997 patents
Page 33 of 50
Utility
Semiconductor device
23 Nov 20
A semiconductor device is provided.
Tatsuya Naito
Filed: 20 Dec 18
Utility
Semiconductor device
23 Nov 20
A semiconductor device is provided, including: a semiconductor substrate; a first-conductivity-type drift region provided in the semiconductor substrate; a gate trench portion extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate; a mesa portion provided in contact with the gate trench portion in an array direction orthogonal to the extending direction; a first-conductivity-type accumulation region provided above the drift region and in contact with the gate trench portion, and having a higher doping concentration than the drift region; a second-conductivity-type base region provided above the accumulation region and in contact with the gate trench portion; and a second-conductivity-type floating region provided below the accumulation region and in contact with the gate trench portion, and provided in a part of the mesa portion in the array direction.
Tatsuya Naito
Filed: 2 Dec 18
Utility
Semiconductor device and manufacturing method of semiconductor device
23 Nov 20
There is provided a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity type provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a base region of a second conductivity type provided between the emitter region and the drift region inside the semiconductor substrate; a first accumulation region of the first conductivity type provided between the base region and the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a plurality of trench portions provided to pass through the emitter region, the base region and first accumulation region from an upper surface of the semiconductor substrate, and provided with a conductive portion inside; and a capacitance addition portion provided below the first accumulation region to add a gate-collector capacitance thereto.
Tatsuya Naito
Filed: 24 Jul 18
Utility
Semiconductor device having semiconductor regions of different conductivity types provided at a predetermined interval along a first direction
23 Nov 20
Among trenches disposed in a striped-shape parallel to a front surface of a semiconductor substrate, a gate electrode at a gate potential is provided in a gate trench, via a gate insulating film; and in a dummy trench, a dummy gate electrode at an emitter electric potential is provided, via a dummy gate insulating film.
Hitoshi Abe, Takeshi Fujii, Tomoyuki Obata
Filed: 25 Oct 18
Utility
Reset circuit
23 Nov 20
A reset circuit includes: an output circuit that outputs a reset release signal for releasing reset of a reset target circuit that is to be applied with a power supply voltage, when a first voltage that rises with a rise in the power supply voltage reaches a first reference voltage that rises with a rise in the power supply voltage until the first reference voltage reaches a target level; and an inhibit circuit that inhibits the reset release signal from being output to the reset target circuit until the power supply voltage reaches a third level, the third level being higher than a first level at a time when the first reference voltage exceeds the first voltage, the third level being lower than a second level at a time when the first voltage reaches the target level.
Tetsuya Kawashima
Filed: 25 Nov 19
Utility
Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium
16 Nov 20
Plural sessions of proton irradiation are performed by differing ranges from a substrate rear surface side.
Kouji Mukai, Souichi Yoshida
Filed: 24 Jul 19
Utility
Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor material
16 Nov 20
A semiconductor device has an active region through which current flows and an edge termination structure region arranged outside the active region.
Yusuke Kobayashi, Yasuhiko Oonishi, Masanobu Iwaya
Filed: 25 Jul 17
Utility
Silicon carbide semiconductor device and silicon carbide semiconductor circuit device
16 Nov 20
In a MOS silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of the source electrode is applied to the gate electrode is limited to less than 2×10−11 A.
Keiji Okumura, Akimasa Kinoshita
Filed: 22 Jan 19
Utility
Semiconductor device and manufacturing method of semiconductor device
16 Nov 20
There is provided a semiconductor device comprising: a semiconductor substrate; an emitter region of a first conductivity type provided inside the semiconductor substrate; a base region of a second conductivity type provided below the emitter region inside the semiconductor substrate; an accumulation region of the first conductivity type provided below the base region inside the semiconductor substrate, and containing hydrogen as an impurity; and a trench portion provided to pass through the emitter region, the base region and the accumulation region from an upper surface of the semiconductor substrate.
Tatsuya Naito
Filed: 25 Jul 18
Utility
Semiconductor device
16 Nov 20
A semiconductor device having a semiconductor substrate is provided, the semiconductor substrate including: two trench sections extending in a predetermined direction; a mesa section provided between the two trench sections; and a drift layer, the mesa section including: an emitter region; a contact region; and multiple accumulation layers provided side by side in a depth direction below the emitter region and the contact region, and at least one accumulation layer among the multiple accumulation layers provided below at least a part of the emitter region, but not provided below a partial region of the contact region.
Tatsuya Naito
Filed: 27 Nov 18
Utility
Semiconductor device and method of manufacturing same
16 Nov 20
A semiconductor device includes a current spreading region of the first conductivity type provided on a drift layer and having a higher impurity density than the drift layer; a base region of a second conductivity type provided on the current spreading region; a base contact region of the second conductivity type provided in a top part of the base region and having a higher impurity density than the base region; and an electrode contact region of the first conductivity type provided in a top part of the base region that is laterally in contact with the base contact region, the electrode contact region having a higher impurity density than the drift layer, wherein a density of a second conductivity type impurity element in the base contact region is at least two times as much as a density of a first conductivity type impurity element in the electrode contact region.
Keiji Okumura
Filed: 5 Nov 18
Utility
Power module with high-side and low-side programmable circuit
16 Nov 20
A power module including first and second switching elements connected in a half-bridge configuration, an integrated circuit including high-side and low-side circuits that respectively drive the first and second switching elements, high-side and low-side programmable circuits that are respectively configured to implement first and second logic functions or parameters to be used by the high-side and low-side circuits.
Masashi Akahane
Filed: 21 Apr 20
Utility
Power conversion apparatus having semiconductor modules each including series-connected semiconductor switches and output terminal coupled to node connecting semiconductor switches, and output bar coupling output terminals of semiconductor modules
16 Nov 20
A power conversion apparatus includes N semiconductor modules respectively including a switch part including first and second semiconductor switches coupled in series, and an output terminal coupled to a node that connects the first and second semiconductor switches, where N is an integer greater than or equal to 3, wherein the N semiconductor modules are arranged so that the output terminals thereof are adjacent to each other.
Hong-Fei Lu
Filed: 21 Jan 19
Utility
Data communication system, data communication apparatus, and sensor apparatus
16 Nov 20
A data communication system, including master-side and slave-side data communication apparatuses configured to perform bidirectional communication with each other via a single-wire communication line.
Masashi Akahane
Filed: 12 Apr 20
Utility
Method of manufacturing silicon carbide semiconductor device
9 Nov 20
In a vertical MOSFET of a trench gate structure, a high-concentration implantation region is provided in a p-type base region formed from a p-type silicon carbide layer formed by epitaxial growth, so as to include a portion in which a channel is formed.
Setsuko Wakimoto, Masanobu Iwaya
Filed: 17 Jun 19
Utility
Semiconductor device
9 Nov 20
A semiconductor device includes a semiconductor substrate, an emitter region, a base region and multiple accumulation areas, and an upper accumulation area in the multiple accumulation areas is in direct contact with a gate trench section and a dummy trench section, in an arrangement direction that is orthogonal to a depth direction and an extending direction, a lower accumulation area furthest from the upper surface of the semiconductor substrate in the multiple accumulation areas has: a gate vicinity area closer to the gate trench section than the dummy trench section in the arrangement direction; and a dummy vicinity area closer to the dummy trench section than the gate trench section in the arrangement direction, and having a doping concentration of the first conductivity type lower than that of the gate vicinity area.
Tatsuya Naito
Filed: 22 Oct 18
Utility
Semiconductor device
9 Nov 20
In an inactive region of an active region, a gate pad, a gate poly-silicon layer, and a gate finger are provided at a front surface of a semiconductor substrate, via an insulating film.
Keiji Okumura
Filed: 22 Jul 19
Utility
Transformer
2 Nov 20
A transformer includes: a core having a shaft; primary windings; and secondary windings around the shaft alternately with the primary windings.
Qichen Wang, Satoru Fujita
Filed: 23 Aug 18
Utility
Semiconductor device and method of manufacturing semiconductor device
2 Nov 20
The present invention includes: a plurality of semiconductor modules on a metal base (conductor base); a first insulating bus bar and a second insulating bus bar connecting the semiconductor modules; a box-like insulating resin frame around the semiconductor modules; a first insulating layer that seals the semiconductor modules, the first insulating layer having an upper surface at a position that is lower than upper ends of terminals extending from an insulating circuit substrate of the semiconductor module inside the insulating resin frame; and second insulating layers on the first insulating layer inside the insulating resin frame, the upper ends of the terminals being buried inside the second insulating layers.
Katsumi Taniguchi
Filed: 4 Apr 19
Utility
Semiconductor integrated circuit
2 Nov 20
A semiconductor integrated circuit includes: a first well region of a first conductivity type; a second well region of a second conductivity type provided in an upper portion of the first well region; a first current suppression layer of a second conductivity type being provided to be separated from the first well region in a lower portion of a base-body of the second conductivity type directly under the first well region and having an impurity concentration higher than that of the base-body; and a second current suppression layer of the first conductivity type provided under the first current suppression layer so as to be exposed from a bottom surface of the base-body.
Hiroshi Kanno, Masaharu Yamaji, Hitoshi Sumida
Filed: 23 Jul 18