997 patents
Page 14 of 50
Utility
Semiconductor device with an expanded doping concentration distribution in an accumulation region
31 May 22
A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, and a lower gradient portion in which the concentration decreases from the maximum portion to a drift region.
Tatsuya Naito
Filed: 7 Jan 20
Utility
Semiconductor device
31 May 22
A semiconductor device includes an insulating circuit substrate including an insulating plate, a first metal layer formed on a top surface of the insulating plate, and a second metal layer formed on a bottom surface of the insulating plate, a heatsink on whose top surface the insulating circuit substrate is disposed; semiconductor elements disposed on the top surface of the first metal layer through a bonding material, and a case that encloses a perimeter of the insulating circuit substrate and the semiconductor elements.
Naoki Takizawa
Filed: 30 Nov 20
Utility
Semiconductor device and manufacturing method thereof
24 May 22
A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.
Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita, Misaki Meguro, Naoko Kodama, Yoshihiro Ikura, Seiji Noguchi, Yuichi Harada, Yosuke Sakurai
Filed: 28 Sep 20
Utility
Semiconductor device
24 May 22
A semiconductor device is provided, including: a semiconductor substrate; a first-conductivity-type drift region provided in the semiconductor substrate; a gate trench portion extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate; a mesa portion provided in contact with the gate trench portion in an array direction orthogonal to the extending direction; a first-conductivity-type accumulation region provided above the drift region and in contact with the gate trench portion, and having a higher doping concentration than the drift region; a second-conductivity-type base region provided above the accumulation region and in contact with the gate trench portion; and a second-conductivity-type floating region provided below the accumulation region and in contact with the gate trench portion, and provided in a part of the mesa portion in the array direction.
Tatsuya Naito
Filed: 18 Nov 20
Utility
Alarm signal generator circuit and alarm signal generation method
17 May 22
With regard to an instrument wherein a plurality of phase operations are carried out, the type of failure or the phase in which the failure has occurred is determined and, in accordance with the result of the determination, an alarm signal is generated.
Takahiro Mori, Akira Nakamori
Filed: 11 Jul 14
Utility
Semiconductor device test method
17 May 22
A method for testing a semiconductor chip that has a pn junction constituting a parasitic diode therein includes: causing probe terminals to be in contact with front surface electrodes of the semiconductor chip; obtaining a temperature of the semiconductor chip by measuring electrical characteristics of the parasitic diode through at least one of the front surface electrodes and a back surface electrode and by referring to prescribed temperature characteristics of the parasitic diode; if the obtained temperature is not within a prescribed tolerance from the predetermined target temperature, heating up the semiconductor chip by applying voltage between one or more of the front surface electrodes and the back surface electrode; and once the obtained temperature increases and reaches the predetermined target temperature within the prescribed tolerance, testing electrical characteristics of the semiconductor chip through the front surface electrodes and the back surface electrode.
Mitsuru Yoshida
Filed: 4 Jan 21
Utility
Semiconductor module
17 May 22
A semiconductor module includes a first semiconductor element and a second semiconductor element each having an upper-surface electrode and a lower-surface electrode, and being connected in parallel to configure an upper arm, a first conductive layer having a U-shape in planar view, having two end portions, and having an upper surface on which the first semiconductor element and the second semiconductor element are disposed in a mirror image arrangement, a positive electrode terminal having a body part and at least two positive electrode ends branched from the body part, and a negative electrode terminal having a negative electrode end disposed between the positive electrode ends.
Ryoichi Kato, Yuma Murata, Naoyuki Kanai, Akito Nakagome, Yoshinari Ikeda
Filed: 25 Feb 21
Utility
Integrated circuit and power supply circuit
17 May 22
A power supply circuit configured to generate an output voltage from a predetermined AC voltage.
Hiroki Yamane
Filed: 25 Nov 20
Utility
Semiconductor device and method of manufacturing semiconductor device
17 May 22
Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.
Takahiro Tamura, Yuichi Onozawa, Takashi Yoshimura, Hiroshi Takishita, Akio Yamano
Filed: 19 Aug 20
Utility
Reverse-conducting IGBT and manufacturing method thereof
17 May 22
To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion.
Kaname Mitsuzuka, Misaki Takahashi, Tohru Shirakawa
Filed: 24 Nov 19
Utility
Frequency setting in a power supply device, power supply control device, and power supply control method
17 May 22
Provided is a power supply device comprising a voltage conversion portion configured to convert input voltage to output voltage by pulse width modulation, a frequency reduction circuit configured to reduce a frequency of the pulse width modulation in response to detection of an overload during normal operation of the voltage conversion portion and startup of the voltage conversion portion, and a frequency setting circuit configured to set the frequency of the pulse width modulation used when starting up the voltage conversion portion to a frequency higher than a minimum frequency corresponding to the overload.
Hiroshi Maruyama
Filed: 24 Feb 20
Utility
Semiconductor device
17 May 22
A semiconductor device including an insulated circuit board.
Kenshi Kai, Rikihiro Maruyama
Filed: 28 Dec 20
Utility
Driver circuit and semiconductor device
10 May 22
A driver circuit controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line.
Morio Iwamizu
Filed: 28 Jul 20
Utility
Driving apparatus and switching apparatus
10 May 22
A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.
Kunio Matsubara, Hirotoshi Kaneda
Filed: 21 Feb 21
Utility
Insulated-gate semiconductor device and method of manufacturing the same
10 May 22
An insulated-gate semiconductor device includes: an n+-type current spreading layer disposed on an n−-type drift layer; a p-type base region disposed on the current spreading layer; a n+-type main-electrode region arranged in an upper portion of the base region; an insulated-gate electrode structure provided in a trench; and a p+-type gate-bottom protection-region being in contact with a bottom of the trench, including a plurality of openings through which a part of the current spreading layer penetrates, being selectively buried in the current spreading layer, wherein positions of the openings cut on both sides of a central line of the trench are shifted from each other about the central line in a longitudinal direction of the trench in a planar pattern.
Akimasa Kinoshita, Yasuhiko Oonishi, Keiji Okumura
Filed: 26 Sep 18
Utility
Gate drive apparatus, switching apparatus, and gate drive method
10 May 22
A gate drive apparatus is provided.
Tsuyoshi Nagano, Kunio Matsubara
Filed: 24 Nov 20
Utility
Switching controller with adaptive overheating protection
10 May 22
A semiconductor device includes a power semiconductor switch; a logic circuit connected to an input terminal; an overheat detection circuit that outputs to the logic circuit an overheat detection signal when a temperature of the power semiconductor switch exceeds an overheat detection threshold; and an overcurrent detection circuit that monitors a current that flows through the power semiconductor switch and that outputs to the logic circuit and to the overheat detection circuit an overcurrent detection signal when the current that flows through the power semiconductor switch exceeds a prescribed threshold, wherein in the overheat detection circuit, the overheat detection threshold values is changed from a first threshold value to a second threshold value that is lower than the first threshold value when the overheat detection circuit receives the overcurrent detection signal from the overcurrent detection circuit.
Sho Nakagawa, Morio Iwamizu
Filed: 1 May 20
Utility
Semiconductor module and method of manufacturing the same
3 May 22
A semiconductor module includes: a first metal plate including a first mount part joined with a bottom-surface electrode of a first switching element, a second mount part joined with a positive-electrode terminal, and a first narrow part between the first and second mount parts and being narrower than a part jointing the first switching element to the first mount part and the positive-electrode terminal; a second metal plate being joined with a bottom-surface electrode of a second switching element, and connected to a top-surface electrode of the first switching element; a third metal plate including a sixth mount part joined with a negative-electrode terminal, a seventh mount part connected to a top-surface electrode of the second switching element, and being narrower than the negative-electrode terminal, and a second narrow part between the sixth and seventh mount parts; and a snubber circuit connecting the first and second narrow parts.
Hayato Nakano
Filed: 28 Sep 20
Utility
Semiconductor device
3 May 22
A semiconductor device, including a parallel pn layer formed on a semiconductor substrate, and an insulated gate structure provided on the parallel pn layer.
Takeyoshi Nishimura
Filed: 3 Aug 20
Utility
Semiconductor device
3 May 22
A semiconductor device has an active region through which current flows and a termination structure region.
Ryo Maeta
Filed: 20 Nov 20