997 patents
Page 15 of 50
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
3 May 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first silicon carbide semiconductor layer of the first conductivity type, a second silicon carbide semiconductor layer of a second conductivity type, a first silicon carbide semiconductor region of the first conductivity type, a trench, and a gate electrode on a gate insulating film.
Makoto Utsumi, Tsuyoshi Araoka
Filed: 25 Mar 20
Utility
Semiconductor device
3 May 22
A semiconductor device is provided, which includes: a semiconductor substrate; an emitter electrode including at least two partial electrodes arranged with an interval in a top plan view of the semiconductor substrate; and an active-side gate runner and an active-side dummy runner arranged to be sandwiched between two of the partial electrodes, wherein the semiconductor substrate includes: a gate trench portion connected to the active-side gate runner and having a longitudinal length in a first direction in the top plan view, and a dummy trench portion connected to the active-side dummy runner and having a longitudinal length in the first direction, wherein the entirety of one of the active-side gate runner and the active-side dummy runner in the first direction is covered by the other of the gate runner and the dummy runner.
Soichi Yoshida, Kenichiro Sato
Filed: 24 Feb 21
Utility
Terminal device, communication system, and communication method of terminal device for integrating and transmitting data
26 Apr 22
A terminal device that is connected via a cable to a port of a switching device and performs data communication with a master device includes: a plurality of controllers configured to control, in accordance with a control command transmitted from the master device, a plurality of objects to be controlled; and a data transmitter configured to integrate data, transmitted from the plurality of respective controllers, in a transmission format for transmitting data to the master device to transmit the integrated data to the switching device.
Fumihiko Anzai
Filed: 29 Nov 19
Utility
External connection part of semiconductor module, semiconductor module, external connection terminal, and manufacturing method of external connection terminal of semiconductor module
26 Apr 22
An external connection terminal of a semiconductor module is provided.
Hayato Nakano
Filed: 7 Jan 20
Utility
Semiconductor device and method of manufacturing semiconductor device
26 Apr 22
A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate.
Ryoichi Kato, Hiromichi Gohara, Yoshinari Ikeda, Yoshikazu Takahashi, Kuniteru Mihara, Isao Takahashi
Filed: 19 Aug 20
Utility
Nitride semiconductor device
26 Apr 22
A nitride semiconductor device includes a nitride semiconductor layer, channel cells in the nitride semiconductor layer, a source lead region of a second conductivity type in the nitride semiconductor layer, and a source electrode on a side where a first main surface of the nitride semiconductor layer is located.
Katsunori Ueno
Filed: 29 Jan 20
Utility
Apparatus comprising a differential amplifier
26 Apr 22
To make it possible to use a transistor with relatively low gate withstand voltage at an output stage in an apparatus including a differential amplifier.
Tetsuya Kawashima
Filed: 28 Jun 19
Utility
Semiconductor module
19 Apr 22
A semiconductor module includes a case with a side wall in a first direction in which gate and source terminals are embodied and exposed therefrom, first and second semiconductor elements each having gate and source electrodes, gate and source relay layers positioned at a center between the first and second semiconductor elements in the first direction at a side of the semiconductor elements farther from the side wall, first gate and source wires respectively connecting the gate and source terminals to the gate and source relay layers, second gate and source wires, and third gate and source wires, respectively connecting the gate and source electrodes of the first semiconductor element, and the gate and source electrode of the second semiconductor element, to the gate and source relay layers.
Yuma Murata, Ryoichi Kato, Naoyuki Kanai, Akito Nakagome, Yoshinari Ikeda
Filed: 25 Feb 21
Utility
Semiconductor drive device and power conversion apparatus
19 Apr 22
First and second current detection resistors connected in series are used as current detection resistors for detecting a main current of a switching element.
Toshimitsu Morimoto
Filed: 24 Nov 20
Utility
Drive circuit
19 Apr 22
A drive circuit having a set-side level shift circuit and a reset-side level shift circuit each configured to shift a level of a set or reset signal, and output the level-shifted set or reset signal from a set-side or reset-side output node, a mask-signal generating circuit configured to output a mask signal in response to a change in a voltage at the set-side or reset-side output node, and a control circuit configured to output a drive signal to a power device.
Masashi Akahane
Filed: 25 Feb 21
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
19 Apr 22
A semiconductor device having, in a plan view, a termination region surrounding an active region.
Naoyuki Ohse, Takahito Kojima, Yuichi Hashizume, Takafumi Uchida
Filed: 1 Dec 20
Utility
Semiconductor module
19 Apr 22
A semiconductor module, including a semiconductor chip that includes a switching device having a control electrode, and a control terminal connected to the control electrode, a first resistance being formed between the control electrode and the control terminal and having a positive temperature coefficient, and a second resistance connected to the control terminal, the second resistance having a negative temperature coefficient.
Susumu Iwamoto
Filed: 24 Jun 21
Utility
Control device, control method, and non-transitory recording medium
5 Apr 22
There is provision of a control device for outputting an operation amount of a controlled object so as to cause a process value of the controlled object to track a target value.
Yoshio Tange, Satoshi Kiryu
Filed: 28 Oct 19
Utility
Semiconductor device manufacturing method and semiconductor device
5 Apr 22
A method of manufacturing a semiconductor device prepares contact members, each of which has a cylindrical through-hole, and column-shaped connection terminals, each having a polygonal shape in a cross-sectional view along a length direction thereof, wherein a length of a diagonal of the polygonal shape is greater than an inner diameter of the through-holes.
Rikihiro Maruyama, Masaoki Miyakoshi
Filed: 26 May 20
Utility
Semiconductor device
5 Apr 22
A semiconductor device includes an active region configured by a first MOS structure region and a second MOS structure region, a gate ring region surrounding a periphery of the active region, a first ring region surrounding a periphery of the gate ring region, a second ring region surrounding a periphery of the first ring region, and a termination region surrounding a periphery of the second ring region.
Yasuyuki Hoshi
Filed: 30 Nov 20
Utility
Uninterruptible power supply and disconnection module
5 Apr 22
An uninterruptible power supply includes disconnectors that perform a disconnection operation to electrically disconnect a plurality of uninterruptible power supply modules individually.
Keita Koshii, Seiitsu Kin, Tomo Kurozaki
Filed: 24 Aug 20
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
5 Apr 22
A silicon carbide semiconductor device includes, sequentially, a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a fourth semiconductor layer of a second conductivity type provided on the third semiconductor layer.
Takeshi Tawara, Mina Ohse
Filed: 23 Oct 19
Utility
Semiconductor unit, semiconductor module, and semiconductor device
29 Mar 22
A semiconductor unit includes transistor chips; first main circuit terminals that are electrically connected to first main electrodes of the transistor chips; second main circuit terminals that are electrically connected to second main electrodes of the transistor chips; and a sealing body that has two sides and positioned on opposite sides from one another in one direction and that seals the transistor chip and the first and second main circuit terminals except for a portion of each of the first and second main circuit terminals.
Masashi Hoya
Filed: 4 Feb 20
Utility
Uninterruptible power supply
29 Mar 22
In an uninterruptible power supply, a signal generator generates a semiconductor switch drive signal for driving a semiconductor switch and continuously generates the semiconductor switch drive signal while AC power is being supplied via a bypass circuit.
Shota Oki, Takuya Kimizu
Filed: 24 Jun 20
Utility
Semiconductor device
22 Mar 22
A semiconductor device that includes a SiC semiconductor substrate; a SiC epitaxial layer having an impurity concentration lower than that of the SiC semiconductor substrate; a first semiconductor layer including first semiconductor pillars and second semiconductor pillars; a second semiconductor layer; a device active region; a termination region; a channel stopper region having an impurity concentration higher than that of the SiC epitaxial layer; and a plurality of first chip end portions and a plurality of second chip end portions, and a surface of the first side surface is covered with an impurity region having an impurity concentration higher than those of the first semiconductor pillar and the SiC epitaxial layer and is connected to the channel stopper region.
Ryoji Kosugi, Kazuhiro Mochizuki, Kohei Adachi, Manabu Takei, Yoshiyuki Yonezawa
Filed: 15 Feb 19