997 patents
Page 36 of 50
Utility
Device
31 Aug 20
There is provided a device that includes a core, a first winding portion that turns around an outer circumference of the core, a plurality of sub-substrates each having a pattern of a second winding turning around the outer circumference of the core, and a main substrate on which a plurality of sub-substrates are mounted.
Satoru Fujita
Filed: 24 Oct 17
Utility
Semiconductor device
31 Aug 20
A semiconductor device including a semiconductor substrate and a plurality of trench structures formed on the semiconductor substrate.
Akio Yamano, Misaki Takahashi
Filed: 29 Jan 18
Utility
Semiconductor device
31 Aug 20
A first p+-type region in contact with a bottom of a gate trench is disposed in a striped shape extending along a first direction that is orthogonal to a second direction along which the gate trench extends in a striped shape, as viewed from a front surface of a silicon carbide substrate.
Yusuke Kobayashi, Naoyuki Ohse
Filed: 24 Feb 19
Utility
Uninterruptible power supply
31 Aug 20
An uninterruptible power supply includes an AC power source that supplies AC power to a load and includes a main AC input power source, an electromagnetic contactor provided between the AC power source and the load and excited to be switched on or off, and a first switch that switches between a first AC voltage of the main AC input power source and a second AC voltage capable of being supplied independently of the first AC voltage so as to excite the electromagnetic contactor.
Hiroyuki Kobayashi, Hiroki Muratsu
Filed: 24 Jun 18
Utility
Gate drive circuit
31 Aug 20
A gate drive circuit includes a signal generation unit configured to generate a first gate drive signal, a signal isolation unit configured to produce, at an output side thereof in response to the first gate drive signal, a second gate drive signal electrically isolated from the signal generation unit, an output stage device configured to receive the second gate drive signal at an input side thereof and to produce a third gate drive signal at an output side thereof in response to the second gate drive signal, a first path connecting the output side of the signal isolation unit and the input side of the output stage device; and a second path connecting the output side of the signal isolation unit and the output side of the output stage device.
Sho Takano, Hidetoshi Umida
Filed: 22 Jan 19
Utility
Semiconductor integrated circuit
31 Aug 20
A semiconductor integrated circuit includes a level shifter formed in a portion of a high-voltage junction termination structure and an isolation region formed surrounding the periphery of the level shifter.
Takahide Tanaka
Filed: 3 Nov 19
Utility
Method for manufacturing semiconductor device and semiconductor manufacturing apparatus used for the method
24 Aug 20
A method for manufacturing a semiconductor device includes: thermally-oxidizing a surface of a to-be-processed base made by SiC as body material to form a silicon dioxide film, by supplying gas containing oxidation agent to the surface of the to-be-processed base; exchanging ambient gas containing the oxidation agent after forming the silicon dioxide film, by decreasing a partial pressure of the oxidation agent in the ambient gas to 10 Pa or less; and after exchanging the ambient gas, lowering a temperature of the to-be-processed base.
Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Mitsuru Sometani
Filed: 26 Jul 16
Utility
Method of manufacturing semiconductor device
24 Aug 20
Laser light of a short-wavelength laser is irradiated from a rear surface of an n−-type semiconductor substrate, activating a p+-type collector region and an n+-type cathode region.
Hiroshi Takishita, Takashi Yoshimura
Filed: 18 Feb 19
Utility
Semiconductor module
24 Aug 20
Provided is a semiconductor module comprising: a semiconductor chip; a cooling portion having a refrigerant passing portion through which a refrigerant passes; and a laminated substrate having: a first metal interconnection layer; a second metal interconnection layer; and an insulation provided between the first metal interconnection layer and the second metal interconnection layer, wherein the cooling portion has: a top plate; a bottom plate; and a plurality of protruding parts which are provided on a surface of the bottom plate, and are separated from each other in a flow direction of the refrigerant, and are respectively provided continuously in a direction orthogonal to the flow direction, wherein the plurality of protruding parts are provided at a position overlapping with one end of the second metal interconnection layer and at a position overlapping with the semiconductor chip in the flow direction.
Akio Kitamura, Shinichiro Adachi, Nobuhide Arai
Filed: 27 Nov 18
Utility
Semiconductor device and method of manufacturing semiconductor device
24 Aug 20
Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.
Takahiro Tamura, Yuichi Onozawa, Takashi Yoshimura, Hiroshi Takishita, Akio Yamano
Filed: 19 Mar 19
Utility
Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductor
24 Aug 20
A silicon carbide semiconductor element includes n-type silicon carbide epitaxial layers formed on an n+-type silicon carbide semiconductor substrate, plural p base layers selectively formed in surfaces of the silicon carbide epitaxial layers, a p-type silicon carbide epitaxial layer formed in the silicon carbide epitaxial layer, and a trench penetrating at least the silicon carbide epitaxial layer.
Makoto Utsumi, Yasuhiko Oonishi, Kenji Fukuda, Shinsuke Harada, Masanobu Iwaya
Filed: 29 Oct 17
Utility
Charge apparatus to repeatedly apply a pulsed high voltage and a low voltage to charge a battery
24 Aug 20
With a conventional pulse charging method, a low voltage value for the pulse voltage is set to zero volts.
Takaharu Ohkanda, Kazuyuki Yoda, Hiroshi Takano, Ryuta Nishizuka
Filed: 28 Nov 16
Utility
Insulated gate device drive apparatus
24 Aug 20
An insulated gate device drive apparatus for driving an insulated gate device by using a charging current outputted from a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor.
Takahiro Mori, Motomitsu Iwamoto
Filed: 28 Nov 19
Utility
Electrophotographic photoconductor, method of manufacturing the same, and electrophotographic apparatus
17 Aug 20
Fengqiang Zhu, Shinjiro Suzuki, Seizo Kitagawa
Filed: 25 Jul 19
Utility
Silicon carbide semiconductor substrate, method of manufacturing a silicon carbide semiconductor device, and silicon carbide semiconductor device
17 Aug 20
An n−-type epitaxial layer is grown on a front surface of the silicon carbide substrate by a CVD method in a mixed gas atmosphere containing a source gas, a carrier gas, a doping gas, an additive gas, and a gas containing vanadium.
Takeshi Tawara, Hidekazu Tsuchida, Tetsuya Miyazawa
Filed: 29 Aug 18
Utility
Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing semiconductor device
17 Aug 20
A method for manufacturing a semiconductor device includes epitaxially growing a carrier-transport layer of a first conductivity type on a substrate of silicon carbide; irradiating the carrier-transport layer with a first light having a wavelength equal to or less than an absorption-edge wavelength of silicon carbide at a temperature of less than 400 degrees Celsius so as to expand a stacking fault originating from a basal plane dislocation which are propagated from the substrate to the carrier-transport layer; heating the carrier-transport layer in which the stacking fault has expanded so as to shrink the stacking fault, at a shrinking temperature of 400 degrees Celsius or more and 1000 degrees Celsius or less; and forming a carrier-injection region of a second conductivity type on the carrier-transport layer, the carrier-injection region injects carriers into the carrier-transport layer.
Akira Saito, Kei Nakajima
Filed: 27 Dec 18
Utility
Method of evaluating insulated-gate semiconductor device
17 Aug 20
A method of evaluating an insulated-gate semiconductor device having an insulated-gate structure including a channel formation layer made of a wide-bandgap semiconductor and a gate insulating film formed contacting the channel formation layer includes removing the gate insulating film in order to expose a surface of the channel formation layer; taking a phase image of the exposed surface of the channel formation layer using a phase mode of an atomic force microscope; evaluating a surface condition of the exposed surface of the channel formation layer by calculating an evaluation metric from phase shift values in the phase image and by determining whether the evaluation metric satisfies a prescribed condition; and determining that the insulated-gate semiconductor device is acceptable when the evaluation metric satisfied the prescribed condition.
Takayuki Hirose, Yutaka Terao, Aki Takigawa, Etsuko Tomita
Filed: 3 Dec 18
Utility
Manufacturing method of semiconductor device and semiconductor device
17 Aug 20
Provided is a manufacturing method of a semiconductor device including a vertical MOSFET having a planar gate.
Katsunori Ueno, Shinya Takashima
Filed: 25 Dec 18
Utility
Semiconductor device and manufacturing method thereof
17 Aug 20
A semiconductor device having a contact trench is provided.
Tatsuya Naito
Filed: 26 Aug 18
Utility
Magnetic recording medium having an FePtRh magnetic layer
10 Aug 20
The present invention aims at providing a magnetic recording medium that can lower a Curie temperature (Tc) of a magnetic material, without increasing an in-plane coercive force and lowering magnetic properties.
Tomohiro Moriya, Hitoshi Nakata, Takehito Shimatsu
Filed: 30 Jul 17