997 patents
Page 44 of 50
Utility
Inverter device
24 Feb 20
An inverter device includes a housing that houses a heat generator and a cooler, and a partition.
Masako Kodama
Filed: 24 Jan 18
Utility
Suspended underfloor power converter
24 Feb 20
A power converter to be mounted to a mounting portion of a host in a suspended manner includes a plurality of component-housing chassis configured to be connected together parallel to the mounting portion, the plurality of component-housing chassis each containing parts for a power converter so that the plurality of component-housing chassis collectively constitute the power converter for the host, wherein at least one of the plurality of component-housing chassis has a support frame, the support frame protruding out so as to extend into at least an adjacent one of the component-housing chassis, wherein the at least adjacent one of the component-housing chassis has an insertion hole for inserting the support frame, and wherein the support frame is configured to be inserted into the insertion hole in the adjacent component-housing chassis and fixed to the adjacent component-housing chassis.
Kiyoshi Takahashi
Filed: 5 Jul 18
Utility
Magnetic recording medium
17 Feb 20
The purpose of the present invention is to provide a magnetic recording medium capable of reducing the surface roughness of the magnetic recording layer without adversely affecting the magnetic properties of the magnetic recording layer.
Hiroyasu Kataoka, Hiroto Kikuchi, Akira Furuta, Hitoshi Nakata, Tomohiro Moriya, Takehito Shimatsu
Filed: 31 May 17
Utility
Semiconductor device manufacturing method and soldering support jig
17 Feb 20
A semiconductor device manufacturing method includes: applying solder to an arrangement area of a substrate, the substrate having a connection area to which a wiring member is to be directly connected, the connection area neighboring the arrangement area; arranging a component on the arrangement area via the solder; and soldering the component to the arrangement area by heating the solder while covering the connection area.
Rikihiro Maruyama, Kenshi Kai, Kazuya Adachi
Filed: 25 Jun 18
Utility
High breakdown voltage passive element
17 Feb 20
Warping of a semiconductor wafer occurring due to a difference in the thermal expansion rates of an insulating film and the semiconductor wafer is restricted.
Masaharu Yamaji
Filed: 4 Feb 19
Utility
High voltage junction field effect transistor (JFET) with spiral voltage divider
17 Feb 20
An interlayer insulating film is disposed on a LOCOS oxide film covering an n-type drift region of a JFET.
Taichi Karino, Masaharu Yamaji
Filed: 29 Nov 16
Utility
Production method for semiconductor device
17 Feb 20
A method for producing a semiconductor device includes implanting protons from a rear surface of a semiconductor substrate of a first conductivity type, and after the implanting protons, forming a first semiconductor region of the first conductivity type having a impurity concentration higher than that of the semiconductor substrate by performing an annealing process for the semiconductor substrate in an annealing furnace.
Yusuke Kobayashi, Takashi Yoshimura
Filed: 25 Mar 18
Utility
Insulated gate bipolar transistor
17 Feb 20
An IGBT includes current sense cell having a sensing area for sensing a current flowing an active area and an extraction area for extracting a hole current.
Tohru Shirakawa
Filed: 25 Oct 18
Utility
Semiconductor device and oscillation suppressing device
17 Feb 20
A semiconductor device of the present invention suppresses high frequency noise caused in a semiconductor device incorporating SiC elements.
Naotaka Matsuda, Seiki Igarashi, Hideaki Kakiki, Susumu Iwamoto
Filed: 24 Jun 18
Utility
Semiconductor device
10 Feb 20
An interlayer insulating film covers a gate electrode and a gate insulating film embedded in a trench.
Yuichi Hashizume, Keishirou Kumada, Yoshihisa Suzuki, Yasuyuki Hoshi
Filed: 26 Aug 18
Utility
Semiconductor device with improved current flow distribution
10 Feb 20
A semiconductor device is provided, including: a semiconductor substrate; a transistor section provided in the semiconductor substrate; and a diode section provided in the semiconductor substrate being adjacent to the transistor section, wherein the diode section includes: a second conductivity-type anode region; a first conductivity-type drift region; a first conductivity-type cathode region; a plurality of dummy trench portions arrayed along a predetermined array direction; a contact portion provided along an extending direction of the plurality of dummy trench portions that is different from the array direction; and a lower-surface side semiconductor region provided directly below a portion of the contact portion at an outer end in the extending direction.
Tatsuya Naito
Filed: 12 Oct 17
Utility
Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of the epitaxial-growth layer
10 Feb 20
A method of manufacturing a semiconductor device includes assigning a plurality of chip regions on an epitaxial-growth layer of a semiconductor substrate where the epitaxial-growth layer is grown on a bulk layer and forming a plurality of device structures on the plurality of chip regions, respectively, thinning the semiconductor substrate from a bottom-surface side of the bulk layer, bonding a supporting-substrate on a bottom surface of the thinned semiconductor substrate, selectively removing the supporting-substrate so that the bottom surface of the semiconductor substrate is exposed, at locations corresponding to positions of each of main current paths in the plurality of device structures, respectively, dicing the semiconductor substrate together with the supporting-substrate along dicing lanes between the plurality of the chip regions so as to form a plurality of chips.
Kenichi Iguchi, Haruo Nakazawa
Filed: 27 Feb 17
Utility
Semiconductor apparatus and semiconductor apparatus manufacturing method
10 Feb 20
To provide a semiconductor apparatus including: a semiconductor substrate having a drift region; an emitter region provided inside the semiconductor substrate and above the drift region; a base region provided between the emitter and drift regions; an accumulation region provided between the base and drift regions; and a plurality of gate trench portions provided to penetrate the accumulation region from an upper surface of the semiconductor substrate.
Tatsuya Naito
Filed: 6 Jun 18
Utility
Totem-pole circuit driver
10 Feb 20
A driver circuit for driving a totem-pole circuit including cascade-connected high-side and low-side power devices.
Shinichi Tezuka
Filed: 25 Jul 19
Utility
Power semiconductor module and power semiconductor device
10 Feb 20
The area projections or a spacer occupies on the upper surface of a resin casing increases as the size of a power semiconductor module decreases, and therefore another means for defining a clearance between a control board and the resin casing is desired.
Kenshi Terashima
Filed: 25 Feb 18
Utility
Method of producing an electrophotographic photoreceptor
3 Feb 20
A method of producing an electrophotographic photoreceptor composed of a photosensitive layer provided on a conductive substrate, includes, in the formation of an outermost layer, controlling slope k of a straight line obtained by plotting the average film density of outermost layer and boiling point of solvent used for the formation of the outermost layer along the ordinate and the abscissa, respectively, to be 1.50E-4 (g/cm3·° C.) or greater, and adjusting the difference in film density of the outermost layer between the surface side and the side close to the conductive substrate to be 0.030 g/cm3 or less.
Shinjiro Suzuki, Tomoki Hasegawa, Hirotaka Kobayashi
Filed: 31 Oct 17
Utility
Coin validation device
3 Feb 20
A coin validation device that is implemented in a coin handling machine which stores therein a deposited coin on a denomination-by-denomination basis and which pays out stored coin in response to a disbursement instruction, the coin validation device, includes: a carrier that carries the deposited coin in a horizontally-fallen state in one direction; and a discriminator that identifies authenticity and denominations of the coin carried in the one direction by the carrier.
Yoshito Shibata, Kazuhiro Tomita, Takeshi Oiwa, Takuya Yamane, Masashi Nagata, Yoshiyuki Fukushima, Takao Okuhara, Yoshihiro Taniguchi, Masao Nakayama, Shojiro Onzuka, Takuya Fukuura, Shunsuke Kowase, Tsuyoshi Horiguchi
Filed: 31 Oct 17
Utility
Method of manufacturing semiconductor device using photoresist as ion implantation mask
3 Feb 20
A method of manufacturing a semiconductor device, including providing a semiconductor wafer, forming a photoresist film on a main surface of the semiconductor wafer, forming a first mask pattern and a second mask pattern on the photoresist film, selectively removing portions of the photoresist film according to the first and second mask patterns, to respectively form a first opening and a second opening in the photoresist film, a position of the second opening differing from that of the first opening, and performing ion implantation of an impurity into the semiconductor wafer, using the photoresist film having the first and second openings formed therein as a mask.
Naoko Kodama
Filed: 29 Jan 18
Utility
Assessment method, and semiconductor device manufacturing method
3 Feb 20
Yasushi Niimura, Hideki Shishido, Takayuki Shimatou, Toshihiro Arai
Filed: 9 Aug 19
Utility
Semiconductor apparatus
3 Feb 20
A semiconductor apparatus can block the voltage from the power source when the voltage from the power source reaches an excessive level, without requiring a larger chip size.
Shigemi Miyazawa
Filed: 28 Nov 16