997 patents
Page 32 of 50
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
4 Jan 21
A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked.
Makoto Utsumi, Yoshiyuki Sakai
Filed: 14 Apr 19
Utility
Semiconductor device with current sense element
4 Jan 21
A semiconductor device, including a main switching element having a gate terminal and an emitter terminal, a sense switching element connected to the main switching element for detecting a current flowing through the main switching element, and a voltage division circuit connected between the gate terminal and the emitter terminal of the main switching element.
Masahiro Sasaki
Filed: 30 May 19
Utility
Semiconductor device and method of manufacturing a semiconductor device
28 Dec 20
Akimasa Kinoshita
Filed: 23 Oct 18
Utility
Oscillator circuit using comparator
28 Dec 20
An oscillator circuit uses a comparator, and the oscillator circuit controls charge-discharge of the Miller capacitance between the gate and the drain of a MOSFET serving as an amplifier of the gain unit and the gate capacitance of the MOSFET, and enables the comparator output to follow a relatively high-frequency control signal that is input externally.
Kenji Nakagomi
Filed: 24 Sep 19
Utility
Electronic component and power conversion device
28 Dec 20
Provided is an electronic component (13) that can be miniaturized while including a cooling structure.
Takanori Shintani, Isao Oka
Filed: 28 Mar 19
Utility
Milk beverage feeding device
14 Dec 20
A milk beverage feeding device includes an undiluted-solution storage storing a milk-beverage undiluted solution; an undiluted-solution feeder feeding the milk-beverage undiluted solution; a vapor feeder feeding a pressurized vapor in a pressurized state; an air feeder feeding compressed air in a compressed state; and a mixer mixing the milk-beverage undiluted solution fed from the undiluted-solution storage through the undiluted-solution feeder, the pressurized vapor fed from the vapor feeder, and the compressed air fed from the air feeder to form a mixture and feed the mixture as a milk beverage to a beverage container.
Yukihide Mochida
Filed: 31 Jul 17
Utility
Semiconductor device and method for manufacturing the same
14 Dec 20
A semiconductor device is disclosed in which proton implantation is performed a plurality of times to form a plurality of n-type buffer layers in an n-type drift layer at different depths from a rear surface of a substrate.
Yuichi Onozawa
Filed: 2 Dec 18
Utility
Method of manufacturing semiconductor device
14 Dec 20
A photoresist is applied to a front surface of a semiconductor wafer rotating at a predetermined rotational speed and a photoresist film having a predetermined thickness is formed and dried.
Naoko Kodama
Filed: 25 Jul 19
Utility
Semiconductor module and semiconductor device using the same
14 Dec 20
A semiconductor module includes: a sealing resin sealing an insulation circuit board so that a second metal layer is exposed to a rear plane and the rear plane is warped downward in a convex shape; and a cylindrical member including a center outer peripheral surface formed such that an upper portion is embedded in the sealing resin and including an unevenness and a lower outer peripheral surface provided below the center outer peripheral surface and smoother than the center outer peripheral surface and provided such that a bottom plane of a lower end of the lower outer peripheral surface is exposed from the rear plane of the sealing resin and the lower outer peripheral surface above the lower end of the lower outer peripheral surface is sealed by the sealing resin and is disposed near the end of the sealing resin in relation to the insulation circuit board.
Toshiyuki Miyasaka
Filed: 21 Mar 19
Utility
Semiconductor equipment
14 Dec 20
Semiconductor equipment includes semiconductor modules sealed with a resin, each having first and second connection terminals exposed from the resin, a capacitor including third and fourth connection terminals, a cooler directly contacting the semiconductor modules and the capacitor, a busbar including a first busbar connecting the first connection terminal to the third connection terminal, a second busbar connecting the second connection terminal to the fourth connection terminal, and a first insulating layer sandwiched by the first and second busbars, main surfaces of the first and second busbars being parallel to each other, a control circuit board configured to control the semiconductor modules, and a heat transfer component including a main body connected to the cooler, and a second insulating layer arranged on the main body, the main body being in contact with the busbar and the control circuit via the second insulating layer.
Motohito Hori, Yoshinari Ikeda, Akira Hirao, Mai Saitou, Ryoichi Kato
Filed: 30 Sep 19
Utility
Semiconductor device and method for manufacturing semiconductor device
14 Dec 20
A semiconductor device includes a plurality of broad buffer layers provided in a drift layer.
Michio Nemoto, Takashi Yoshimura
Filed: 26 Jul 18
Utility
Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device
14 Dec 20
During epitaxial growth of an n−-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n−-type lifetime reduced layer is selectively formed in the n−-type drift layer.
Takeshi Tawara, Koji Nakayama, Yoshiyuki Yonezawa, Hidekazu Tsuchida, Koichi Murata
Filed: 30 May 19
Utility
Semiconductor device and method of manufacturing semiconductor device
14 Dec 20
A semiconductor device includes a semiconductor substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the second conductivity type, a first semiconductor region of the first conductivity type, a second semiconductor region of the first conductivity type, a gate insulating film, and a gate electrode.
Yuichi Hashizume, Keishirou Kumada, Yasuyuki Hoshi
Filed: 26 Dec 18
Utility
Semiconductor device and method for controlling semiconductor device
14 Dec 20
A semiconductor device includes a main switching circuit implemented by a first semiconductor element and a second semiconductor element having a semiconductor region of a first conductivity type as a common region, including respectively a first well region of a second conductivity type and a second well region of a second conductivity type provided in an upper portion of the common region, the first semiconductor element being provided with a first source region of the first conductivity type in an upper portion of the first well region, the second semiconductor element being provided with a second source region of the first conductivity type in an upper portion of the second well region; and a drive circuit configured to independently apply a first drive signal and a second drive signal respectively to a control electrode of the first semiconductor element and a control electrode of the second semiconductor element.
Morio Iwamizu
Filed: 23 Jul 19
Utility
Method of manufacturing physical quantity sensor device and physical quantity sensor device
30 Nov 20
An inner housing part has through-holes for connecting first lead pins (power supply terminal, output terminal, ground terminal) with the connector pins.
Fumiya Ueno
Filed: 8 Jan 18
Utility
Control apparatus for resonant converter
30 Nov 20
A control apparatus for a resonant converter that receives a direct current (DC) voltage of a bulk capacitor.
Jian Chen
Filed: 25 Feb 20
Utility
Gate drive apparatus, switching apparatus, and gate drive method
30 Nov 20
A gate drive apparatus is provided.
Tsuyoshi Nagano, Kunio Matsubara
Filed: 18 Feb 20
Utility
Magnetic recording medium
23 Nov 20
The purpose of the present invention is to provide a perpendicular magnetic recording medium which uses an Ru seed layer having a (002)-oriented hcp structure, and has a magnetic recording layer including a (001)-oriented L10 ordered alloy suitable to perpendicular magnetic recording.
Shinji Uchida, Hitoshi Nakata, Tomohiro Moriya, Akira Furuta, Takehito Shimatsu
Filed: 26 Dec 17
Utility
Semiconductor device and method for manufacturing semiconductor device
23 Nov 20
A p anode layer is formed on one main surface of an n− drift layer.
Michio Nemoto, Takashi Yoshimura
Filed: 19 Mar 20
Utility
Method of manufacturing a semiconductor device in which a lifetime of carriers is controlled
23 Nov 20
A front surface element structure is formed on the front surface side of an n−-type semiconductor substrate.
Yuichi Onozawa, Hiroshi Takishita, Takashi Yoshimura
Filed: 7 Jan 20