997 patents
Page 50 of 50
Utility
Semiconductor device having trenches in termination structure region thereof and method for manufacturing the same
21 Oct 19
In a termination structure region, a first semiconductor layer of a first conductivity type, with an impurity concentration lower than that of a semiconductor substrate, is provided on the substrate of the first conductivity type.
Masanobu Iwaya, Yasuhiko Oonishi, Yusuke Kobayashi
Filed: 27 Jun 18
Utility
Uninterruptible power supply
21 Oct 19
An uninterruptible power supply includes an input switch, an input filter, and a power converter disposed in this order, an output filter and an output switch disposed in this order from the power converter, and a plurality of conductors that connects the input switch, the input filter, the power converter, the output filter, and the output switch to each other in this order.
Seiitsu Kin, Daisuke Kawasaki, Yoshihiko Yamagata, Hiroki Muratsu, Tomo Kurozaki, Yosuke Iwamaru, Keita Koshii
Filed: 3 Jul 17
Utility
Linear motor device
21 Oct 19
A linear motor device comprising: a path member including a magnet extending in a movement direction; and a moving body including a coil that is movably mounted on the path member; the linear motor device generates thrust in the movement direction between the magnet and the coil by current being passed through the coil; the moving body further includes a magnetic shielding target object, and a magnetic shielding member formed from strongly magnetic material that shields the magnetic shielding target.
Ryo Nagata, Takashi Kido, Yoshihiro Shirakawa, Masaki Kurono
Filed: 19 Dec 13
Utility
Electronic device manufacturing device and manufacturing method thereof
21 Oct 19
When manufacturing three-dimensional electronic device by layering multiple layer cross sections sliced at a predetermined thickness of three-dimensional electronic device which is the target for forming, first, each layer cross section using multiple types of materials is formed by being layered on top of the layer cross section underneath, and each time a layer cross section is formed, the cross section is cured or sintered by being exposed to ultraviolet light, a laser beam, visible light, and so on.
Seigo Kodama, Kenji Tsukada, Masatoshi Fujita
Filed: 12 Sep 12
Utility
Vertically sliding manual opening and closing door
21 Oct 19
A vertically sliding manual opening and closing door with good one-handed operability, including: a plate-like door member configured to open and close an opening section by being slid vertically; a support member configured to guide the vertical sliding of the door member by a support section configured to support left and right end sections of the door member; and a lock mechanism configured to position the door member that has been raised.
Jun Yanagisaki, Toshifumi Suzuki, Osamu Nagai
Filed: 23 Oct 14
Utility
Pulse current application circuit and control method thereof
21 Oct 19
A pulse current application circuit for applying a pulse current to a current application target.
Naoki Kumagai
Filed: 30 Apr 18
Utility
Inspection support device and inspection support method
21 Oct 19
The inspection support device is provided with a camera provided on a moving body so as to be capable of imaging a circuit board, and an imaging control section configured to control imaging processing of the camera and acquire image data of an inspection component, which is a component that is a target for inspection among electronic components mounted by the component mounter, when the inspection component is mounted on the circuit board.
Hirotaka Hirayama, Shigeto Oyama, Satoshi Yoshioka, Satoshi Ushii
Filed: 19 Jan 15
Utility
Method of manufacturing semiconductor device
14 Oct 19
An interlayer insulating film is dry etched using a CHF3 gas and by using, as a mask, a resist film having a first opening and a second opening that is wider than the first opening, thereby forming a first contact hole of a predetermined depth in the first opening and forming a second contact hole in the second opening.
Naoki Kuneshita
Filed: 26 Jun 18
Utility
Semiconductor device
14 Oct 19
The semiconductor device includes a first insulating circuit substrate; a semiconductor chip including a plurality of control electrodes, disposed on the first insulating circuit substrate; a second insulating circuit substrate including a plurality of first through-holes in which conductive members are arranged on inner walls and/or an outer periphery of ends of the first through-holes, the second insulating circuit substrate being disposed above the semiconductor chips; and first pins inserted into the first through-holes and having at one end a columnar part connected to the control electrodes of the semiconductor chips, and having at another end a head part that is wider than an inner diameter of the first through-holes.
Hiromichi Gohara, Kohei Yamauchi, Shinji Tada, Tatsuo Nishizawa, Yoshitaka Nishimura
Filed: 6 Mar 18
Utility
Laser welding method
14 Oct 19
A laser welding method using a laser welding jig having a plurality of pressing parts, includes a step of placing a second member on a first member; a step of pressing the second member with the plurality of pressing parts in a direction toward the first member to thereby form a gap between the first member and the second member at most 300 μm; and a first welding step of laser-welding the first member and the second member by irradiating on a surface of the second member at a location between the pressing parts with laser light while conducting the step of pressing.
Yuta Tamai
Filed: 13 Jun 16
Utility
Semiconductor device and method of manufacturing semiconductor device
7 Oct 19
A semiconductor device includes an n-type silicon carbide epitaxial layer on a front surface of an n+-type silicon carbide substrate.
Naoyuki Ohse, Shinsuke Harada, Makoto Utsumi, Yasuhiko Oonishi
Filed: 29 May 18
Utility
Semiconductor device
7 Oct 19
A front surface electrode common to a plurality of unit cells is provided substantially all over an active region of a semiconductor element.
Takeyoshi Nishimura
Filed: 15 Nov 15
Utility
Semiconductor module
7 Oct 19
A semiconductor module includes a high-side switching device and a low-side switching device that respectively form an upper arm and a lower arm, freewheeling diodes that are respectively connected to the switching devices in anti-parallel, and a high-side driver circuit and a low-side driver circuit that respectively switch the high-side switching device and the low-side switching device ON and OFF.
Kenichi Okayama, Nobuhiro Higashi
Filed: 8 Aug 18
Utility
Electrophotographic photoconductor, manufacturing method thereof, and electrophotographic apparatus using the same
30 Sep 19
Provided is a positively charged electrophotographic photoconductor, a manufacturing method thereof, and an electrophotographic apparatus using the same.
Seizo Kitagawa, Toshiki Takeuchi, Kazuya Saito
Filed: 29 Aug 18
Utility
Semiconductor device and manufacturing method of semiconductor device
30 Sep 19
A space having a certain thickness is provided between a metal base and a heat-dissipation fin set or the like.
Susumu Iwamoto
Filed: 31 Jan 18
Utility
Method of manufacturing semiconductor device
30 Sep 19
A method of manufacturing a semiconductor device, including implanting hydrogen atoms from a second principal surface of a semiconductor substrate, forming a plurality of second semiconductor layers that each have a carrier concentration higher than that of the first semiconductor layer and that have carrier concentration peak values at different depths from the second principal surface of the semiconductor substrate, applying a heat treatment process to promote generation of donors from the hydrogen atoms, implanting an impurity from the second principal surface of the semiconductor substrate, forming a third semiconductor layer in the semiconductor substrate at the second principal surface thereof, and applying another heat treatment process to locally heat the semiconductor substrate, so as to reduce the carrier concentration at an interface between the third semiconductor layer and the second semiconductor layer adjacent to the third semiconductor layer.
Yuichi Onozawa
Filed: 25 Mar 18
Utility
Driving device of semiconductor device
30 Sep 19
A driving device of a semiconductor device includes a plurality of protection factor detection units, an identification signal generation unit, a continuation signal generation unit, a signal selection unit, and an alarm signal output unit.
Kenshi Terashima
Filed: 27 Aug 18