997 patents
Page 18 of 50
Utility
Integrated circuit and power supply circuit
8 Feb 22
An integrated circuit for a power supply circuit that generates an output voltage at a target level from an AC voltage input thereto.
Yuta Endo
Filed: 25 Sep 20
Utility
Semiconductor device
1 Feb 22
A semiconductor device is provided, including: a semiconductor substrate; an active section in which current flows between upper and lower surfaces of the semiconductor substrate; a transistor section provided in the active section; a gate metal layer to supply a gate voltage to the transistor section; a gate pad electrically connected to the gate metal layer; a temperature-sensing unit provided above the active section; a temperature-measurement pad arranged in a peripheral region between the active section and an outermost perimeter of the semiconductor substrate; and a temperature-sensing wire having a longitudinal portion and connecting the temperature-sensing unit and the temperature-measurement pad, wherein on the upper surface of the semiconductor substrate, the gate pad is arranged in a region other than an extending region that is an extension of the longitudinal portion of the temperature-sensing wire to the outermost perimeter of the semiconductor substrate in the longitudinal direction.
Tatsuya Naito
Filed: 30 Sep 19
Utility
Semiconductor device
1 Feb 22
Provided is a semiconductor device having transistor and diode sections.
Tomoyuki Obata, Soichi Yoshida, Tetsutaro Imagawa, Seiji Momota
Filed: 24 Nov 19
Utility
Semiconductor device and semiconductor device manufacturing method
1 Feb 22
Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.
Takashi Yoshimura, Yuichi Onozawa, Hiroshi Takishita, Misaki Meguro, Motoyoshi Kubouchi, Naoko Kodama
Filed: 24 Feb 20
Utility
Semiconductor module
1 Feb 22
A semiconductor module, including a laminated substrate that has an insulating plate, a circuit board disposed on a top surface of the insulating plate, and a heat dissipation plate disposed on a bottom surface of the insulating plate.
Tomoyuki Wakiyama
Filed: 26 Aug 20
Utility
Semiconductor device and method of manufacturing semiconductor device
1 Feb 22
A semiconductor device includes an N-type silicon carbide layer, a P-type region, an N-type source region, a P-type contact region, a gate insulating film, a gate electrode, and a source electrode on the front surface side of an N-type silicon carbide substrate.
Akimasa Kinoshita, Yasuyuki Hoshi, Yuichi Harada, Yasuhiko Oonishi
Filed: 3 Oct 16
Utility
Power conversion apparatus, and power supply apparatus
1 Feb 22
There is provided a power conversion apparatus including: a first power supply terminal and a second power supply terminal which are paired with each other; a third power supply terminal and a fourth power supply terminal which are paired with each other; 1st to nth switches sequentially connected between the first power supply terminal and the fourth power supply terminal; 1st to nth rectifier devices sequentially connected between the first power supply terminal and the third power supply terminal; and each of 1st to (n−1)th capacitors which is physically disposed and electrically connected between an Nth terminal between an Nth switch and a (N+1)th switch, and an Nth terminal between an Nth rectifier device and a (N+1)th rectifier device, in which the 1st to nth switches are disposed to be physically aligned with the 1st to nth rectifier devices, respectively.
Satoru Fujita
Filed: 18 Feb 20
Utility
Flying capacitor circuit, circuit module and power conversion apparatus
1 Feb 22
If current path is switched via switching, voltage overshoot exceeding the device breakdown voltage may be generated.
Satoru Fujita, Yuto Matsui, Yusuke Onishi
Filed: 25 Feb 20
Utility
Method of manufacturing semiconductor integrated circuit
25 Jan 22
A method of manufacturing a semiconductor integrated circuit includes a first ion implantation process implanting impurity ions of a second conductivity type into a bottom surface of a semiconductor substrate by adjusting an acceleration voltage and a projection range for forming a first current suppression layer, and a second ion implantation process implanting impurity ions of a first conductivity type into the bottom surface of the semiconductor substrate by adjusting an acceleration voltage and a projection range for forming a second current suppression layer.
Hiroshi Kanno, Masaharu Yamaji, Hitoshi Sumida
Filed: 28 Sep 20
Utility
Switching control circuit and switching control method
25 Jan 22
A switching control circuit for controlling a power supply circuit that includes an inductor to which an input voltage is applied and through which an inductor current flows, and a transistor configured to control the inductor current.
Yuta Endo, Hironobu Shiroyama, Nobuyuki Hiasa, Hiroki Yamane
Filed: 24 Mar 21
Utility
Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor device
25 Jan 22
A silicon carbide semiconductor device includes plural p-type silicon carbide epitaxial layers provided on an n+-type silicon carbide substrate.
Naoyuki Ohse, Makoto Utsumi, Yasuhiko Oonishi
Filed: 30 Oct 17
Utility
Automatic vending machine
18 Jan 22
An automatic vending machine includes a product housing rack including a plurality of product housing shelves that are disposed in an up-down direction, a plurality of product housing paths corresponding to the plurality of product housing shelves, each product housing path being defined in the corresponding product housing shelf and configured to house products, a plurality of product discharge devices corresponding to the plurality of product housing shelves and the plurality of product housing paths, each product discharge device being configured to separate and discharge, one by one, the products that are housed in the corresponding product housing path.
Katsuhiko Fukuda, Tsutomu Iwako, Yasuo Nakazato, Yasuhiro Yamazaki, Takashi Nishiyama
Filed: 1 Jul 20
Utility
Overcurrent detection device, control device, and overcurrent detection method
18 Jan 22
In recent years, an improvement in detection accuracy of an overcurrent is desired.
Masashi Akahane
Filed: 30 Sep 19
Utility
Beverage extraction device
11 Jan 22
A beverage extraction device includes: a cylinder, having a bottomed cylindrical shape, having a lower-surface opening which is closed with a bottom portion; a mesh member, having a disk shape, having a plurality of through holes, moving close to and away from the bottom portion to extract beverage from beverage raw material and hot water, fed through an upper-surface opening of the cylinder, so that the extracted beverage is discharged through an extraction passage connected to the bottom portion; an ultrasonic vibrator provided on the bottom portion; and a control unit, when a cleaning instruction is given, driving the ultrasonic vibrator in a state where the hot water is stored in the cylinder to apply ultrasonic waves to the hot water, and causing the mesh member to move close to and away from the bottom portion.
Yohei Nishikawa, Hajime Erikawa
Filed: 25 Feb 19
Utility
Method of manufacturing semiconductor device
11 Jan 22
A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate.
Naoko Kodama
Filed: 28 May 20
Utility
Power conversion device, control method, and computer-readable medium
11 Jan 22
A power conversion device includes a transformer, and a first bridge circuit connected to a primary-side of the transformer and capable of switching a polarity of a connection between a pair of DC bus bars on the primary-side and the transformer.
Ryuji Yamada
Filed: 26 Oct 20
Utility
Snubber module, snubber apparatus and power conversion apparatus
4 Jan 22
A snubber module is provided, which constitutes a snubber apparatus attachable to a terminal of a semiconductor module.
Qichen Wang, Ryuji Yamada
Filed: 24 Feb 20
Utility
Resistive element
28 Dec 21
A resistive element includes: a semiconductor substrate; a lower insulating film deposited on the semiconductor substrate; a resistive layer deposited on the lower insulating film; an interlayer insulating film covering the resistive layer; a pad-forming electrode deposited on the interlayer insulating film, and including a first edge portion connected to one edge portion of the resistive layer and a second edge portion opposite to the first edge portion to be in electrical Schottky contact with the semiconductor substrate; a relay wire having one edge connected to another edge portion of the resistive layer to form an ohmic contact to the semiconductor substrate; and a counter electrode provided under the semiconductor substrate, wherein the resistive element uses a resistance value between the pad-forming electrode and the counter electrode.
Daishi Nagai
Filed: 23 Apr 20
Utility
Semiconductor device with a diagnosing section that diagnoses correction memory and sensor apparatus
28 Dec 21
To detect deterioration of a correction memory, provided is a semiconductor device including the correction memory that stores therein correction data for correcting a correction target; a correcting section that corrects a detection value of a sensor element, using correction data read from the correction memory; a diagnosing section that diagnoses the correction memory, using the correction data read from the correction memory; and a control section that controls reading conditions used when reading the correction data from the correction memory, wherein the control section causes a first reading condition, used when reading the correction data for correcting a correction target, to differ from a second reading condition, which is used when reading the correction data for the diagnosis.
Kazuhiro Matsunami, Katsuhiro Shimazu
Filed: 24 May 20
Utility
Insulated-gate semiconductor device
21 Dec 21
An insulated-gate semiconductor device includes: a carrier transport layer of a first conductivity-type made of a semiconductor material having a wider band gap than silicon; a lower buried region of a second conductivity-type buried in an upper portion of the carrier transport layer; a plurality of upper buried regions of the second conductivity-type dispersedly deposited on the lower buried region; an injection control region of the second conductivity-type deposited on the upper buried regions; and an insulated gate structure controlling a surface potential of the injection control region adjacent to a side wall of a trench, wherein the trench has a stripe-like shape, the lower buried region includes a first stripe provided separately from the trench, and the respective upper buried regions are provided at intervals on the first stripe.
Hiroyuki Miyashita
Filed: 30 Jan 20