997 patents
Page 17 of 50
Utility
Semiconductor device for improving transistor characteristics during turn-on
1 Mar 22
Provided is a semiconductor device including a semiconductor substrate provided with a transistor portion, wherein the semiconductor substrate includes, in the transistor portion, a drift region of a first conductivity type; an accumulation region of the first conductivity type that has a higher doping concentration than the drift region; a collector region of a second conductivity type; and a plurality of gate trench portions and a plurality of dummy trench portions that are provided extending in a predetermined extension direction in the top surface of the semiconductor substrate, and are arranged in an arrangement direction orthogonal to the extension direction, and the transistor portion includes a first region that includes a gate trench portion; and a second region in which the number of dummy trench portions arranged in a unit length in the arrangement direction is greater than in the first region.
Daisuke Ozaki, Akinori Kanetake, Tohru Shirakawa, Yosuke Sakurai
Filed: 28 Jul 20
Utility
Resistor element
1 Mar 22
A resistor element encompasses a first resistive layer, a first protection strip implemented by a tandem connection of p-n junctions, an interlayer insulating film covering the first resistive layer and the first protection strip, a first external electrode on the interlayer insulating film, being connected to a terminal of the first resistive layer and a terminal of the first protection strip, and a second external electrode on the interlayer insulating film, being connected to another terminal of the first resistive layer and another terminal of the first protection strip.
Taichi Karino
Filed: 22 Oct 19
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
1 Mar 22
A silicon carbide semiconductor device, including a semiconductor substrate having first and second semiconductor regions and a plurality of third semiconductor regions sequentially formed therein, a plurality of trenches penetrating the second and third semiconductor regions, a plurality of gate electrodes provided in the trenches via a gate insulating film, an interlayer insulating film covering the gate electrodes, a plurality of contact holes penetrating the interlayer insulating film, a first electrode provided in the contact holes and at the surface of the interlayer insulating film, and a second electrode electrically connected to the first semiconductor region.
Setsuko Wakimoto
Filed: 24 Aug 20
Utility
Semiconductor device using regions between pads
1 Mar 22
A semiconductor device includes pads arrayed between a region where a transistor portion or a diode portion is disposed and a first end side on an upper surface of a semiconductor substrate, and a gate runner portion that transfers a gate voltage to the transistor portion.
Tetsutaro Imagawa
Filed: 19 Feb 20
Utility
Method of determining whether a silicon-carbide semiconductor device is a conforming product
1 Mar 22
A method of determining whether a silicon-carbide semiconductor device, which has a metal oxide semiconductor (MOS) gate structure and a built-in diode, is a conforming product.
Masaki Miyazato
Filed: 2 Mar 20
Utility
Semiconductor device including transistor portion and diode portion
22 Feb 22
Provided is a semiconductor device, wherein: in a semiconductor substrate, a lifetime control region is provided from at least a part of a transistor portion to a diode portion; the transistor portion includes a main region, a boundary region located between the main region and the diode portion and overlapped with the lifetime control region, and a plurality of gate trench portions; the plurality of gate trench portions include a first gate trench portion provided in the main region and a second gate trench portion provided in the boundary region; and a gate resistance component of the first gate trench portion is different from a gate resistance component of the second gate trench portion.
Motoyoshi Kubouchi
Filed: 25 Aug 20
Utility
Semiconductor device
22 Feb 22
A semiconductor device, including a substrate of a first conductivity type, an active region and a termination structure portion formed on a front surface of the substrate, and a plurality of regions of a second conductivity type formed concentrically surrounding the periphery of the active region in the termination structure portion.
Shoji Kitamura
Filed: 30 Aug 16
Utility
Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device
22 Feb 22
A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.
Hideaki Matsuyama, Shinya Takashima, Katsunori Ueno, Ryo Tanaka, Masaharu Edo, Daisuke Mori, Hirotaka Suda, Hideaki Teranishi, Chizuru Inoue
Filed: 28 Jun 18
Utility
Semiconductor integrated circuit
22 Feb 22
A semiconductor integrated circuit includes: a p−-type semiconductor substrate defining a high-potential side circuit area and a low-potential side circuit area separated from each other; a high-side n well provided in an upper part of the semiconductor substrate in the high-potential side circuit area; a high-side p well provided in the high-side n well; and a p-type semiconductor region provided in an upper part of the semiconductor substrate in the low-potential side circuit area; and n+-type semiconductor region provided to be brought contact with the p-type semiconductor region, wherein a whole n-type semiconductor region including the n+-type semiconductor region, has an impurity concentration higher than an impurity concentration of the high-side n well.
Takahide Tanaka
Filed: 6 Aug 20
Utility
Semiconductor device and method of manufacturing semiconductor device
22 Feb 22
A semiconductor device, including a first semiconductor layer of the first conductivity type formed on a semiconductor substrate, a first semiconductor region of the first conductivity type, a first base region of a second conductivity type and a first base region of a second conductivity type that are respectively selectively provided in the first semiconductor layer, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer, a second semiconductor region of the first conductivity type selectively provided in the second semiconductor layer, a trench that penetrates the second semiconductor layer and the second semiconductor region, a gate electrode provided in the trench via a gate insulating film, an interlayer insulating film provided on the gate electrode, a first electrode in contact with the second semiconductor layer and the second semiconductor region, and a second electrode provided on a back surface of the semiconductor substrate.
Keiji Okumura
Filed: 24 Dec 19
Utility
Semiconductor device
22 Feb 22
A semiconductor device includes a semiconductor substrate having a drift region, and an edge terminal structure portion provided between the active region and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate.
Motoyoshi Kubouchi, Soichi Yoshida
Filed: 8 Jun 20
Utility
Silicon carbide semiconductor device
15 Feb 22
A silicon carbide semiconductor device includes first semiconductor areas and second semiconductor areas.
Shinichiro Matsunaga
Filed: 18 Nov 20
Utility
Semiconductor module mounted on a cooling device for use in a vehicle
15 Feb 22
A semiconductor module includes a semiconductor device, and a cooling device.
Nobuhide Arai
Filed: 30 Sep 19
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
15 Feb 22
A semiconductor device having a semiconductor substrate that includes first to third epitaxial layers provided sequentially on a starting substrate, the third epitaxial layer forming a pn junction with the second epitaxial layer, and including a plurality of first semiconductor regions formed on a second semiconductor region.
Takumi Fujimoto
Filed: 30 Sep 20
Utility
Semiconductor device
15 Feb 22
A main ceramic circuit board on which a semiconductor element is arranged is separate from a sub-ceramic circuit board on which a connection terminal is arranged.
Taichi Itoh
Filed: 25 Feb 20
Utility
Semiconductor device having circuit board interposed between two conductor layers
15 Feb 22
A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer.
Motohito Hori, Yoshinari Ikeda, Akira Hirao
Filed: 29 Oct 20
Utility
Semiconductor device
8 Feb 22
A semiconductor device includes a semiconductor element, a bonding wire that is electrically connected to the semiconductor element, a connection terminal, and sealing material that seals the semiconductor element, the bonding wire, and a part of the connection terminal.
Yoshihiro Yasuda, Kenpei Nakamura
Filed: 24 Feb 20
Utility
Semiconductor device and method of manufacturing semiconductor device
8 Feb 22
A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer.
Kosuke Yoshida, Haruo Nakazawa, Kenichi Iguchi, Koh Yoshikawa, Motoyoshi Kubouchi
Filed: 3 Sep 20
Utility
Silicon carbide semiconductor device having a step film formed between a plating film and a first electrode
8 Feb 22
A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor substrate of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; and a gate electrode having a striped-shape and provided on a gate insulating film.
Yuichi Hashizume, Keishirou Kumada, Yasuyuki Hoshi
Filed: 31 Jul 18
Utility
Semiconductor device
8 Feb 22
A region of a portion directly beneath an OC pad is a sensing effective region in which unit cells of a current sensing portion are disposed.
Yasuyuki Hoshi
Filed: 31 Mar 20