997 patents
Page 42 of 50
Utility
Power semiconductor module and drive circuit
13 Apr 20
A power semiconductor module includes an insulated-gate type power semiconductor device, and a drive circuit controlling a gate voltage applied to the power semiconductor device in accordance with an input signal to drive the power semiconductor device so as to turn ON and OFF.
Masahiro Sasaki
Filed: 3 Jan 18
Utility
Insulated-gate semiconductor device driving circuit
13 Apr 20
A driving circuit that drives an insulated-gate semiconductor device.
Takahiro Mori
Filed: 27 Jan 19
Utility
Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate
6 Apr 20
A silicon carbide semiconductor substrate includes an epitaxial layer.
Fumikazu Imai
Filed: 31 Jul 17
Utility
Semiconductor device
6 Apr 20
A semiconductor device having a housing is provided, where the housing includes the first surface, concave portions provided to the first surface, the second surface to face toward the first surface, and convex portions provided in contact with the second surface.
Tadahiko Sato
Filed: 29 Jul 18
Utility
Diode and method of manufacturing diode
6 Apr 20
A diode is provided, the diode including: a semiconductor layer of a first conductivity type, configured to have a trench structure and be an epitaxial layer of a wide gap semiconductor; a semiconductor layer of a second conductivity type, configured to be at least in contact with a side wall of the trench structure and be an epitaxial layer of the wide gap semiconductor; and an electrode configured to be in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, on the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type.
Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo
Filed: 29 Oct 18
Utility
Semiconductor device
6 Apr 20
A semiconductor device including: an insulating substrate; a semiconductor element mounted on the insulating substrate; an internal printed circuit board disposed on the semiconductor element; and a sealing member that seals the semiconductor element, the internal printed circuit board, and at least a portion of the insulating substrate.
Yuji Takematsu, Kenji Okamoto
Filed: 27 Mar 19
Utility
Semiconductor package, semiconductor device and semiconductor device manufacturing method
30 Mar 20
To provide a semiconductor package including a protruding part at the bottom surface of a package main body.
Takayuki Shimatou
Filed: 6 Mar 18
Utility
Substrate for semiconductor devices
30 Mar 20
Provided is a substrate for semiconductor devices comprising: an insulating substrate; and a first metal board having a plurality of sides and formed on a first surface of the insulating substrate; wherein the first metal board includes: a corner portion positioned closer to a corner of a first side of the first metal board, for which a creepage distance between an edge of the first metal board and an edge of the insulating substrate reaches a smallest value for the first side; and a center portion positioned closer to a center of the first side than the corner portion, for which a creepage distance between the edge of the first metal board and the edge of the insulating substrate exceeds the smallest value; wherein a range of the center portion is larger than a range of the corner portion.
Yoshinori Uezato
Filed: 29 Jan 17
Utility
Stator and rotating electrical machine including the same
30 Mar 20
A stator reducing a coil end height without interference between conductor segments and without damage to an insulating coating.
Hideki Ohguchi, Hitoshi Nakazono, Hideki Nishikawa
Filed: 28 Jun 17
Utility
Power converter
30 Mar 20
A power converter in which a plurality of semiconductor switches are connected to a drive circuit configured to control states of the semiconductor switches, the power converter including: a plurality of semiconductor switches having the same reference potential; a drive circuit configured to control states of the plurality of semiconductor switches; and a multilayer substrate in which a wiring that connects the drive circuit and the plurality of semiconductor switches and includes a reference potential wiring and a control signal wiring is disposed, wherein, in the multilayer substrate, the reference potential wiring and the control signal wiring are disposed in different layers at positions overlapping in a substrate lamination direction, and within the wiring, in a common wiring portion from the drive circuit to a branch point of the wiring and a branch wiring portion from the branch point to each of the semiconductor switches, an impedance of the common wiring portion is set to be lower than an impedance of the branch wiring portion and wiring impedances of the branch wiring portions are matched to each other.
Koji Maruyama
Filed: 24 Jul 17
Utility
Driving apparatus and semiconductor device
30 Mar 20
A driving apparatus is provided, the driving apparatus including: a gate driving unit that drives a semiconductor element; a sampling unit that samples, in an on-period of the semiconductor element, an observation value that changes according to an on-current flowing through the semiconductor element; and a changing unit that changes a driving condition under which the gate driving unit drives a gate of the semiconductor element when the semiconductor element is turned off according to the observation value sampled in an on-period of the semiconductor element.
Kunio Matsubara, Tsuyoshi Nagano
Filed: 22 Oct 18
Utility
Resin composition
23 Mar 20
A resin composition is disclosed that includes a thermosetting base resin; a curing agent; an inorganic filler; and at least one fluorine resin powder selected from polyvinylidene fluoride, polychlorotrifluoroethylene, and a tetrafluoroethylene/perfluoro(alkyl vinyl ether)/chlorotrifluoroethylene copolymer, and a semiconductor device which is fabricated by being sealed using a sealant formed of the resin composition.
Yuko Nakamata, Yuji Ichimura
Filed: 27 Feb 17
Utility
Semiconductor device
23 Mar 20
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; a trench; a second semiconductor region of the second conductivity type; a third semiconductor region of the second conductivity type; and a fourth semiconductor region of the first conductivity type.
Akimasa Kinoshita, Keiji Okumura
Filed: 5 Dec 18
Utility
Semiconductor device having an emitter region and a contact region inside a mesa portion
23 Mar 20
A semiconductor device includes: a gate trench portion and a dummy trench portion provided extending in a predetermined direction of extension at the upper surface of the semiconductor substrate; a mesa portion sandwiched by the gate trench portion and the dummy trench portion; an emitter region provided between the upper surface of the semiconductor substrate and the drift region and provided at an upper surface of the mesa portion and adjacent to the gate trench portion; and a contact region provided between the upper surface of the semiconductor substrate and the drift region and provided at the upper surface of the mesa portion and adjacent to the dummy trench portion.
Tatsuya Naito
Filed: 22 Apr 18
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
23 Mar 20
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first silicon carbide layer of the first conductivity type, and an insulating film.
Makoto Utsumi, Yasuhiko Oonishi, Fumikazu Imai
Filed: 27 Mar 18
Utility
Semiconductor device
23 Mar 20
In an edge termination region, in a carrier drawing region between an active region and a gate runner part, a p+-type contact region is provided in a surface region of a p-type well region.
Tohru Shirakawa, Yoshiharu Kato
Filed: 29 Oct 18
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
23 Mar 20
In forming an ohmic electrode on a back surface of an n-type SiC substrate, an n+-type semiconductor region is formed in a surface layer of the back surface of an n-type epitaxial substrate by ion implantation.
Naoyuki Ohse, Fumikazu Imai, Tsunehiro Nakajima, Kenji Fukuda, Shinsuke Harada, Mitsuo Okamoto
Filed: 10 May 16
Utility
Information processing apparatus, information processing system and medium
23 Mar 20
An information processing apparatus that processes a plurality of encrypted text data items includes: an input unit for inputting first data and second data that are the encrypted text data items; a first transforming unit for transforming the first data to first transformed data based on a first table; a second transforming unit for transforming the second data to second transformed data based on a second table; an addition unit for calculating an addition result by adding the first transformed data and the second transformed data; a remainder calculation unit for obtaining a remainder by dividing the addition result by an exponential number having 2 as a base and having the number of bits of the encrypted text data items as an exponent; and a third transforming unit for outputting an output result by transforming the remainder based on a third table.
Kenji Takatsukasa
Filed: 19 Feb 18
Utility
Gas concentration measuring device
23 Mar 20
A gas concentration measuring device including a light emitter and a light receiver which are disposed so as to be opposed to each other with a hollow tube-like measurement pipe interposed therebetween.
Yoshinori Fukui, Ryota Kobayashi, Tetsuya Yokoyama, Tsuyoshi Inoue, Yusuke Oda, Michiyasu Okada, Kozo Akao, Ryouichi Higashi
Filed: 5 Mar 17
Utility
Coin detection antenna and coin processing device
16 Mar 20
A coin detection antenna includes a substrate and an air core coil in a track shape including a wiring pattern provided on the substrate, and a width of an air core of the air core coil in a short-side direction is equal to or less than twice a thickness of a smallest coin having a smallest thickness of coins to be detected.
Ryuuichi Nagashima
Filed: 23 Sep 18