997 patents
Page 29 of 50
Utility
Semiconductor apparatus
23 Mar 21
A semiconductor apparatus is provided, including: a housing; a heat-dissipation substrate; a first semiconductor chip provided on the heat-dissipation substrate; a temperature detecting unit provided on the housing; a first thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit; and a second thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit, the second thermoelectric member being made of a different material than the first thermoelectric member.
Nobuhiro Higashi
Filed: 28 Feb 19
Utility
Semiconductor device
23 Mar 21
The reverse recovery withstand capability of a semiconductor device is improved.
Tatsuya Naito
Filed: 7 Mar 19
Utility
Semiconductor device
23 Mar 21
To improve the turn-off withstand capability of a semiconductor device.
Tatsuya Naito
Filed: 7 Mar 19
Utility
Semiconductor device
23 Mar 21
A semiconductor device includes a semiconductor element on an insulated circuit board, a housing having a side wall surrounding the circuit board, a lead terminal including a lead part and a terminal part extending orthogonal to the lead part, the terminal part having a base portion adjacent to the lead part and being embedded in the side wall, the remaining portion of the terminal part being exposed from the side wall and being connected to the semiconductor element via a wiring member, and a sealing resin provided in the housing.
Daisuke Inoue
Filed: 31 Oct 19
Utility
Manufacturing method of semiconductor device
16 Mar 21
Provided is a semiconductor device including: a semiconductor substrate doped with an impurity; a front-surface-side electrode provided at a side of a front surface of the semiconductor substrate; and a back-surface-side electrode provided at a side of a back surface of the semiconductor substrate; wherein the semiconductor substrate includes: a peak region arranged at the side of the back surface of the semiconductor substrate and having one or more peaks of an impurity concentration; a high concentration region arranged closer to the front surface than the peak region and having an impurity concentration more gently sloped than the one or more peaks; and a low concentration region arranged closer to the front surface than the high concentration region and having an impurity concentration lower than the impurity concentration of the high concentration region and a substrate concentration of the semiconductor substrate.
Hiroshi Takishita, Takashi Yoshimura, Takahiro Tamura, Yuichi Onozawa, Akio Yamano
Filed: 23 Oct 19
Utility
Semiconductor device having semiconductor regions with an impurity concentration distribution which decreases from a respective peak toward different semiconductor layers
16 Mar 21
In a surface layer of a rear surface of the semiconductor substrate, an n+-type cathode region and a p-type cathode region are each selectively provided.
Masaki Tamura, Hitoshi Abe, Takeshi Fujii
Filed: 26 Oct 18
Utility
Transmission apparatus and receiving apparatus
16 Mar 21
To detect an error in pulse width in a communication scheme that identifies a start position of a message or expresses a data value using a pulse width of a pulse included in the message, provided is a receiving apparatus including a receiving section that receives a message including a synchronization pulse having a predetermined pulse width and a first data pulse having a pulse width corresponding to a value of first data; and an error detecting section that detects an error in response to the number of non-synchronization pulses that are consecutive after the synchronization pulse being outside a predetermined number range.
Keiichi Itou
Filed: 15 Apr 19
Utility
Semiconductor module and power conversion apparatus
9 Mar 21
A semiconductor module includes a base plate for dissipating heat and a body having a bottom surface facing the base plate, a top surface opposite the bottom surface, and side surfaces between the bottom and top surfaces, wherein a first main electrode through which a first main current flows faces a first side surface among the side surfaces, and a second main electrode through which a second main current flows faces a second side surface opposite the first side surface.
Yuji Sano
Filed: 25 Mar 19
Utility
Semiconductor device and method of manufacturing semiconductor device
9 Mar 21
A semiconductor layer may be subjected to etching to form a trench therein.
Takeyoshi Nishimura
Filed: 4 Mar 20
Utility
Drive device for semiconductor element
9 Mar 21
A drive device for a semiconductor element includes a drive circuit receiving from outside a pulsed drive signal for driving ON/OFF of the semiconductor element; and a protection circuit receiving a signal representing a chip temperature of the semiconductor element and, when the detected chip temperature exceeds an overheating threshold temperature, controlling operation of the drive circuit so as to adjust a drive control voltage that is provided to the semiconductor element; and a drive information output circuit externally outputting drive information corresponding to the adjusted drive control voltage that is provided to the semiconductor element by the drive circuit.
Kenshi Terashima
Filed: 12 Mar 18
Utility
Driving apparatus and switching apparatus
9 Mar 21
A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.
Kunio Matsubara, Hirotoshi Kaneda
Filed: 6 Dec 19
Utility
Semiconductor module and method for manufacturing semiconductor module
2 Mar 21
A semiconductor module includes a metal plate; a solder applied on the metal plate; a component-to-be-bonded mounted on the solder; and a linear guide portion delineated along a circumference of the component-to-be-bonded on a top surface of the metal plate, and including a metal surface having greater surface roughness than a peripheral region.
Yuhei Nishida
Filed: 22 Mar 19
Utility
Insulated gate semiconductor device with injuction supression structure and method of manufacturing same
2 Mar 21
Provided are: injection control regions of a second conductivity type provided on a charge transport region of a first conductivity type; main electrode regions of the first conductivity type provided on the injection control regions; insulated gate electrode structures going through the main electrode region and the injection control regions in the depth direction; an injection suppression region going through the main electrode regions and the injection control regions in the depth direction so as to form a pn junction in a path leading to the charge transport region, the injection suppression region including a semiconductor material with a narrower bandgap than a material of the charge transport region; and a contact protection region of the second conductivity type contacting the bottom surface of the injection suppression region.
Akimasa Kinoshita
Filed: 6 Feb 19
Utility
Control circuit for AC/DC converter
2 Mar 21
A control circuit for an AC/DC converter includes an AC detection circuit that periodically determines from a change in the AC input voltage whether AC voltage is being input and, upon determining that AC voltage is being input, outputs an AC detection signal that takes a HIGH level only for a prescribed duration; and an enable signal conversion circuit that filters the AC detection signal to generate the enable signal that is in a HIGH state when the AC detection signal is in the HIGH level and that becomes the LOW state after a prescribed time has passed since the AC detection signal becomes a LOW level unless the AC detection signal rises to the HIGH level again, thereby producing the enable signal that is more responsive.
Yuta Endo, Kazuhiro Kawamura
Filed: 6 Feb 18
Utility
Sensor device having adhesive between sensor portion and casing portion
23 Feb 21
A sensor device including: a sensor portion; a casing portion housing the sensor portion; an elastic portion that is provided in contact with the casing portion between the sensor portion and the casing portion and has a material having smaller elastic modulus than elastic modulus of the casing portion; and an adhesive that is provided between the sensor portion and the casing portion is provided.
Eiji Hosokawa
Filed: 25 Jan 19
Utility
Semiconductor device including trenches formed in transistor or diode portions
23 Feb 21
A semiconductor device that allows easy hole extraction is provided.
Tatsuya Naito
Filed: 21 Feb 18
Utility
Semiconductor device and method for producing semiconductor device
23 Feb 21
Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation.
Takashi Yoshimura, Masayuki Miyazaki, Hiroshi Takishita, Hidenao Kuribayashi
Filed: 3 Jun 19
Utility
Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
23 Feb 21
A p-type base region is configured by a p−-type channel region and a p-type high-impurity-concentration region adjacent to the channel region in a horizontal direction.
Makoto Utsumi, Tsuyoshi Araoka
Filed: 22 Oct 19
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
23 Feb 21
A silicon carbide semiconductor device has a rectangle-shaped active region in which a main current flows, and a termination region surrounding the active region in a plan view.
Yasuyuki Hoshi, Yuichi Hashizume, Keishirou Kumada
Filed: 26 Sep 19
Utility
Power supply for output of various specifications
23 Feb 21
There is provided a power supply that includes a primary block having an inverter circuit and a secondary block connected to the primary block, the secondary block having a transformer with a primary side connected to the inverter circuit and having a rectifier that is connected to a secondary side of the transformer and outputs DC power.
Ryuji Yamada
Filed: 29 Oct 17