997 patents
Page 46 of 50
Utility
Power converter
30 Dec 19
A power converter includes a chassis having attached thereto a holding fixture for mounting the chassis to a mounting portion in a suspended manner.
Kiyoshi Takahashi
Filed: 5 Jul 18
Utility
Method of manufacturing semiconductor device
30 Dec 19
A resist protective film protects front surfaces of a front electrode and a polyimide protective film.
Takashi Yoshimura, Hiroshi Takishita, Seiichi Miyahara
Filed: 30 Jun 19
Utility
Semiconductor device
30 Dec 19
A semiconductor device is provided.
Yoshihiro Kodaira
Filed: 26 Dec 17
Utility
Semiconductor device and method of manufacturing the semiconductor device
30 Dec 19
On a conductive plate of an insulated substrate, one open end of a main body part of a cylindrical contact member is bonded by solder.
Kazuya Adachi
Filed: 28 Feb 18
Utility
Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same
30 Dec 19
The SiC-IGBT includes a p-type collector layer, an n−-type voltage-blocking-layer provided on the collector layer, p-type base regions provided on the n−-type voltage-blocking-layer, n+-type emitter regions provided in an upper portion of the p-type base region, a gate insulating film provided in an upper portion of the voltage-blocking-layer, and a gate electrode provided on the gate insulating film.
Takeshi Tawara, Hidekazu Tsuchida, Koichi Murata
Filed: 25 Apr 18
Utility
Semiconductor device with current/voltage vibration suppression at turning on and off
30 Dec 19
A semiconductor device, including a semiconductor substrate, an active region formed on the semiconductor substrate, and a gate runner disposed to surround the active region.
Shigeki Sato
Filed: 29 Jun 16
Utility
Semiconductor device
30 Dec 19
A semiconductor substrate made of silicon carbide is provided with first and second cells having a MOS gate structure.
Naoki Kumagai
Filed: 6 Aug 18
Utility
Semiconductor device having a schottky barrier diode
30 Dec 19
Plural trenches are provided in a semiconductor substrate.
Yusuke Kobayashi, Manabu Takei, Shinsuke Harada
Filed: 29 Aug 18
Utility
Semiconductor device and method of manufacturing semiconductor device
30 Dec 19
A MOS gate having a trench gate structure is formed on the front surface side of a silicon carbide substrate.
Akimasa Kinoshita
Filed: 13 Dec 18
Utility
Gate drive apparatus for driving a plurality of switching elements connected in parallel to each other
30 Dec 19
A gate drive apparatus including a switching time measurement unit that calculates a first or second delay time that is between a time at which a rising edge or a falling edge of a gate voltage is applied to the gate terminal of a switching element and a time at which the switching element is turned on or off.
Ichiro Nomura
Filed: 30 May 19
Utility
Inverter device
30 Dec 19
An inverter device includes a heat generator, a cooler, and a cooler-side housing that covers the cooler and includes an opening that exposes a side of the cooler closer to the heat generator, and a circumferential rib that comes into contact with the cooler is provided in a vicinity of a peripheral edge of the opening of the cooler-side housing.
Tomokazu Yoshikawa
Filed: 29 Jan 18
Utility
Super junction MOSFET device and semiconductor chip
23 Dec 19
A super junction MOSFET device including a semiconductor substrate; a base region provided on a primary surface side of the semiconductor substrate and having impurities of a first conductivity type; a source region that includes a portion of a frontmost surface of the base region and has impurities of a second conductivity type; a gate electrode that penetrates through the base region; a source electrode that is provided on the base region and is electrically connected to the source region; and a front surface region that is provided on an entirety of the frontmost surface of the base region in a region differing from a region where the source region and the gate electrode are provided in the base region, is electrically connected to the source electrode provided on the base region, and has a lower impurity concentration of impurities of the second conductivity type than the source region.
Tohru Shirakawa, Tatsuya Naito, Shigemi Miyazawa
Filed: 17 Jan 19
Utility
Semiconductor pressure sensor with piezo-resistive portions with conductive shields
16 Dec 19
The potential difference between a piezo-resistive portion and a shield film is to be reduced.
Takahide Tanaka
Filed: 27 Feb 18
Utility
Coin identification device
16 Dec 19
A coin identification device includes: a first magnetic sensor detecting an amount of magnetic variation while the coin passes in the carrying direction; a second magnetic sensor installed where the second magnetic sensor detects a passage of an arc of a small-diameter coin when the first magnetic sensor detects a passage of the small-diameter coin; and a third magnetic sensor installed where the third magnetic sensor does not detect a passage of an arc of the small-diameter coin when the first magnetic sensor and the second magnetic sensor detect a passage of the small-diameter coin and detects a passage of an arc of a large-diameter coin; and an identification control unit identifying an outer diameter of the small-diameter coin and the large-diameter coin based on the amount of magnetic variation of the first magnetic sensor.
Kazutoshi Machida, Takamasa Asano, Yu Taniguchi, Yoshihiro Nakamura, Nobuyuki Niizuma, Shuhei Saito
Filed: 22 Oct 17
Utility
Semiconductor device and method of manufacturing thereof
16 Dec 19
A semiconductor device includes an n−-type drift layer of an formed on an n+-type SiC substrate; a p-type layer provided on a surface opposite that facing the n+-type SiC substrate; and an n-type buffer layer provided, as a recombination promoting layer, between the n−-type drift layer and the n+-type SiC substrate, the n-type buffer layer having an impurity concentration higher than that of the n−-type drift layer.
Shinichiro Matsunaga
Filed: 13 Mar 18
Utility
Semiconductor device
16 Dec 19
A semiconductor device including: a drift region formed on a semiconductor substrate; a gate trench portion provided on an upper surface of the semiconductor substrate; a first and second mesa portion adjacent to one and the other of the gate trench portions; an accumulation region provided above the drift region in the first mesa portion; a base region provided above the accumulation region; a emitter region provided between the base region and the upper surface of the semiconductor substrate; an intermediate region provided above the drift region in the second mesa portion; a contact region provided above the intermediate region, wherein the gate trench portion has a gate conductive portion; a bottom portion of the gate conductive portion has a first step and second step; and, at least part of the intermediate region is provided between the steps and the bottom portion of the gate trench portion will be provided.
Tatsuya Naito
Filed: 21 Jun 18
Utility
Driving circuit
16 Dec 19
Voltage surge is prevented when the output from a driver of a driving circuit performs a hard shutdown.
Masashi Akahane
Filed: 27 Apr 17
Utility
LED drive circuit
16 Dec 19
In aspects of the invention, a flyback converter configuration LED drive circuit, by adopting a configuration such that anode voltages of LEDs smoothed by a smoothing capacitor on the secondary side of a transformer and a terminal of a drive IC circuit are used as a node common.
Koji Sonobe
Filed: 12 Nov 13
Utility
Perpendicular magnetic recording medium
9 Dec 19
The purpose of the present invention is to provide a magnetic recording medium including a first magnetic recording layer having a large coercive force and a granular structure in which magnetic crystal grains are well separated from each other.
Hitoshi Nakata, Takehito Shimatsu
Filed: 12 Jan 15
Utility
Semiconductor device
9 Dec 19
A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base.
Shoji Yamada, Takashi Shiigi, Yasuyuki Hoshi
Filed: 24 May 18