997 patents
Page 31 of 50
Utility
Semiconductor apparatus and manufacturing method of semiconductor apparatus
26 Jan 21
A semiconductor apparatus 1 includes a circuit substrate 3 having a circuit pattern layer 3c on an upper principal surface, semiconductor elements 4a and 4b mounted on the circuit pattern layer 3c of the circuit substrate 3, a printed substrate 6 arranged apart from the circuit substrate 3 on the upper principal surface side of the circuit substrate 3, a housing 2 mold-sealing the upper principal surface side of the circuit substrate 3, and a block 10 provided sandwiching at least part of the housing 2 and being opposite to the circuit substrate 3, the block having a linear expansion coefficient smaller than that of the housing 2.
Yoko Nakamura, Norihiro Nashida, Yuichiro Hinata
Filed: 30 Aug 17
Utility
Semiconductor module, electric vehicle, and power control unit
26 Jan 21
A semiconductor module is provided to include: a plurality of semiconductor chips; a lead frame that is connected to the plurality of semiconductor chips; and a main terminal that is connected to the lead frame, wherein the lead frame has an electrical connection portion that electrically connects the plurality of semiconductor chips to the main terminal, and a heat dissipation portion that is provided to extend from the electrical connection portion.
Koichiro Iyama
Filed: 24 Jan 19
Utility
Semiconductor device
26 Jan 21
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth.
Yusuke Kobayashi, Shinsuke Harada, Takahito Kojima
Filed: 23 Oct 18
Utility
Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device
26 Jan 21
A manufacturing method of a vertical GaN-based semiconductor device having: a GaN-based semiconductor substrate; a GaN-based semiconductor layer including a drift region having doping concentration of an n type impurity, which is lower than that of the GaN-based semiconductor substrate, and is provided on the GaN-based semiconductor substrate; and MIS structure having the GaN-based semiconductor layer, an insulating film contacting the GaN-based semiconductor layer, and a conductive portion contacting the insulating film, the method includes: implanting an n type dopant in a back surface of the GaN-based semiconductor substrate after forming of the MIS structure, and annealing the GaN-based semiconductor substrate after the implanting of the n type dopant.
Shinya Takashima, Katsunori Ueno, Masaharu Edo
Filed: 1 Nov 18
Utility
Semiconductor device
26 Jan 21
A semiconductor device including: an output element including a power supply side electrode region and an output side electrode region and configured to flow main current between the power supply side electrode region and the output side electrode region; an internal circuit including a sensor circuit configured to detect an abnormality; and a package in which the output element and the internal circuit are built, the package including a primary lead terminal and a secondary lead terminal, wherein the primary lead terminal electrically draws out an intermediate node in wiring of a primary detection circuit constituting the sensor circuit to an outside, the secondary lead terminal electrically draws out a terminal of a secondary detection circuit separable from the primary detection circuit to the outside, and depending on a connection state between the primary and secondary lead terminals, a reference value for detecting the abnormality can be changed.
Hideki Iwata
Filed: 3 Aug 20
Utility
Wire bonding apparatus
19 Jan 21
Provided is a wire bonding apparatus for electrically connecting an electrode and an aluminum alloy wire to each other by wire bonding.
Fumihiko Momose, Takashi Saito, Kazumasa Kido, Yoshitaka Nishimura
Filed: 9 Mar 15
Utility
Silicon carbide MOSFET inverter circuit
19 Jan 21
An inverter circuit is connected serially with a first silicon carbide MOSFET and a second silicon carbide MOSFET.
Takumi Fujimoto
Filed: 24 Oct 18
Utility
Semiconductor device
19 Jan 21
A semiconductor device is provided comprising an active portion and a terminating structure.
Daisuke Ozaki, Ryouichi Kawano
Filed: 21 Dec 18
Utility
Semiconductor apparatus
19 Jan 21
In order to prevent breakage of a nut holder that holds a nut, a semiconductor apparatus includes a main terminal connected to an external conductor by a screw, a nut into which a tip of the screw is screwed, and a nut holder.
Takahiro Mitsumoto
Filed: 1 Jul 19
Utility
Power factor improvement circuit and semiconductor apparatus
19 Jan 21
A power factor improvement circuit that performs, on the basis of an output voltage when a switching power-supply apparatus is in a light-load state or a no-load state, a burst operation for switching between states of the switching operation of a switching element includes: a first circuit that outputs a first voltage that corresponds to the error between a reference voltage and a voltage obtained by dividing the output voltage; and a clamp circuit that, while the burst operation is performed, clamps the lower limit of the first voltage, which decreases when the switching operation of the switching element is disabled, at a lower-limit voltage higher than the ground voltage of the power factor improvement circuit and clamps the upper limit of the first voltage, which increases when the switching operation of the switching element is performed, at an upper-limit voltage.
Nobuyuki Masuda, Takato Sugawara
Filed: 2 Mar 20
Utility
Drive circuit
19 Jan 21
A drive circuit of a power device, including a set-side level shift circuit that receives a set signal and generates a level-shifted set signal, a reset-side level shift circuit that receives a reset signal and generates a level-shifted reset signal, a control circuit that is connected to the set-side level shift circuit and the reset-side level shift circuit, and that outputs a drive signal, a level of the drive signal changing between a first logic level for turning off the power device based on the level-shifted reset signal and a second logic level for turning on the power device based on the level-shifted set signal, and an ensuring circuit that ensures, based on the drive signal, that the control circuit controls to turn on the power device responsive to the level-shifted set signal, and to turn off the power device responsive to the level-shifted reset signal.
Masashi Akahane
Filed: 28 Jan 20
Utility
Switching power supply apparatus control method and control circuit of switching power supply apparatus
12 Jan 21
First, it is assumed that a low-side switching element is turned off.
Jian Chen
Filed: 29 Nov 19
Utility
Semiconductor device manufacturing method and semiconductor device
12 Jan 21
To provide a semiconductor device 100 including a semiconductor element with a less warped chip.
Shun Ikenouchi
Filed: 28 Aug 18
Utility
Pressure sensor device
12 Jan 21
A pressure sensor device including: an absolute pressure sensor unit; a sensor case to accommodate the absolute pressure sensor unit; and an adhesive provided between the absolute pressure sensor unit and the sensor case to fix the absolute pressure sensor unit and the sensor case together, is provided.
Shuntaro Miyake, Shojiro Kurimata
Filed: 27 Aug 18
Utility
Terminal structure and semiconductor module
4 Jan 21
A terminal structure of a terminal used for connecting a semiconductor device included in a semiconductor module to an outside element, including plate-shaped portions at both ends, and a bent portion positioned between the plate-shaped portions.
Takanori Sugiyama
Filed: 26 Mar 19
Utility
Semiconductor device and method of manufacturing semiconductor device
4 Jan 21
A silicon carbide semiconductor device has an n-type drift layer provided on a front surface of an n+-type silicon carbide substrate.
Tsuyoshi Araoka, Yusuke Kobayashi
Filed: 24 Jul 17
Utility
Silicon carbide semiconductor device
4 Jan 21
A silicon carbide semiconductor device, including a semiconductor substrate having first and second epitaxial layers.
Takashi Tsuji, Akimasa Kinoshita
Filed: 18 Apr 19
Utility
Semiconductor device
4 Jan 21
There is provided a semiconductor device including a transistor portion and a diode portion.
Toshiyuki Matsui
Filed: 20 Jan 19
Utility
Method of manufacturing semiconductor device and semiconductor device
4 Jan 21
In a method of manufacturing a semiconductor device, a gate insulating film is formed at a first surface of a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type is formed at the first surface; a gate electrode is formed on the gate insulating film; the gate insulating film is selectively removed; a thermal oxide film is formed at a surface of the second semiconductor layer; a third semiconductor layer of the first conductivity type is selectively formed at the surface of the second semiconductor layer; an interlayer insulating film is formed on the thermal oxide film; a contact hole is selectively formed to expose the third semiconductor layer; a barrier metal is formed in the contact hole; and a metal plug is embedded in the contact hole on barrier metal by a CVD method that uses a metal halide.
Makoto Shimosawa
Filed: 30 Jun 19
Utility
Semiconductor device and method of manufacturing semiconductor device
4 Jan 21
A semiconductor device has an active region through which current flows and a termination structure region.
Ryo Maeta
Filed: 23 Oct 18