997 patents
Page 21 of 50
Utility
Semiconductor integrated circuit having a first buried layer and a second buried layer
9 Nov 21
A semiconductor integrated circuit includes: a semiconductor base body of a first conductivity type; a first well region of a second conductivity type, deposited at an upper portion of the semiconductor base body, to which a first potential is applied; a second well region of the first conductivity type, deposited at an upper portion of the first well region, to which a second potential lower than the first potential is applied; a main electrode region to which the second potential is applied, the main electrode region being deposited at the upper portion of the first well region and away from the second well region; a first buried layer of the second conductivity type buried locally under the second well region; and a second buried layer of the second conductivity type buried locally under the main electrode region and away from the first buried layer.
Masaharu Yamaji
Filed: 24 Sep 19
Utility
Fluid measuring apparatus
9 Nov 21
A fluid measuring apparatus, including a pair of ultrasonic wave probes in which one is disposed more upstream than the other, a processor, and a non-transitory storage medium containing program instructions therein.
Masami Kishiro, Yasufumi Morimoto
Filed: 1 May 18
Utility
Door control device
2 Nov 21
A door control device includes: an electric motor control unit configured to drive, in response to a closing command for closing a door that is driven to be opened and closed by an electric motor, the electric motor; a door closed state detection unit configured to detect a closed state of the door; and a lock command output unit configured to output a lock command to lock a locking device of the door, upon the closed state being detected when a predetermined waiting time has passed after the electric motor was driven by the electric motor control unit in response to the closing command and the closed state was detected by the door closed state detection unit.
Kenji Fujita, Atsushi Kitabata
Filed: 26 Mar 19
Utility
Evaluation method, combined evaluation method, evaluation apparatus, and combined evaluation apparatus
2 Nov 21
The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated.
Hiroki Katsumata, Michio Tamate, Miwako Fujita, Tamiko Asano, Yuhei Suzuki, Takashi Kaimi, Yuta Sunasaka, Tadanori Yamada, Ryu Araki, Bao Cong Hiu
Filed: 29 Jan 19
Utility
Method of manufacturing semiconductor integrated circuit
2 Nov 21
A method of manufacturing a semiconductor integrated circuit, includes: forming a first well region having a second conductivity type in an upper portion of a support layer having a first conductivity type; forming an oxide film on the first well region by a thermal oxidation method to decrease a concentration of impurities at an top surface of top surface side of the first well region; removing the oxide film; forming a second well region having the first conductivity type in an upper portion of the first well region; and merging a semiconductor element having a main electrode region having the second conductivity type in the second well region.
Yoshiaki Toyoda
Filed: 10 Dec 18
Utility
Semiconductor device manufacturing method and soldering support jig
2 Nov 21
A semiconductor device manufacturing method includes: applying solder to an arrangement area of a substrate, the substrate having a connection area to which a wiring member is to be directly connected, the connection area neighboring the arrangement area; arranging a component on the arrangement area via the solder; and soldering the component to the arrangement area by heating the solder while covering the connection area.
Rikihiro Maruyama, Kenshi Kai, Kazuya Adachi
Filed: 23 Dec 19
Utility
Semiconductor device
2 Nov 21
A gate pad is includes a first portion disposed in a gate pad region and a second portion disposed in a gate resistance region and connected to the first portion, the gate pad has a planar shape in which the second portion protrudes from the first portion.
Keiji Okumura
Filed: 27 Jan 20
Utility
Stationary induction apparatus and power converter using same
2 Nov 21
A stationary induction apparatus includes a plurality of stationary device structures, each including: a stationary induction device including a core that has a plurality of magnetic legs and yokes connecting both ends of the plurality of magnetic legs, and windings that are respectively wound around the plurality of magnetic legs of the core; and a pair of yoke supports that respectively extend along the yokes on both ends of the stationary induction device and individually support the respective yokes; and a pair of connecting support members to which both ends of the pairs of yoke supports are respectively fixed such that the plurality of stationary device structures are arranged parallel to one another to form airflow paths between the respective stationary induction device that are disposed adjacent to each other.
Kiyoshi Takahashi
Filed: 6 Aug 18
Utility
Drive circuit, drive method, and semiconductor system
2 Nov 21
A drive circuit includes: a control section generating a control signal; a first level shift section raising a level of a signal from the control section; a high side drive section controlling a semiconductor device; and a second level shift section lowering a level of a signal from the high side drive section for input to the control section.
Masashi Akahane
Filed: 26 Mar 20
Utility
Snubber device and power conversion apparatus
2 Nov 21
A snubber device to be mounted to a terminal of a semiconductor module is provided.
Ryuji Yamada, Qichen Wang, Kazuyuki Yoda
Filed: 25 Nov 19
Utility
Integrated circuit for power factor correction and power supply circuit containing the same
2 Nov 21
A power supply circuit that generates an output voltage from an AC voltage.
Nobuyuki Hiasa, Yuta Endo, Yukihiro Yaguchi
Filed: 13 Dec 19
Utility
Uninterruptible power supply system and uninterruptible power supply
2 Nov 21
In an uninterruptible power supply system, an uninterruptible power supply operates based on a command to an inverter held in a holder before an abnormality occurs in communication when the abnormality occurs in the communication between an operation board and the uninterruptible power supply.
Yasuhiro Tamai
Filed: 24 Aug 20
Utility
Silicon carbide semiconductor substrate
26 Oct 21
A silicon carbide semiconductor substrate includes an epitaxial layer.
Fumikazu Imai
Filed: 18 Mar 20
Utility
Power semiconductor module and vehicle
26 Oct 21
A power semiconductor module including a cooling apparatus and a power semiconductor device mounted on the cooling apparatus, wherein the cooling apparatus includes: a ceiling plate that; a case; and a cooling fin, a ceiling plate and the case respectively include fastening portions that are used to fasten the ceiling plate and the case to an external apparatus, while the ceiling plate and the outer edge portion are arranged in an overlapping manner, the power semiconductor device includes a circuit substrate and a terminal case, the fastening portions protrude farther outward than a periphery of the ceiling plate, and the terminal case includes a case body arranged along a perimeter of the circuit substrate and reinforcing portions that extend to top surface sides of the fastening portions.
Hiromichi Gohara, Takafumi Yamada, Yuta Tamai
Filed: 30 Jul 19
Utility
Semiconductor device
26 Oct 21
Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.
Yuichi Harada
Filed: 27 Oct 19
Utility
Method of manufacturing a semiconductor device including a shoulder portion
26 Oct 21
A semiconductor device including a semiconductor substrate; a trench formed in a front surface of the semiconductor substrate; a gate conducting portion formed within the gate trench; and a first region formed adjacent to the trench in the front surface of the semiconductor substrate and having a higher impurity concentration than the semiconductor substrate.
Tatsuya Naito
Filed: 26 Nov 19
Utility
Semiconductor device
26 Oct 21
A gate pad includes a first portion disposed in a gate pad region and a second portion continuous with the first portion and disposed in a gate resistance region.
Akimasa Kinoshita
Filed: 29 Aug 19
Utility
Integrated circuit and switching circuit
26 Oct 21
An integrated circuit that drives a switching device provided between a first line on a ground side and a second line on a power supply side, when a power supply voltage is applied between a first input terminal connected with a first capacitor and a second input terminal, the first capacitor having one end grounded and another end connected to the first input terminal, the integrated circuit includes: a first terminal connected to a circuit element, the circuit element having one end grounded and another end connected to the first terminal; and a drive circuit that changes a voltage at the first terminal to one logic level when a drive signal of the switching device changes to the one logic level, and changes the voltage at the first terminal to another logic level when the drive signal changes to the other logic level.
Ryuji Yamada, Ryuunosuke Araumi, Takato Sugawara
Filed: 26 Nov 19
Utility
Gate driver and power converter
19 Oct 21
A gate driver includes: a drive circuit configured to drive, in accordance with an input signal that commands to turn on/off a switching element connected between high and low power supply potential parts, a gate of the switching element; a time storage circuit configured to store a time length from when the input signal is switched to an on command to when a recovery surge voltage generated by a diode that is opposite to the switching element is detected; a switching determination circuit configured to determine, in accordance with a detected value of a power supply voltage, whether to switch a gate driving condition; and a driving condition change circuit configured to change, in accordance with a determination result of the switching determination circuit, the gate driving condition at a time of current turn-on by the time length stored at a time of previous turn-on.
Kunio Matsubara
Filed: 23 Sep 20
Utility
Nitride semiconductor device
19 Oct 21
The nitride semiconductor device includes: a nitride semiconductor layer; a first conductivity type source region provided on a surface of the nitride semiconductor layer; a second conductivity type well region provided in the nitride semiconductor layer and adjacent to the source region in a first direction parallel to the surface and in a second direction intersecting with the first direction; a trench located on the opposite side of the source region with the well region sandwiched therebetween in the first direction; a first conductivity type impurity region located between the well region and the trench; an insulating film provided on a bottom surface of the trench; a gate insulating film provided on the well region; and a gate electrode provided from on the insulating film to on the gate insulating film.
Katsunori Ueno
Filed: 25 Feb 20