997 patents
Page 25 of 50
Utility
Semiconductor device manufacturing method and semiconductor device
10 Aug 21
To enhance efficiency of a process of implanting impurities into a silicon carbide semiconductor layer.
Katsushi Nishiyama, Masayuki Miyazaki, Shoji Kitamura
Filed: 30 Mar 20
Utility
Semiconductor apparatus
10 Aug 21
Provided is a semiconductor apparatus in which the buried region includes an end portion buried region continuously disposed from a region below the contact opening up to a region below the interlayer dielectric film while passing below an end portion of the contact opening in a cross section perpendicular to the upper surface of the semiconductor substrate, and the end portion buried region disposed below the interlayer dielectric film is shorter than the end portion buried region disposed below the contact opening in a first direction in parallel with the upper surface of the semiconductor substrate.
Takahiro Tamura, Yuichi Onozawa
Filed: 27 Jan 20
Utility
Variable magnetic flux-type permanent magnet rotary electric machine
10 Aug 21
Provided is a variable magnetic flux-type permanent magnet rotary electric machine wherein a leakage magnetic flux leaking from a certain permanent magnet included in the rotor core to a permanent magnet circumferentially adjacent on either side of the certain permanent magnet is controlled by q-axis current and thereby a magnetic flux emanating from the certain permanent magnet and linking with the armature coil wound on the stator is controlled without forming a mechanically weak part in the rotor core.
Hideki Oguchi, Makoto Terajima, Hitoshi Nakazono
Filed: 26 Jul 18
Utility
Method and apparatus for integrating current sensors in a power semiconductor module
10 Aug 21
An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module.
Robert D. Lorenz, Minhao Sheng, Hiroyuki Nogawa, Yoshinari Ikeda, Eiji Mochizuki
Filed: 15 May 17
Utility
Method of manufacturing semiconductor device
3 Aug 21
A method of manufacturing a semiconductor device from a semiconductor wafer in which a plurality of semiconductor chips are formed.
Hiroshi Takishita, Kazuhiro Kitahara, Ryouichi Kawano, Motoyoshi Kubouchi
Filed: 27 Aug 19
Utility
Semiconductor device and method for manufacturing semiconductor device
3 Aug 21
A semiconductor device includes a first electrode, a silicon carbide substrate having a first surface electrically connected with the first electrode and a second surface opposite to the first surface, an ohmic junction layer disposed on the second surface, and a second electrode disposed on the ohmic junction layer.
Naoyuki Ohse
Filed: 27 Dec 19
Utility
Insulated-gate semiconductor device and method of manufacturing the same
3 Aug 21
A method of manufacturing an insulated-gate semiconductor device, includes: digging a gate trench and a dummy trench; burying a dummy electrode in the dummy trench via a gate insulating film and burying a gate electrode in the gate trench via the gate insulating film; exposing an upper portion of the dummy electrode and selectively forming an insulating film for testing so as to cover the gate electrode; depositing a conductive film for testing on the dummy electrode and the insulating film for testing; and selectively testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the conductive film for testing and the charge transport, region.
Takamasa Ishikawa, Seiji Noguchi
Filed: 24 Dec 19
Utility
Semiconductor device
3 Aug 21
A semiconductor device having a power source terminal, a ground terminal, an input terminal, an output terminal and a status output terminal.
Sho Nakagawa
Filed: 26 May 20
Utility
Cooler and semiconductor module
27 Jul 21
Provided is a cooler having high cooling efficiency and low pressure loss of fluid.
Ryoichi Kato, Hiromichi Gohara, Yoshinari Ikeda, Tomoyuki Miyashita, Yoshihiro Tateishi, Shunsuke Numata
Filed: 31 Jul 20
Utility
Semiconductor device and semiconductor device fabrication method
27 Jul 21
A semiconductor device includes a printed circuit board in a peripheral portion of a housing portion of a case in which a laminated substrate is housed.
Shin Soyano
Filed: 25 Jul 19
Utility
Electrophotographic photoreceptor, production method thereof, and electrophotographic apparatus
27 Jul 21
An electrophotographic photoreceptor includes an electroconductive substrate; and a photosensitive layer that is formed on the electroconductive substrate and that contains an inorganic oxide and a lubricant resin which contains a polycarbonate resin having a siloxane structure therein or a polyarylate resin having a siloxane structure therein.
Fengqiang Zhu, Tomoki Hasegawa, Shinjiro Suzuki, Masaru Takeuchi
Filed: 29 Jan 20
Utility
Electrophotographic photoconductor, method of manufacturing the same, and electrophotographic device including the same
27 Jul 21
An electrophotographic photoconductor includes a conductive substrate; and a photosensitive layer provided on the conductive substrate and containing a charge generation material, a hole transport material, a first electron transport material, from 3% by mass to 40% by mass of a second electron transport material, a resin binder, and an inorganic oxide filler surface-treated with a silane coupling agent.
Tomoki Hasegawa, Shinjiro Suzuki, Fengqiang Zhu
Filed: 31 May 20
Utility
Semiconductor device with at least one lower-surface side lifetime control region
20 Jul 21
To provide a semiconductor device, wherein each of a transistor portion and a diode portion that are arrayed along an array direction has: a second-conductivity type base region provided above a first-conductivity type drift region inside a semiconductor substrate; a plurality of trench portions that penetrate the base region from an upper surface of the semiconductor substrate, extend at the upper surface of the semiconductor substrate and in a direction of extension perpendicular to the array direction, and have conductive portions provided therein; and a lower-surface side lifetime control region that lies on a lower-surface side in the semiconductor substrate, and from the transistor portion to the diode portion, and includes a lifetime killer.
Tatsuya Naito
Filed: 28 Jun 19
Utility
Semiconductor device
20 Jul 21
Provided is a semiconductor device including an input terminal including a P terminal and an N terminal; a laminated circuit substrate connected to the input terminal; a power substrate provided above the laminated circuit substrate; a connecting section electrically connecting the laminated circuit substrate and the power substrate; a capacitor provided in a conduction path between the P terminal and the N terminal; and a resistor provided in series with the capacitor in the conduction path between the P terminal and the N terminal.
Hayato Nakano
Filed: 3 Jun 19
Utility
Semiconductor device manufacturing method
20 Jul 21
A conductive plate has a front surface at a front side and a rear surface at a rear side.
Kenshi Kai, Rikihiro Maruyama
Filed: 23 Jul 19
Utility
Silicon carbide semiconductor device and method for manufacturing the same
20 Jul 21
A silicon carbide semiconductor device includes a first semiconductor layer of silicon carbide, a device structure provided on top of the first semiconductor layer, a second semiconductor layer of silicon carbide having a higher impurity concentration than the first semiconductor layer, provided under the first semiconductor layer, the second semiconductor layer implementing an ohmic-contact, and a metallic electrode film provided under the second semiconductor layer.
Kenichi Iguchi, Haruo Nakazawa, Yusuke Wada
Filed: 22 Mar 19
Utility
Semiconductor device
20 Jul 21
A semiconductor device that compensates for imbalance between a plurality of semiconductor elements connected in parallel by negative feedback to achieve current balance utilizing reversed temperature characteristics without providing any dedicated element just for cancelling temperature characteristics.
Morio Iwamizu
Filed: 11 Feb 15
Utility
Semiconductor device manufacturing method
20 Jul 21
A pressing area set on a main surface of a plate-shaped holding jig is arranged on contact parts.
Bin Wan Mat Wan Azha, Takeshi Yokoyama
Filed: 27 Dec 19
Utility
Gas alarm device and gas detection method
13 Jul 21
A gas alarm device is provided, where a heating control section extends a heating period of time of a heater section if a first determination section determines that electrical characteristics of a sensing section of a gas sensor satisfy a first condition, and continues extension of the heating period of time of the heater section according to a determination result, by a second determination section, of whether or not the electrical characteristics upon lapse of extension of the heating period of time satisfy a second condition, and a gas detection section determines, according to the electrical characteristics upon lapse of extension time, that detection target gas is detected.
Naoyoshi Murata, Takuya Suzuki, Makoto Okamura, Tsuyoshi Kamioka, Hisao Ohnishi, Atsushi Nonaka
Filed: 21 Jan 19
Utility
Nitride semiconductor device
13 Jul 21
A nitride semiconductor device is provide, the nitride semiconductor device including: an epitaxial layer; and an ion implantation layer that is provided on the epitaxial layer over a continuous depth range that extends over 100 nm or longer, and has a P type doping concentration equal to or higher than 1×1017 cm−3, wherein the ion implantation layer has a region with a crystal defect density equal to or lower than 1×1016 cm−3, the region being located in a range which is on an upper-surface-side of an interface between the epitaxial layer and the ion implantation layer, and is within 100 nm from the interface.
Shinya Takashima, Ryo Tanaka, Yuta Fukushima, Hideaki Teranishi
Filed: 12 Mar 19