997 patents
Page 39 of 50
Utility
Semiconductor device
22 Jun 20
In an n-type current diffusion region, a first p+-type region underlying a bottom of a trench (gate trench) is provided.
Yusuke Kobayashi, Naoyuki Ohse, Shinsuke Harada, Manabu Takei
Filed: 3 Sep 18
Utility
Uninterruptible power supply
22 Jun 20
An uninterruptible power supply includes a main uninterruptible power supply unit including a converter, an inverter, and a battery, as well as an input transformer which is arranged between an AC power supply and the converter and transforms the AC voltage from the AC power supply.
Yasuhiro Tamai
Filed: 5 Dec 18
Utility
Power conversion circuit with a compensation circuit
22 Jun 20
In a power conversion circuit in which a grounded capacitor is connected to a main circuit that converts power through operation of a semiconductor switching device, a control IC that supplies a drive signal to the semiconductor switching device generates a cancellation voltage for canceling out a conducted emission that develops across terminals of the grounded capacitor as a result of the operation of the semiconductor switching device by using the drive signal (gate signal) to control a charge/discharge current of a compensation capacitor in a compensation circuit that is externally connected to the main circuit.
Ryuji Yamada
Filed: 6 May 19
Utility
Semiconductor device
15 Jun 20
A semiconductor device, including: a semiconductor module including a layered substrate on which a semiconductor element is mounted, and a sealing material; and a cooler provided on the semiconductor module via a thermal compound.
Yuko Nakamata
Filed: 6 Mar 19
Utility
Semiconductor device and method of manufacturing same
15 Jun 20
This semiconductor device includes: an n-type SiC drift layer; a p-type base region; an n-type source region selectively embedded in the top part of the base region; p-type base contact regions selectively embedded in the top part of the base region so as to form a first gap with the source region along the <11-20> direction; a gate electrode provided via a gate insulating film; and an n-type drain region.
Keiji Okumura
Filed: 23 Oct 18
Utility
Gas analyzing apparatus
8 Jun 20
In gas analyzing apparatuses, interference noises should be reduced.
Yu Taniguchi, Kazuhiro Koizumi, Hojun Yamauchi
Filed: 22 Oct 18
Utility
Current detection device for power semiconductor element
8 Jun 20
A current detection device for a power semiconductor element includes an operational amplifier that fixes an emitter terminal of a sense IGBT to a voltage equal to or smaller than 1 volt of a reference voltage supply, and a current-voltage converter configured to flow in a resistor a current that is greater than and proportional to a current that flows into the operational amplifier from the sense IGBT.
Akira Nakamori
Filed: 29 Jun 16
Utility
Metal-base printed circuit board
8 Jun 20
A highly thermally conductive printed circuit board prevents electrochemical migration by inhibiting elution of copper ions.
Yoshimichi Ohki, Yuichi Hirose, Genta Wada, Toshikatsu Tanaka, Kenji Okamoto
Filed: 16 Nov 16
Utility
Semiconductor test equipment
1 Jun 20
A semiconductor test equipment can conduct a burn-in test, and has a testing table capable of aligning a plurality of contact units formed of a probe card having a plurality of contact probes each corresponding to each of a plurality of semiconductor chips formed on a semiconductor wafer to contact with the semiconductor wafer, and a holding tool for holding the semiconductor wafer and the probe card in a contacted state; a voltage application circuit having connection wiring lines provided in a manner capable of parallel connection of the plurality of contact units aligned on the testing table, and a plurality of connection units to apply a testing voltage to the semiconductor wafer held on each of the plurality of contact units; and a characteristic measuring circuit for measuring characteristics of the plurality of semiconductor chips formed on the semiconductor wafer according to application of the testing voltage.
Mitsuru Yoshida
Filed: 28 Jun 18
Utility
Semiconductor device and method of manufacturing semiconductor device
1 Jun 20
A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.
Akio Yamano, Aiko Takasaki, Hiroaki Ichikawa
Filed: 2 Jun 19
Utility
Insulated-gate semiconductor device
1 Jun 20
An insulated-gate semiconductor device has a multi-channel structure with a plurality of unit-cells arranged in parallel on a semiconductor chip, wherein a main-electrode causing a main current to flow in the semiconductor chip is defined so as to be divided into an inter-electrode portion metallurgically connected to the semiconductor chip between gate electrodes of each of the unit-cells and a covering portion being continuous with the inter-electrode portion and provided on the gate electrode of each of the unit-cells through an interlayer insulating film, wherein an area ratio of the inter-electrode portion to the covering portion of the main-electrode exposed to an opening cut in a protective film covering the semiconductor chip is larger than an area ratio of the inter-electrode portion to the covering portion of the main-electrode located under the protective film.
Shigemi Miyazawa
Filed: 22 Jan 19
Utility
Insulated-gate semiconductor device and method of manufacturing the same
1 Jun 20
An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.
Keiji Okumura
Filed: 22 Oct 19
Utility
Semiconductor device
1 Jun 20
A current limiting resistor opposes a p-type anode region of a bootstrap diode in a depth direction, across an insulating film.
Takeyoshi Nishimura
Filed: 27 Feb 19
Utility
Ice making device
25 May 20
An ice making device includes: an ice making part in which an evaporator is incorporated; a refrigerating circuit for ice making including a compressor, a condenser, an electronic expansion valve, and the evaporator, the refrigerating circuit being configured to circulate a refrigerant through the compressor, the condenser, the electronic expansion valve, and the evaporator in this order to produce ice in the ice making part; and a controller configured to increase a circulation amount of the refrigerant in the refrigerating circuit and then reduce the circulation amount in accordance with reduction in a cooling load in the ice making part when receiving an ice making command, and adjust the circulation amount such that a degree of superheat is equal to or lower than 2° C.
Tomoya Miyakoshi, Nobutoshi Migishima, Hajime Erikawa
Filed: 25 Feb 18
Utility
Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
25 May 20
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth.
Yusuke Kobayashi, Naoyuki Ohse, Shinsuke Harada, Takahito Kojima
Filed: 29 May 18
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
25 May 20
On a front surface of an n+-type starting substrate containing silicon carbide, a pin diode is configured having silicon carbide layers constituting an n+-type buffer layer, an n−-type drift layer, and a p+-type anode layer sequentially formed by epitaxial growth.
Takeshi Tawara, Hidekazu Tsuchida, Koichi Murata
Filed: 17 Jan 19
Utility
Product storage device and automatic vending machine
18 May 20
A product storage device includes: a main gate that is swingably provided to advance and move away from a product storage column, that advances to an advanced position, and that allows a downstream-most product to be taken out; a sub-gate that is swingably provided in association with the main gate; a sliding member that regulates the main gate from moving away and retracting from the product storage column; and a lever that allows the sliding member to be present at a regulation position, that switches to a regulation posture which regulates the sliding member from returning to the regulation position, and that then, when the main gate moves away from the product storage column in response to a take-out operation, switches to a standby posture when the main gate advances to the product storage column to allow the sliding member to return to the regulation position.
Norio Nakajima, Hajime Erikawa, Katsuhiko Fukuda, Michihiko Makino, Takuya Sakatoku, Takuma Kakiuchi
Filed: 25 Dec 17
Utility
Article dispensing apparatus
18 May 20
An article dispensing apparatus includes: one article discharging apparatus; and another article discharging apparatus, the one article discharging apparatus and the other article discharging apparatus being capable of being combined in a back-to-back manner.
Shirou Takeuchi, Takanori Suzuki
Filed: 21 May 17
Utility
Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method
18 May 20
An impurity-doping apparatus is provided with: a supporting plate which supports a semiconductor substrate; a wall-like block disposed above the supporting plate floating away from the semiconductor substrate, the wall-like block implements a recess inside so as to establish a space for a solution region containing impurity elements, the solution region is localized on an upper surface of the semiconductor substrate, the upper surface being opposite to an bottom surface facing to the supporting plate; and a laser optical system, configured to irradiate a laser beam onto the upper surface of the semiconductor substrate, through the solution region surrounded by the wall-like block, wherein the impurity elements are doped into a part of the semiconductor substrate by irradiation of the laser beam.
Kenichi Iguchi, Haruo Nakazawa, Masaaki Ogino
Filed: 5 Jun 16
Utility
Semiconductor device including a warped printed circuit board disposed in a case and method of manufacturing same
18 May 20
In a semiconductor device, when a printed circuit board is pressed against a bottom part of a case with an adhesive interposed therebetween, the back surface of the printed circuit board is supported by projections formed on the bottom part.
Tomofumi Oose
Filed: 27 Feb 18