997 patents
Page 37 of 50
Utility
Semiconductor device
10 Aug 20
Provided is a semiconductor device including a first MOSFET; a second MOSFET; a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET; a second resistor provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET; a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET; and a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET.
Yasuaki Sakai
Filed: 23 Apr 19
Utility
Reverse-conducting insulated gate bipolar transistor
10 Aug 20
A reverse-conducting semiconductor device includes a semiconductor chip having a top surface, a first side and a second side orthogonal to the first side in a plan view, in which a plurality of transistor regions and a plurality of diode regions are alternately arranged and an upper-electrode is provided on top surface-sides of the transistor regions and the diode regions; and a wiring member having a flat-plate portion having a rectangular-shape which is metallurgically jointed to the upper-electrode via a joint member above the diode regions.
Hayato Nakano, Keiichi Higuchi, Akihiro Osawa
Filed: 21 Mar 19
Utility
Semiconductor device
10 Aug 20
A semiconductor device includes: a first conductivity-type semiconductor substrate; a second conductivity-type base region provided on a front surface side inside the semiconductor substrate, a gate trench portion provided inside the semiconductor substrate and penetrating the base region from a front surface of the semiconductor substrate, the gate trench portion having a gate conductive portion, and a dummy trench portion provided inside the semiconductor substrate and penetrating the base region from a front surface of the semiconductor substrate, the dummy trench portion including an upper dummy conductive portion having an emitter potential and a lower gate conductive portion positioned below the upper dummy conductive portion and having a gate potential, wherein the lower gate conductive portion of the dummy trench portion is connected to the gate conductive portion of the gate trench portion.
Tatsuya Naito
Filed: 25 Sep 18
Utility
Semiconductor device and manufacturing method thereof
10 Aug 20
A manufacturing yield and reliability of a semiconductor device including a power semiconductor element is improved.
Ryoji Kosugi, Shiyang Ji, Kazuhiro Mochizuki, Yasuyuki Kawada, Hidenori Kouketsu
Filed: 1 Jun 17
Utility
Semiconductor device and power module
10 Aug 20
A device including: a transistor having a collector-emitter junction connected in series or parallel to a current detection resistance for detecting current that flows through a current sensing terminal of a switching element; and an overshoot processing circuit connected between the current sensing terminal and a base of the transistor, which reduces overshoot of sense current flowing through the current detection resistance, the overshoot is caused by switching operation of the switching element, by controlling the transistor depending on current input from the current sensing terminal, is provided.
Hidetomo Ohashi
Filed: 28 Oct 18
Utility
Electrophotographic photoreceptor, method for manufacturing same, and electrophotographic apparatus using same
3 Aug 20
Masaru Takeuchi, Hirotaka Kobayashi, Toshiki Obinata, Fengqiang Zhu
Filed: 30 Jan 19
Utility
Insulated-gate bipolar transistor (IGBT) or diode including buffer region and lifetime killer region
3 Aug 20
A semiconductor device is provided.
Takahiro Tamura, Yuichi Onozawa, Misaki Takahashi
Filed: 23 Jan 18
Utility
Momentary-voltage-drop compensation apparatus and momentary-voltage-drop compensation system
3 Aug 20
A momentary-voltage-drop compensation apparatus interconnecting a power system and a DC power supply to a load.
Kansuke Fujii
Filed: 16 Dec 18
Utility
Semiconductor integrated device and gate screening test method of the same
27 Jul 20
To provide a semiconductor integrated device capable of a gate screening test with no need for any additional circuit and without adding any gate screening terminal.
Takahiro Mori, Hitoshi Sumida, Masahiro Sasaki, Akira Nakamori, Masaru Saito, Wataru Tomita, Osamu Sasaki
Filed: 22 Apr 18
Utility
Doping system, doping method and method for manufacturing silicon carbide semiconductor device
27 Jul 20
A doping system includes a light source to emit an optical pulse; a light source controller connected to the light source, to control an energy density of the optical pulse; and a beam adjusting unit to irradiate the optical pulse to a surface of a doping-object made of silicon carbide on which an impurity-containing source-film containing impurity atoms is deposited.
Kenichi Iguchi, Haruo Nakazawa
Filed: 26 Nov 18
Utility
Resistive element and method of manufacturing the resistive element
27 Jul 20
A resistive element includes: a semiconductor substrate; a first insulating film deposited on the semiconductor substrate; a resistive layer deposited on the first insulating film; a second insulating film deposited to cover the first insulating film and the resistive layer; a first electrode deposited on the second insulating film and electrically connected to the resistive layer; a relay wire deposited on the second insulating film without being in contact with the first electrode, and including a resistive-layer connection terminal electrically connected to the resistive layer and a substrate connection terminal connected to the semiconductor substrate with an ohmic contact; and a second electrode deposited on a bottom side of the semiconductor substrate, wherein a resistor is provided between the first electrode and the second electrode.
Taichi Karino, Hitoshi Sumida, Masaru Saito, Masaharu Yamaji, Osamu Sasaki
Filed: 25 Oct 18
Utility
Solder material for semiconductor device
27 Jul 20
To provide a lead-free solder the heat resistance temperature of which is high and thermal conductive property of which are not changed in a high temperature range.
Hirohiko Watanabe, Shunsuke Saito, Yoshitaka Nishimura, Fumihiko Momose
Filed: 27 Aug 17
Utility
Stacked integrated circuit
27 Jul 20
A stacked integrated circuit encompasses a lower chip including a lower semiconductor element and an upper surface-electrode electrically connected to an upper main-electrode region of the lower semiconductor element, the upper main-electrode region is located on an upper-surface side of the lower semiconductor element; and an upper chip including an upper semiconductor element and a lower surface-electrode electrically connected to a lower main-electrode region of the upper semiconductor element, the lower main-electrode region is located on a lower-surface side of the upper semiconductor element, the lower surface-electrode is metallurgically in contact with the upper surface-electrode.
Morio Iwamizu
Filed: 26 Dec 18
Utility
Semiconductor device
27 Jul 20
In an edge termination structure portion, first and second JTE regions are disposed concentrically surrounding an active region.
Shoji Kitamura
Filed: 18 Jun 19
Utility
Rotor and permanent magnet type rotating electrical machine
27 Jul 20
Magnet slot includes a permanent magnet insertion portion and air regions that is formed at both circumferential direction ends of the permanent magnet insertion portion.
Hideki Ohguchi, Hitoshi Nakazono, Hideki Nishikawa, Toshiya Sasaki
Filed: 27 Jun 17
Utility
Semiconductor device and method of manufacturing semiconductor device
20 Jul 20
A semiconductor device includes: a first-conductivity-type drift layer including a first-conductivity-type impurity, vacancy-oxygen-hydrogen complex defects each caused by a vacancy, an oxygen atom, and a hydrogen atom, divacancy-and-vacancy-phosphorus complex defects, having a trap density level lower than a trap density level of the vacancy-oxygen-hydrogen complex defect, and third complex defects; a plurality of donor layers provided at different depths in a depth direction of the first-conductivity-type drift layer, wherein each of the plurality of donor layers includes donors caused by the vacancy-oxygen-hydrogen complex defects, and each of the plurality of donor layers has an impurity concentration distribution that includes a first portion with a maximum impurity concentration and a second portion with a concentration gradient in which the impurity concentration is reduced from the first portion to both main surfaces of the first-conductivity-type drift layer; and a second-conductivity-type semiconductor region provided on one main surface of the first-conductivity-type drift layer.
Tomonori Mizushima, Yusuke Kobayashi
Filed: 30 Jul 18
Utility
Semiconductor device and method of manufacturing semiconductor device
20 Jul 20
In a circuit portion, a p+-type diffusion region penetrates, in the depth direction, an n−-type base region on the front side of a base substrate and surrounds a MOSFET.
Yoshiaki Toyoda, Hideaki Katakura
Filed: 12 Nov 18
Utility
Semiconductor device and manufacturing method of semiconductor device
20 Jul 20
A semiconductor device includes one or more trench gates extending in a first direction in plan view, one or more first-conductivity-type regions spaced away from each other in the first direction, where the first-conductivity-type regions are shallower than the trench gates, one or more second-conductivity-type regions alternating with the first-conductivity-type regions in the first direction, where the second-conductivity-type regions are shallower than the trench gates and deeper than the first-conductivity-type regions, and a second-conductivity-type trench spacer region spaced away from the one or more trench gates, where the trench spacer region has a higher concentration than the second-conductivity-type regions.
Tohru Shirakawa, Hidenori Takahashi
Filed: 20 May 19
Utility
Rotating electrical machine with rotor having plurality of umbrella form portions and radiating projections in between
20 Jul 20
A multiple of communication hole pairs each including two communication holes are formed in a rotor in a rotor rotation direction.
Toshiharu Mochida
Filed: 8 Aug 16
Utility
Embedded permanent magnet type rotating electric machine with permanent magnet rotor having magnet holes and central bridge
20 Jul 20
An embedded permanent magnet type motor, which has one pole configured of two permanent magnets and has a plurality of poles of permanent magnets embedded in a rotor, includes a rotor whose magnet embedding holes communicate with a rotor outer periphery.
Toshiharu Mochida, Akio Toba, Hideki Ohguchi, Hiroshi Shimada, Takeyuki Kobayashi
Filed: 7 Jun 15