997 patents
Page 30 of 50
Utility
Method for producing magnetic recording medium
16 Feb 21
The purpose of the present invention is to provide a magnetic recording medium having a stacked structure of a seed layer including (Mg1-xTix)O and a magnetic recording layer including an L10 ordered alloy, and having improved properties.
Tomohiro Moriya, Hitoshi Nakata, Takehito Shimatsu
Filed: 2 Oct 17
Utility
Core and transformer
16 Feb 21
A core is provided that includes a corner part facing a winding wound on a shaft part, the corner part being chamfered into a curved surface shape.
Takeshi Watanabe, Kenji Okamoto
Filed: 23 May 18
Utility
Semiconductor device and method of manufacturing semiconductor device
16 Feb 21
A semiconductor device includes: an insulated circuit board including metal layers having recesses, and an insulating board having an upper surface on which the metal layers are arranged; external terminals having bottom ends with a width narrower than the width of openings of the recesses, these bottom ends being inserted into the recesses; a printed circuit board that directly supports the external terminals; and first bonding material that is arranged inside the recesses and respectively conductively connects the bottom ends of the external terminals to the metal layers.
Hideyo Nakamura, Tatsuo Nishizawa
Filed: 6 Feb 19
Utility
Manufacturing method for controlling carrier lifetimes in semiconductor substrates that includes injection and annealing
16 Feb 21
A semiconductor device comprises: an n-type semiconductor substrate; a p-type anode region formed in the semiconductor substrate on its front surface side; an n-type field stop region formed in the semiconductor substrate on its rear surface side with protons as a donor; and an n-type cathode region formed in the semiconductor substrate to be closer to its rear surface than the field stop region is, wherein a concentration distribution of the donor in the field stop region in its depth direction has a first peak, and a second peak that is closer to the rear surface of the semiconductor substrate than the first peak is, and has a concentration lower than that of the first peak, and a carrier lifetime in at least a partial region between the anode region and the cathode region is longer than carrier lifetimes in the anode region.
Hiroki Wakimoto, Hiroshi Takishita, Takashi Yoshimura, Takahiro Tamura, Yuichi Onozawa
Filed: 4 Jun 19
Utility
Control apparatus for controlling switching power supply
16 Feb 21
An apparatus for controlling a switching power supply during burst control that includes a switching period and a no switching period.
Tsuyoshi Yoshizawa, Jian Chen
Filed: 28 Aug 19
Utility
Semiconductor device
9 Feb 21
Provided is a semiconductor device including a semiconductor chip; a frame member having a chip placement surface on which the semiconductor chip is provided; and a first suspension lead and a second suspension lead connected to the frame member and provided on any side of the frame member, wherein M1≤L1+L2 is satisfied, where L1 is a distance from an arrangement position of the first suspension lead to a corner of the chip placement surface close to the first suspension lead, L2 is a distance from an arrangement position of the second suspension lead to a corner of the chip placement surface close to the second suspension lead, and M1 is a distance from the arrangement position of the first suspension lead to the arrangement position of the second suspension lead.
Yoshihiro Yasuda, Takayuki Shimatou, Kenpei Nakamura
Filed: 21 Dec 18
Utility
Semiconductor module
9 Feb 21
Ryoichi Kato, Kohei Yamauchi, Hiromichi Gohara, Tatsuhiko Asai
Filed: 4 Sep 18
Utility
Semiconductor device having a transistor portion that includes an output resistive portion
9 Feb 21
Improving reliability of a semiconductor device including a transistor and resistance portion.
Takatoshi Oe
Filed: 25 Jun 18
Utility
Semiconductor device
9 Feb 21
Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected.
Seiji Momota, Hitoshi Abe, Takashi Shiigi, Takeshi Fujii, Koh Yoshikawa, Tetsutaro Imagawa, Masaki Koyama, Makoto Asai
Filed: 2 Sep 16
Utility
Semiconductor integrated circuit and method of manufacturing the same
9 Feb 21
A semiconductor integrated circuit includes: an n−-type support layer; a p-type well region provided in an upper portion of the support layer; a p+-type circuit side buried layer provided inside the well region; an n+-type first and second terminal regions provided in an upper portion of the well region and above the circuit side buried layer; a p-type body region provided in an upper portion of the support layer; a control electrode structure provided in a gate trench; a p+-type output side buried layer provided inside the body region so as to be in contact with the control electrode structure; and an n+-type output terminal region provided in an upper portion of the body region and above the output side buried layer, wherein an output stage element having the output terminal region is controlled by a circuit element including the first and second terminal regions.
Yoshiaki Toyoda
Filed: 22 Mar 19
Utility
Semiconductor device
9 Feb 21
Provided is a semiconductor device including a drift region having a first conductivity type provided on a semiconductor substrate; a plurality of trench portions provided above the drift region, on a top surface side of the semiconductor substrate; a base region having a second conductivity type provided in a mesa portion sandwiched between the plurality of trench portions, in the semiconductor substrate; an emitter region having the first conductivity type provided above the base region, on a top surface of the mesa portion; and a contact region having the second conductivity type and a higher doping concentration than the base region, provided adjacent to the emitter region on the top surface of the mesa portion, wherein a mesa width of the mesa portion is less than or equal to 100 nm, and a bottom end of the contact region is shallower than a bottom end of the emitter region.
Yosuke Sakurai, Yuichi Onozawa, Akio Nakagawa
Filed: 20 Feb 19
Utility
Power converter for railroad vehicle
2 Feb 21
In this power converter for a railroad vehicle, a cooling portion includes a first cooling portion arranged to block up an opening while ensuring watertightness and to come into contact with a semiconductor element through the opening, and a second cooling portion provided to be opposed to an outer surface of a power converter body not provided with the opening and adjacent to a side provided with the first cooling portion.
Yoshihisa Uehara, Jun Kanda
Filed: 25 Jun 18
Utility
Method of manufacturing semiconductor device
2 Feb 21
A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate.
Naoko Kodama
Filed: 24 Oct 19
Utility
Semiconductor device having a resin case with a notch groove
2 Feb 21
A semiconductor device has a configuration in which a stacked assembly and a resin case are combined.
Tatsuhiko Asai, Katsumi Taniguchi
Filed: 28 Feb 17
Utility
Semiconductor element and semiconductor device
2 Feb 21
Provided are a semiconductor element and a semiconductor device capable of reducing possibilities of malfunctions and breakdowns due to temperature rise.
Takeyoshi Nishimura, Isamu Sugai
Filed: 24 Jul 19
Utility
Semiconductor device having semiconductor regions with an impurity concentration distribution which decreases from a respective peak toward different semiconductor layers
2 Feb 21
In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided.
Masaki Tamura, Hitoshi Abe, Takeshi Fujii
Filed: 26 Oct 18
Utility
Semiconductor device
2 Feb 21
The present invention provides a semiconductor device including (a) a drift region of a first-conductivity-type, (b) a base region of a second-conductivity-type, (c) a plurality of trench portions arranged next to each other in a predetermined arrangement direction on the upper surface of the semiconductor substrate, (d) an emitter region of a first-conductivity-type which has a higher doping concentration than the drift region, (e) an accumulation region of a first-conductivity-type which has a higher doping concentration than the drift region, and (f) a second-conductivity-type region of a second-conductivity-type which has a higher doping concentration than the base region, wherein the accumulation region and the second-conductivity-type region are provided between the base region and the drift region in a non-channel mesa portion that does not have the emitter region provided therein and that is of mesa portions between adjacent ones of the plurality of trench portions.
Yoshihiro Ikura, Akio Nakagawa
Filed: 20 Feb 19
Utility
Semiconductor device driving device
2 Feb 21
A semiconductor device protection circuit for a semiconductor device driving circuit that switches a voltage-controlled semiconductor device ON and OFF includes a current detection circuit that detects current flowing through the semiconductor device and generates and outputs a current detection voltage representing the detected current; an overcurrent detection circuit that compares the current detection voltage to a variable overcurrent detection threshold voltage so as to detect for overcurrent flowing through the semiconductor device; a protection circuit that, when the overcurrent detection circuit detects overcurrent, controls the ON/OFF switching of the semiconductor device so as to prevent thermal breakdown of the semiconductor device; and a gate voltage detection circuit that, in accordance with a gate voltage of the semiconductor device, selectively sets the overcurrent detection threshold voltage to either a first threshold voltage or a second threshold voltage that is lower than the first threshold voltage.
Kei Minagawa
Filed: 6 Mar 18
Utility
Power factor improvement circuit and switching power supply device using same
2 Feb 21
A power factor correction circuit including: an error signal generation unit configured to output a signal obtained by amplifying an error between the output voltage of a boost chopper and a referential voltage; an oscillation unit configured to output a triangular wave signal; a zero current detection unit configured to detect zero current in an inductor current of the boost chopper; a drive signal generation unit configured to generate a drive signal for the switching element based on a zero current detection signal, the error signal, and the triangular wave signal; and an input interruption detection unit configured to detect an interruption state of an AC input voltage based on the zero current detection signal.
Nobuyuki Hiasa
Filed: 25 Mar 20
Utility
Drive circuit for power element
2 Feb 21
There is provided a drive circuit for turning on/off a power element which controls a main current flow between a first main electrode and a second main electrode in response to a drive signal applied to a control electrode.
Hidetomo Ohashi
Filed: 31 Aug 18