997 patents
Page 40 of 50
Utility
Semiconductor module including pressure contact adjustment screws
18 May 20
A pressure contact-type semiconductor module includes a plurality of semiconductor units disposed side-by-side, each of the semiconductor units including: a semiconductor device substrate; a first electrode formed below the semiconductor device substrate, a second electrode formed above the semiconductor device substrate, an electrode plate electrically connected to the second electrode; and a pressure contact adjustment member screwed into the electrode plate, the pressure contact adjustment member having a top surface as a pressure contact-receiving surface to which a lead-out electrode plate that is common to the plurality of semiconductor units is to be pressure-contacted, levels of the respective top surfaces of the pressure contact adjustment members in the plurality of semiconductor units being adjustable to match a reference pressure contact plane so that contact pressures in the respective top surfaces applied by the lead-out electrode plate are substantially the same among the semiconductor units.
Yuji Iizuka
Filed: 2 Nov 17
Utility
Semiconductor device with an insulated-gate bipolar transistor region and a diode region
18 May 20
On a front surface side of an n− semiconductor substrate, an emitter electrode and trench gates each including a p base layer, a trench, a gate oxide film and a gate electrode are provided in an IGBT region and a FWD region.
Souichi Yoshida, Masaki Tamura, Kenji Kouno, Hiromitsu Tanabe
Filed: 23 Oct 17
Utility
Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
18 May 20
A silicon carbide semiconductor device includes a semiconductor substrate of a first conductivity type; an active region in which a main current flows provided on the semiconductor substrate; a termination region disposed outside of the active region and in which a voltage withstanding structure is formed; and a damaged region disposed outside the termination region and in which crystallinity is impaired, the damaged region being exposed at a cut surface that is formed when singulation is performed.
Yasuyuki Hoshi, Yuichi Hashizume, Keishirou Kumada
Filed: 27 Jun 18
Utility
Semiconductor integrated circuit device
18 May 20
A p−-type isolation region is provided at a part between a p-type ground region and a circuit region (a high potential region and an intermediate potential region) in an n-type well region.
Masaharu Yamaji
Filed: 20 Sep 18
Utility
Core-shell type catalyst and gas sensor including the catalyst
11 May 20
A core-shell structure (a diameter is about 5 nm) is located on an Al2O3 catalyst support.
Naoyoshi Murata, Yukari Shibuta, Takuya Suzuki, Makoto Okamura
Filed: 8 Mar 17
Utility
Semiconductor device and method for producing semiconductor device
11 May 20
Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer.
Hiroshi Takishita, Takashi Yoshimura, Masayuki Miyazaki, Hidenao Kuribayashi
Filed: 3 Feb 19
Utility
Semiconductor device having a trench structure
11 May 20
In a semiconductor device having a first p+-type base region, a second p+-type base region, a high-concentration n-type region selectively formed in an n-type silicon carbide epitaxial layer on an n+-type silicon carbide substrate; a p-type base layer formed on the n-type silicon carbide epitaxial layer; an n+-type source region and a p++-type contact region selectively formed in a surface layer of the p-type base layer; and a trench formed penetrating the p-type base layer and shallower than the second p+-type base region, in at least a part of the first p+-type base region, a region is shallower than the second p+-type base region as viewed from an element front surface side.
Naoyuki Ohse, Yusuke Kobayashi, Shinsuke Harada, Yasuhiko Oonishi
Filed: 25 Dec 17
Utility
Semiconductor device
11 May 20
A semiconductor device includes: a semiconductor substrate having a first conductivity-type drift region; a transistor portion; and a diode portion, wherein the transistor portion and the diode portion each have: a second conductivity-type base region; a plurality of trench portions penetrating the base region and having conductive portions provided therein; and a mesa portion sandwiched by trench portions, the transistor portion has one or more first conductivity-type accumulation regions that have doping concentrations higher than that of the drift region, the diode portion has one or more first conductivity-type high concentration regions that have doping concentrations higher than that of the drift region, and an integrated concentration of the doping concentrations of the accumulation regions is higher than an integrated concentration of the doping concentrations of the one or more high concentration regions of the mesa portion of the diode portion.
Tatsuya Naito
Filed: 31 Oct 17
Utility
Semiconductor device
11 May 20
A semiconductor device including: a semiconductor substrate; a drift region of first conductivity type that is formed in the semiconductor substrate; an accumulation region of first conductivity type that is formed above the drift region and has higher concentration than concentration of the drift region; a base region of second conductivity type that is formed above the accumulation region; and a gate trench portion that is formed extending from an upper surface of the semiconductor substrate to the drift region, passing through the base region and the accumulation region, wherein a maximum value of doping concentration of the accumulation region is greater than a maximum value of doping concentration of the base region will be provided.
Yosuke Sakurai, Yuichi Onozawa
Filed: 21 Jun 18
Utility
Method of manufacturing physical quantity sensor device and physical quantity sensor device
11 May 20
A first connector pin to a third connector pin have a substantially L-shaped cross-sectional shape formed by a horizontal part embedded in the top of an inner housing part by resin molding and a vertical part continuous with and protruding upwardly orthogonal to the horizontal part.
Fumiya Ueno, Kimihiro Ashino
Filed: 28 Dec 17
Utility
Inverter that adjusts voltage command values and control method of inverter
11 May 20
A control method of an inverter for outputting polyphase alternate-current electrical power is provided.
Akio Toba, Akihiro Odaka, Hidetoshi Umida
Filed: 4 Nov 18
Utility
Money processing device
4 May 20
A money processing device includes a storage unit that stores money, a quantity measurement unit that measures a quantity of the money stored in the storage unit during examination processing, and a control unit that performs control of calculating a remaining time or a degree of progress of the examination processing and notifying the calculated remaining time or degree of progress of the examination processing.
Shoichi Morinobu, Yuta Miyasaka, Atsushi Ikemoto
Filed: 26 Aug 18
Utility
Coin processing apparatus
4 May 20
A coin processing apparatus configured to: cause a coin output conveying unit to collectively convey coins taken out for each denomination from a plurality of coin containers where the coins are housed in the respective coin containers for each denomination; and dispense the conveyed coins from a coin output port through a coin output shoot unit, the coin processing apparatus includes: a coin stay detecting sensor configured to detect a coin stay on a shoot face of the coin output shoot unit; a reporting unit configured to perform report output for abnormality; and a controller configured to cause the reporting unit to perform report output for coin stay abnormality in the coin output shoot unit when the coin stay detecting sensor detects the coin stay.
Nobuyuki Niizuma, Tomohiko Kimura, Yoshimasa Inoue
Filed: 24 Jan 17
Utility
Semiconductor device
4 May 20
Provided is a semiconductor device capable of self-repairing cracks or peels occurring in sealing materials.
Yuji Takematsu, Kenji Okamoto
Filed: 29 Jun 16
Utility
Semiconductor device
4 May 20
A semiconductor device is provided, the semiconductor device including: a semiconductor substrate having a first-conductivity-type drift region; one or more transistor portions provided in the semiconductor substrate; and one or more diode portions provided in the semiconductor substrate, wherein both the transistor portions and the diode portions have trench portions that lie from a top surface of the semiconductor substrate to the drift region and include conductive portions, and in a top view of the semiconductor substrate, a main direction of the trench portions in the transistor portions is different from a main direction of the trench portions in the diode portions.
Tatsuya Naito
Filed: 28 Jan 19
Utility
Semiconductor device and method of manufacturing semiconductor device
4 May 20
A semiconductor device, including a semiconductor substrate, a semiconductor layer disposed on a surface of the semiconductor substrate, a first semiconductor region disposed in the semiconductor layer at a surface thereof, a source region and a second semiconductor region disposed in the first semiconductor region at a surface thereof, a source electrode contacting the source region and the second semiconductor region, a gate insulating film disposed on the surface of the semiconductor layer and covering a portion of the first semiconductor region between the source region and the semiconductor layer, a gate electrode disposed on a surface of the gate insulating film, a drain electrode disposed on another surface of the semiconductor substrate, and a third semiconductor region, which has an impurity concentration higher than that of the first semiconductor region, formed in the semiconductor layer at the surface thereof and being electrically connected to the source electrode.
Yasuyuki Hoshi, Yuichi Harada, Akimasa Kinoshita, Yasuhiko Oonishi
Filed: 2 Oct 16
Utility
Vertical semiconductor device and method of manufacturing vertical semiconductor device
4 May 20
A vertical semiconductor device is provided, including a transistor region and a Schottky diode region, and having, in a gallium nitride layer in the Schottky diode region, a first well region, a diode trench portion that is provided in direct contact with the first well region in an array direction in which the transistor region and the Schottky diode region are arrayed, a first upper drift region that is connected to the bottom of the diode trench portion, a lower drift region that is connected to the bottom of the first well region and a bottom of the first upper drift region, and a conductive portion that is connected to an upper portion of the first upper drift region.
Katsunori Ueno
Filed: 19 Dec 18
Utility
Charger with inverter and inverter gate drive circuit
4 May 20
A high-speed charger with a long lifespan such that a power converting inverter can be reliably stopped in accordance with a forced stop signal, without causing a malfunction.
Hirokazu Tajima, Osamu Takei
Filed: 7 Jun 16
Utility
Power module with high-side and low-side programmable circuit
4 May 20
A power module including first and second switching elements connected in a half-bridge configuration, an integrated circuit including high-side and low-side circuits that respectively drive the first and second switching elements, high-side and low-side programmable circuits that are respectively configured to implement first and second logic functions or parameters to be used by the high-side and low-side circuits.
Masashi Akahane
Filed: 11 Apr 19
Utility
Data communication system, data communication apparatus, and sensor apparatus
4 May 20
A system is connected to a single-wire communication line to perform bidirectional communication between a master side and a slave side, and an input clock-side transistor connected between a GND level and the communication line performs switching according to an input clock.
Masashi Akahane
Filed: 3 Feb 19