997 patents
Page 26 of 50
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
13 Jul 21
At an upper surface of a gate electrode, a recess occurs due to etching back of poly-silicon for forming the gate electrode.
Shin'ichi Nakamata, Masanobu Iwaya, Keiji Okumura
Filed: 24 Jul 19
Utility
Insulated-gate semiconductor device and method of manufacturing the same
13 Jul 21
A method of manufacturing an insulated-gate semiconductor device includes: digging a dummy trench and digging a gate trench so as to have a U-like shape in a planar pattern to surround the dummy trench into the U-like shape; forming a dummy electrode and a gate electrode in the dummy trench and the gate trench via a gate insulating film; forming a projection for testing connected to the dummy electrode via an opening of the U-like shape and a wiring layer for testing; and testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the wiring layer for testing and a charge transport region.
Takamasa Ishikawa, Noriaki Yao, Seiji Noguchi
Filed: 27 Jan 20
Utility
Switching power supply
13 Jul 21
A switching power supply includes a current resonance-type DC-DC converter that has an auxiliary winding provided on the primary side of a transformer, divides a voltage, which has been generated in the auxiliary winding by a current resonance operation, using a voltage divider circuit formed of resistors, and supplies, to a control IC, the divided voltage as a detection voltage for the resonant voltage for setting a timing for turning off a switching element.
Jian Chen
Filed: 30 Jan 20
Utility
Semiconductor module
6 Jul 21
A semiconductor module includes: a first circuit substrate having a conductive layer disposed on an insulating plate; a plurality of semiconductor elements on the conductive layer, a second circuit substrate disposed above the semiconductor elements, the second circuit substrate having a main current wiring layer and a control wiring layer positioned in a layer above the main current wiring layer; a first lead terminal vertically extending upwards from and in contact with the main current wiring layer; a second lead terminal vertically extending upwards from and in contact with the conductive layer of the first circuit substrate; a third lead terminal vertically extending upwards from and in contact with the control wiring layer; and a sealing material covering at least some of the elements mentioned above.
Katsumi Taniguchi
Filed: 4 Sep 19
Utility
Gate driver and power converter
6 Jul 21
A gate driver for driving a gate of a switching element in accordance with an input signal is provided.
Kunio Matsubara, Tsuyoshi Nagano
Filed: 21 Feb 20
Utility
Semiconductor device and fabrication method thereof
29 Jun 21
In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor.
Motoyoshi Kubouchi, Soichi Yoshida
Filed: 30 Sep 19
Utility
Semiconductor device
29 Jun 21
A semiconductor device is provided comprising: a semiconductor substrate; a drift region having a first conductivity type formed in the semiconductor substrate; a collector region having a second conductivity type, in the semiconductor substrate, formed between the lower surface of the semiconductor substrate and the drift region; and a high concentration region having a first conductivity type, in the semiconductor substrate, formed between the drift region and the collector region and having higher doping concentration than that in the drift region, wherein a doping concentration distribution of the high concentration region in the depth direction of the semiconductor substrate comprises one or more peaks, wherein a distance between a first peak closest to the lower surface side of the semiconductor substrate among the peaks of the doping concentration distribution of the high concentration region and the lower surface of the semiconductor substrate is 3 μm or less.
Kota Ohi, Yuichi Onozawa, Yoshihiro Ikura
Filed: 27 Sep 18
Utility
Silicon carbide semiconductor device
29 Jun 21
A first portion of the poly-silicon layer is provided on a first face of a front surface of a semiconductor substrate via a gate insulating film in an edge termination region and configures a gate runner.
Tsuyoshi Araoka
Filed: 2 Mar 20
Utility
Power module with built-in drive circuit
29 Jun 21
A power module including a half bridge circuit having first and second switching elements respectively included in an upper arm and a lower arm thereof, and upper and lower arm drive circuits which respectively drive the first and second switching elements.
Ryu Araki
Filed: 23 Jun 20
Utility
Semiconductor device and manufacturing method of the same
22 Jun 21
A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate.
Soichi Yoshida
Filed: 26 Nov 18
Utility
Semiconductor device
22 Jun 21
In an edge termination region, a second gate runner for a current sensor is formed between a first gate runner for a main semiconductor device and an active region.
Yasuyuki Hoshi
Filed: 1 May 20
Utility
Semiconductor device
22 Jun 21
Provided is a semiconductor device comprising: a semiconductor substrate; a gate trench section that is provided from an upper surface to an inside of the semiconductor substrate and extends in a predetermined extending direction on the upper surface of the semiconductor substrate; a mesa section in contact to the gate trench section in an arrangement direction orthogonal the extending direction; and an interlayer dielectric film provided above the semiconductor substrate; wherein the interlayer dielectric film is provided above at least a part of the gate trench section in the arrangement direction; a contact hole through which the mesa section is exposed is provided to the interlayer dielectric film; and a width of the contact hole in the arrangement direction is equal to or greater than a width of the mesa section in the arrangement direction.
Tatsuya Naito
Filed: 27 Nov 19
Utility
Electrophotographic photoreceptor, method for manufacturing same, and electrophotographic device
15 Jun 21
An electrophotographic photoreceptor, including a photosensitive layer formed on an electroconductive substrate.
Seizo Kitagawa, Kazuya Saito, Shinjiro Suzuki, Toshiki Takeuchi
Filed: 1 Apr 20
Utility
Semiconductor module and semiconductor module manufacturing method
15 Jun 21
A semiconductor module includes block-shaped first and second lower base members provided by bonding of flat lower surfaces on an insulated circuit board and having bottomed first and second hole portions open in upper surfaces in upper portions of the first and second lower base members, tubular first and second upper slide support members inserted in the first and second hole portions in a state where at least a part of outside surfaces is in contact with inside walls of the first and second hole portions, first and second pins inserted in contact with the insides of the first and second upper slide support members, and a sealing resin sealing the first and second pins except for the upper portions of the first and second pins.
Yuhei Nishida, Tatsuo Nishizawa
Filed: 28 Nov 18
Utility
Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
15 Jun 21
A silicon carbide semiconductor device includes a semiconductor substrate and a first semiconductor layer of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; a gate electrode provided opposing at least a surface of the second semiconductor layer between the first semiconductor region and the first semiconductor layer, across a gate insulating film; and a first electrode provided on surfaces of the first semiconductor region and the second semiconductor layer.
Takumi Fujimoto
Filed: 24 Sep 18
Utility
Drive signal generating circuit and power supply circuit for improving power factor thereof
15 Jun 21
A drive signal generating circuit that generates a drive signal for turning on and off a transistor based on an output voltage and an inductor current flowing through an inductor, includes: a reference current output unit that outputs a reference current serving as a reference for the inductor current; a command value output unit that outputs a command value for increasing and decreasing the inductor current when the inductor current is smaller and greater than the reference current, respectively; and a drive signal output unit that outputs the drive signal based on the command value such that the output voltage achieves a target level, the reference current output unit configured to output the reference current based on the command value output from the command value output unit and a value corresponding to a first error between a level of the output voltage and the target level.
Ryuji Yamada
Filed: 26 Nov 19
Utility
Gate drive apparatus and switching apparatus
15 Jun 21
A drive apparatus that drives a control terminal of a main switching element establishing/cutting off an electrical connection between a first main terminal and a second main terminal is provided, including first to fourth switching elements establishing/cutting off electrical connections between a positive terminal of a power source and the control terminal, the positive terminal and the second main terminal, the control terminal and a negative terminal of the power source, and the second main terminal and the negative terminal, respectively, and a resistance of at least one among a path between the control terminal and the second main terminal via the first to second switching elements, a path via the first and fourth switching elements, a path via the second to third switching elements, and a path via the third to fourth switching element is different from a resistance of at least one of the others.
Nobuharu Kusakari
Filed: 28 Mar 19
Utility
Semiconductor device and method of manufacturing semiconductor device
8 Jun 21
A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type on a semiconductor substrate of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; trenches penetrating the second semiconductor layer and the first semiconductor region, and reaching the first semiconductor layer; gate electrodes on gate insulating films in the trenches; a first base region between the trenches; and second base regions at bottoms of the trenches.
Syunki Narita
Filed: 22 Nov 19
Utility
Semiconductor device
8 Jun 21
A semiconductor device is provided, including: a first conductivity-type drift region formed in the semiconductor substrate; a second conductivity-type base region formed between the upper surface of the semiconductor substrate and the drift region; a first conductivity-type accumulation region formed between the drift region and the base region and having a higher doping concentration than the drift region; and a dummy trench portion formed to penetrate the base region from the upper surface of the semiconductor substrate, wherein at least one of the accumulation region and the dummy trench portion has a suppressing structure that suppresses formation of a second conductivity-type inversion layer in a first conductivity-type region adjacent to the dummy trench portion.
Tatsuya Naito
Filed: 13 Apr 20
Utility
Drive signal generating circuit and power supply circuit
8 Jun 21
A power supply circuit having a rectifier circuit that rectifies an AC voltage, an inductor, a transistor that controls an inductor current flowing through the inductor, a drive signal generating circuit that generates a drive signal based on the inductor current and an output voltage generated from the AC voltage, and a drive signal output circuit outputting the drive signal.
Ryuji Yamada
Filed: 26 Dec 19