997 patents
Page 12 of 50
Utility
Semiconductor device and method of manufacturing semiconductor device
23 Aug 22
A semiconductor device is provided, including: a semiconductor substrate having a first conductivity type of drift region; a transistor section having a gate trench section on an upper surface of the semiconductor substrate; a diode section having a first conductivity type of cathode region on a lower surface of the semiconductor substrate, the cathode region having a higher doping concentration than the drift region; and a buffering region arranged between the transistor section and the diode section, the diode section having a first upper surface side lifetime control region where a first valley portion is provided in a carrier lifetime distribution in a depth direction of the semiconductor substrate, and the buffering region having a second upper surface side lifetime control region where a second valley portion is provided in the carrier lifetime distribution, the second valley portion being wider, in the depth direction, than the first valley portion.
Soichi Yoshida
Filed: 26 Mar 20
Utility
Semiconductor device
23 Aug 22
A semiconductor device, including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided on the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a plurality of first semiconductor regions of the first conductivity type, selectively provided in the second semiconductor layer at a surface thereof, a plurality of gate insulating films in contact with the second semiconductor layer, a plurality of gate electrodes respectively provided on the gate insulating films, a plurality of first electrodes provided on the second semiconductor layer and the first semiconductor regions, and a second electrode provided on a back surface of the semiconductor substrate.
Akimasa Kinoshita
Filed: 27 Jan 21
Utility
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23 Aug 22
A conventional technique makes a configuration complicated.
Qichen Wang, Nobuyuki Tawada
Filed: 30 Sep 19
Utility
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16 Aug 22
If the bridge circuit fails due to damage of the diaphragm, the damage is detected at an early stage.
Kazuhiro Matsunami
Filed: 27 Sep 20
Utility
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16 Aug 22
A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode.
Motohito Hori, Yoshinari Ikeda
Filed: 25 Sep 20
Utility
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16 Aug 22
An integrated circuit for a power supply circuit that generates an output voltage from an input voltage and includes an inductor and a transistor, the integrated circuit configured to switch the transistor to control a current of the inductor.
YoshinorI Kobayashi, Takato Sugawara
Filed: 24 May 21
Utility
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9 Aug 22
A portion of a source electrode exposed by an opening in a passivation film is used as a portion of a source pad.
Keiji Okumura
Filed: 27 Jan 20
Utility
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9 Aug 22
A semiconductor module includes a multilayer substrate having an insulating plate on which first to third conductive layers respectively connected to positive, negative and output electrode terminals are arranged in a first direction, a plurality of first semiconductor elements each having top and bottom electrodes on the first conductive layer and arranged in a second direction orthogonal to the first direction, a plurality of second semiconductor elements each having top and bottom electrodes on the second conductive layer and arranged in the second direction, first and second main wiring members each connecting the top electrode of each first and second semiconductor element to the second and third conductive layers.
Tadahiko Sato
Filed: 30 Mar 21
Utility
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9 Aug 22
A semiconductor element encompasses a first external electrode on an upper surface side of a semiconductor chip, a second external electrode, spaced apart from the first external electrode, provided in parallel with the first external electrode; and a protective film covering the first and second external electrodes, having first and second windows to expose portions of upper surfaces of the first and second external electrodes, respectively.
Taichi Karino
Filed: 22 Oct 19
Utility
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9 Aug 22
A state output circuit that outputs a state signal indicating a state of a power supply apparatus, including: a state output terminal that outputs the state signal; a reference potential line to which a reference potential is applied; a first pull-up terminal to which a first pull-up potential is applied, wherein the first pull-up potential is a potential higher than the reference potential; a connection switch unit that is provided between the state output terminal and the reference potential line, and switches whether to connect the state output terminal to the reference potential line or not, in accordance with the state of the power supply apparatus; a first protection resistor provided between the connection switch unit and the state output terminal; and a pull-up unit that pulls up a first connection line between the first protection resistor and the connection switch unit up to the first pull-up potential.
Sho Nakagawa
Filed: 25 Aug 20
Utility
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9 Aug 22
A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case.
Ryoichi Kato, Yoshinari Ikeda, Yuma Murata
Filed: 30 Nov 20
Utility
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9 Aug 22
A semiconductor module includes semiconductor elements, a case that houses the semiconductor elements, an external terminal electrically connecting the semiconductor elements and an external conductor, and a nut into which a bolt that secures the external conductor and the external terminal is threaded.
Satoshi Kaneko, Hisato Inokuchi
Filed: 30 Mar 21
Utility
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9 Aug 22
In a method of manufacturing a silicon carbide semiconductor device that is a silicon carbide diode having a JBS structure including a mixture of a Schottky junction and a pn junction and that maintains low forward voltage through a SBD structure and enhances surge current capability, nickel silicide films are formed in an oxide film by self-alignment by causing a semiconductor substrate and a metal material film to react with one another through two sessions of heat treatment including a low-temperature heat treatment and a high-temperature heat treatment, the metal material film including sequentially a first nickel film, an aluminum film, and a second nickel film, the first nickel film being in contact with an entire area of a connecting region of a FLR and p-type regions respectively exposed in openings of the oxide film.
Takahito Kojima, Naoyuki Ohse
Filed: 30 Nov 20
Utility
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9 Aug 22
Takuma Shimoichi
Filed: 11 Jun 20
Utility
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9 Aug 22
A semiconductor device includes an active region through which a main current passes during an ON state.
Akimasa Kinoshita
Filed: 29 Jan 21
Utility
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9 Aug 22
A controller of a current resonance switching power supply apparatus configured to supply a constant output voltage to a load.
Koji Sonobe
Filed: 27 Jul 20
Utility
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9 Aug 22
A power supply circuit includes an inductor, a power transistor configured to control an inductor current flowing through the inductor, and an integrated circuit driving the power transistor.
Hiroshi Maruyama, Takato Sugawara
Filed: 24 May 21
Utility
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2 Aug 22
A semiconductor device includes a MOS structure part and first to third temperature sensing portions.
Yasuyuki Hoshi
Filed: 31 May 20
Utility
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2 Aug 22
A semiconductor device including a transistor section and a diode section, the semiconductor device having: a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section; and a first non-neighboring diode section that is not adjacent to the temperature sensing section, wherein the first non-neighboring diode section has a pattern different from the pattern of the neighboring diode section in the top view is provided.
Masahiro Taoka
Filed: 3 Dec 18
Utility
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2 Aug 22
A semiconductor device includes an active region, a gate ring region surrounding a periphery of the active region, and a source ring region surrounding a periphery of the gate ring region.
Yasuyuki Hoshi
Filed: 3 Aug 20