the first main surface, wherein a second circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the second wire, is larger than a first circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the first wire.
Takeyoshi Nishimura
Filed: 1 Dec 20
Utility
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27 Dec 22
A semiconductor module including a cooling apparatus and a semiconductor device mounted on the cooling apparatus is provided.
Nobuhide Arai
Filed: 11 May 21
Utility
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27 Dec 22
A silicon carbide semiconductor device, including a semiconductor substrate, and a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions and a plurality of fourth semiconductor regions formed in the semiconductor substrate.
Naoki Kumagai
Filed: 27 Jan 21
Utility
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27 Dec 22
An uninterruptible power supply system includes a plurality of uninterruptible power supplies, each of which includes a rectifier and an inverter and switches between a normal operation mode for normal operation and a load simulation mode for simulating a load.
Tatsuki Ohno, Kazuyoshi Umezawa, Masao Takeuchi
Filed: 7 Jun 21
Utility
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27 Dec 22
A switching control circuit for controlling a power supply circuit that generates an output voltage from an alternating current (AC) voltage inputted thereto.
Yuta Endo
Filed: 22 Apr 21
Utility
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27 Dec 22
An integrated circuit includes a signal output circuit configured to output a timing signal indicating first and second timings of respectively switching first and second switching devices, first and second hold circuits respectively configured to receive first and second voltages corresponding to temperatures of the first and second switching devices, hold the first and second voltages for first and second time periods, and output the received first and second voltages in response to the first and second time periods having elapsed, and first and second control circuits respectively configured to control switching of the first and second switching devices with first and second driving capabilities corresponding to the temperatures of the first and second switching devices, based on the first and second voltages outputted from the first and second hold circuits and first and second driving signals for driving the first and second switching device.
Isao Kakebe
Filed: 22 Apr 22
Utility
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20 Dec 22
An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module.
Robert D. Lorenz, Minhao Sheng, Hiroyuki Nogawa, Yoshinari Ikeda, Eiji Mochizuki
Filed: 9 Aug 21
Utility
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20 Dec 22
A semiconductor device is provided, wherein a semiconductor substrate includes: a first trench portion provided from a front surface of the semiconductor substrate to a predetermined depth, and having a longer portion and a shorter portion as seen from above; and a first conductivity-type floating semiconductor region at least partially exposed on the front surface and surrounded by the first trench portion, an interlayer insulating film has openings to electrically connect an emitter electrode and the floating semiconductor region, the openings include: a first opening closest to an outer end of the floating semiconductor region in a direction parallel to the longer portion; and a second opening second closest to the outer end in the direction parallel to the longer portion, and a distance between the first opening and the second opening is shorter than a distance between any adjacent two of the openings other than the first opening.
Yoshiharu Kato, Hidenori Takahashi, Tatsuya Naito
Filed: 1 Mar 18
Utility
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20 Dec 22
Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate.
Kouta Yokoyama, Toru Ajiki, Kaname Mitsuzuka, Tohru Shirakawa
Filed: 24 Jun 20
Utility
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13 Dec 22
An SBD of a JBS structure has on a front side of a semiconductor substrate, nickel silicide films in ohmic contact with p-type regions and a FLR, and a titanium film forming a Schottky junction with an n−-type drift region.
Naoyuki Ohse
Filed: 19 Apr 21
Utility
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13 Dec 22
A semiconductor device includes a semiconductor substrate, an emitter region, a base region and multiple accumulation areas, and an upper accumulation area in the multiple accumulation areas is in direct contact with a gate trench section and a dummy trench section, in an arrangement direction that is orthogonal to a depth direction and an extending direction, a lower accumulation area furthest from the upper surface of the semiconductor substrate in the multiple accumulation areas has: a gate vicinity area closer to the gate trench section than the dummy trench section in the arrangement direction; and a dummy vicinity area closer to the dummy trench section than the gate trench section in the arrangement direction, and having a doping concentration of the first conductivity type lower than that of the gate vicinity area.
Tatsuya Naito
Filed: 1 Nov 20
Utility
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13 Dec 22
A semiconductor device having, in a plan view thereof, an active region and a termination region that surrounds a periphery of the active region.
Yasuyuki Hoshi
Filed: 30 Dec 20
Utility
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6 Dec 22
A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate.
Akira Hirao, Yoshinari Ikeda, Motohito Hori
Filed: 23 Oct 20
Utility
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6 Dec 22
A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.
Shuangching Chen, Sayaka Yamamoto
Filed: 30 Mar 20