997 patents
Page 38 of 50
Utility
Perpendicular magnetic recording medium
13 Jul 20
The magnetic recording medium includes at least a nonmagnetic substrate and a magnetic recording layer, the magnetic recording layer consists of a first magnetic recording layer or a plurality of layers including at least the first magnetic recording layer and a second magnetic recording layer, the first magnetic recording layer has a granular structure including a first magnetic crystal grain and a first nonmagnetic crystal grain boundary, the first magnetic crystal grain consists of an ordered alloy having Fe, Pt and Rh, the first nonmagnetic crystal grain boundary consists of carbon, boron or a combination thereof, the second magnetic recording layer has a granular structure including a second magnetic crystal grain and a second nonmagnetic crystal grain boundary, the second magnetic crystal grain consists of an FePt ordered alloy or an ordered alloy having Fe, Pt and Rh, and the second nonmagnetic crystal grain boundary includes carbon.
Shinji Uchida, Takehito Shimatsu
Filed: 31 Aug 17
Utility
Semiconductor device
13 Jul 20
A semiconductor device is provided that includes: an edge termination portion provided in the peripheral portion of a semiconductor substrate; and an active portion surrounded by the edge termination portion, wherein the active portion includes: a plurality of gate trench portions arrayed along a predetermined array direction; a plurality of dummy trench portions provided between a gate trench portion closest to the edge termination portion among the plurality of gate trench portions and the edge termination portion; mesa regions located between each of the plurality of dummy trench portions; and accumulation regions with a first conductivity-type provided in at least a part of the mesa regions.
Tatsuya Naito
Filed: 19 Sep 18
Utility
Driver circuit
13 Jul 20
A driver circuit includes a gate capacitance discharge circuit that reduces a resistance value of a resistor for pulling down the gate of a PMOSFET at the output stage for a predetermined period at the timing when an NMOSFET turns on and a pull-down resistor switching circuit that switches pull-down resistors of the gate capacitance discharge circuit, based on a divided voltage into which voltage of the high voltage power supply system is divided, in which the pull-down resistor switching circuit, when the divided voltage is higher than a reference voltage Vref, switches the pull-down resistor for the predetermined period to a resistor and, when the divided voltage is the reference voltage Vref or lower, switches the pull-down resistor to a resistor having a higher resistance value than the resistor.
Takato Sugawara
Filed: 22 Jul 19
Utility
Power converter having an input-side converter and first and second output-side converters
13 Jul 20
A power converter includes: an input-side converter including a positive-side capacitor arranged between a positive terminal and a neutral terminal as well as a negative-side capacitor arranged between a negative terminal and the neutral terminal; a first converter connected to the positive terminal and the neutral terminal; and a second converter, an input side thereof being connected to the negative terminal and the neutral terminal, with the input side also being connected in series to the first converter, and the output side thereof being connected in parallel to the first converter.
Ryuji Yamada
Filed: 4 Apr 19
Utility
Power module, reverse-conducting IGBT, and drive circuit
13 Jul 20
A power module which includes a power semiconductor chip that includes an IGBT and a freewheeling diode formed in the same chip, and the power module includes a drive circuit that is connected to the power semiconductor chip and drives the IGBT on/off.
Shigeki Sato
Filed: 29 Aug 19
Utility
Semiconductor device
6 Jul 20
A semiconductor device having a trench gate structure is provided.
Yosuke Sakurai, Yuichi Onozawa, Akio Nakagawa
Filed: 19 Feb 19
Utility
Semiconductor device and method of manufacturing semiconductor device
6 Jul 20
A semiconductor device has a termination structure region that includes a lower parallel pn structure having lower first-columns of a first conductivity type and lower second-columns of a second conductivity type; a center parallel pn structure having center first-columns of the first conductivity type and first rings of the second conductivity type; an upper parallel pn structure having upper first-columns of the first conductivity type and upper second-columns of the second conductivity type; and an uppermost parallel pn structure having uppermost first-columns of the first conductivity type and second rings of the second conductivity type.
Ryo Maeta
Filed: 29 May 18
Utility
3-level power conversion circuit including serially-connected switching element and diode
6 Jul 20
A 3-level power conversion circuit, including a high potential terminal configured to receive a high potential from a direct current (DC) power source, a low potential terminal configured to receive a low potential from the DC power source, an intermediate potential terminal configured to receive an intermediate potential from the DC power source, and an alternating current (AC) terminal configured to output an AC, the 3-level power conversion circuit being configured to perform power conversion between the high, low and intermediate potential terminals and the AC terminal.
Kansuke Fujii, Hiromu Takubo
Filed: 31 Oct 16
Utility
Semiconductor device having bonding regions exposed through protective films provided on circuit patterns onto which components are soldered
29 Jun 20
In a semiconductor device, protective films are formed on facing side surfaces of a plurality of circuit patterns and a plating process or the like is not performed on parts aside from the side surfaces where the protective films are formed.
Kenshi Kai, Rikihiro Maruyama
Filed: 28 Feb 18
Utility
Semiconductor device
29 Jun 20
In order to reduce electric field concentration in a semiconductor device including a main transistor section and a sense transistor section, the semiconductor device is provided, the semiconductor device including a semiconductor substrate of a first conductivity type, a main transistor section in an active region on the semiconductor substrate, and a sense transistor section outside the active region on the semiconductor substrate, wherein the active region is provided with a main well region of a second conductivity type, and wherein the sense transistor section has a sense gate trench section formed extending from the outside of the active region to the main well region on the front surface of the semiconductor substrate.
Tatsuya Naito
Filed: 20 Aug 18
Utility
Semiconductor device having an ohmic electrode including a nickel silicide layer
29 Jun 20
A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region.
Shoji Kitamura, Tsukasa Tashima, Kazuhiro Kitahara
Filed: 29 Oct 17
Utility
Drive device and power conversion device
29 Jun 20
A drive device includes: a gate driving unit that has gate driving circuits each driving gates of switching elements connected to each other in series; a negative-side power source that supplies a negative potential to the gate driving unit, where the negative potential steps down a reference potential that is a potential on a low side of the switching element; a negative-side capacitor for supplying a negative potential to the gate driving unit, where the negative potential steps down a reference potential that is a potential on a high side of the switching element; a timing detecting circuit that detects charging timing at which the negative-side capacitor is to be charged based on a potential state of the gate driving circuit on a high side; and a charging circuit that charges the negative-side capacitor by using the negative-side power source at the charging timing.
Masashi Akahane
Filed: 2 Jun 19
Utility
Step-down chopper circuit having bypass elements
29 Jun 20
A step-down chopper circuit having a filter reactor includes: a capacitor series circuit having a first capacitor and a second capacitor; a first series circuit having a semiconductor switching element and a diode, which is connected in parallel with the first capacitor, and a second series circuit having a diode and a semiconductor switching element, which is connected in parallel with the second capacitor; a chopper reactor whose one end is connected to a connection point of the first series circuit; and an output capacitor connected between the other end of the chopper reactor and a connection point of the second series circuit, in which a bypass current path with respect to the capacitor, which is configured to bypass a short-circuit current, is formed when one of the first series circuit and the second series circuit becomes a short-circuit state.
Motoyoshi Kubouchi
Filed: 27 Sep 18
Utility
Power conversion device
29 Jun 20
A power conversion device includes a power semiconductor switching device and a drive circuit.
Akira Nakamori
Filed: 29 Oct 18
Utility
Inverter device
29 Jun 20
An inverter device includes a sheet member that hermetically covers an operating section through which a user operates an inverter body and an ultraviolet shielding member that covers the operating section and the sheet member and shields ultraviolet rays.
Kotaro Yamazawa
Filed: 23 Sep 18
Utility
Inverter that adjusts voltage command values and control method of inverter
29 Jun 20
A control method of an inverter for outputting polyphase alternate-current electrical power is provided.
Akio Toba, Akihiro Odaka, Hidetoshi Umida
Filed: 4 Nov 18
Utility
Power converter for railroad vehicle
29 Jun 20
In a power converter for a railroad vehicle, adjacent ones of a plurality of fins are spaced apart from each other from a base connected to a base portion to a distal end, and the plurality of fins further spread to both one side and the other side in an alignment direction from the base toward the distal end.
Akira Kamiya, Kimihisa Kaneko, Yoshihisa Uehara
Filed: 19 Feb 18
Utility
Method of manufacturing semiconductor device
22 Jun 20
In each n-type epitaxial layer, p-type impurity regions are respectively formed by performing for each stacking of an n-type epitaxial layer, ion implantation using a resist mask.
Toshiaki Sakata, Takeyoshi Nishimura, Isamu Sugai, Kazuya Yamaguchi
Filed: 26 Mar 19
Utility
Semiconductor device having substrate and base plate joined by joining member
22 Jun 20
In a semiconductor device, the marginal edge of a resist member on the side closer to a substrate is between first and third positions on a metal base plate.
Taichi Itoh, Seiichi Takahashi
Filed: 27 Feb 18
Utility
Method of manufacturing semiconductor device
22 Jun 20
A method of manufacturing a semiconductor device includes providing a silicon carbide (SiC) substrate, forming a SiC layer on a front surface of the SiC substrate, selectively forming a first region in the SiC layer at a surface thereof, forming a source region and a contact region in the first region, forming a gate insulating film on the SiC layer and on a portion of the first region between the SiC layer and the source region, forming a gate electrode on the gate insulating film above the portion of the first region, forming an interlayer insulating film covering the gate electrode, forming a source electrode electrically connected to the source region and the contact region, forming a drain electrode on a back surface of the SiC substrate, forming a barrier film on and covering the interlayer insulating film, and forming a metal electrode on the source electrode and the barrier film.
Yuichi Harada, Yasuyuki Hoshi, Akimasa Kinoshita, Yasuhiko Oonishi
Filed: 24 Jul 19