997 patents
Page 35 of 50
Utility
Rotating electrical machine with rotor with plurality of umbrella-shaped portions with demagnetized center bridge portions
28 Sep 20
Provided is a rotating electrical machine that has superior rotor strength and can be manufactured at low cost, wherein torque generated by a rotor can be increased.
Toshiharu Mochida, Satoshi Imamori
Filed: 8 Aug 16
Utility
Semiconductor device and semiconductor device manufacturing method
21 Sep 20
A case of a semiconductor device has sidewall portions which surround sides of a metal substrate along the sides and a coating portion which covers the front surface of the metal substrate surrounded by the sidewall portions and which has through ring holes corresponding to fixing holes.
Rikihiro Maruyama
Filed: 25 Feb 20
Utility
Semiconductor module, electric automobile and power control unit
21 Sep 20
A semiconductor module includes: a first lead frame connected to a plurality of semiconductor chips in a first arm circuit; a second lead frame connected to a plurality of semiconductor chips in a second arm circuit; a first main terminal connected to the first lead frame; and a second main terminal connected to the second lead frame, wherein each of the first lead frame and second lead frame has a facing part, a first terminal connection portion connected to the first main terminal is provided at a first end portion of the first lead frame, a second terminal connection portion connected to the second main terminal is provided at a second end portion of the second lead frame, and the first terminal connection portion and second terminal connection portion are arranged on opposite sides when viewed from the facing parts of the first lead frame and second lead frame.
Shin Soyano, Hayato Nakano, Keiichi Higuchi, Akihiro Osawa
Filed: 28 Jan 19
Utility
Semiconductor device and method of manufacturing semiconductor device
21 Sep 20
A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements.
Takashi Shiigi, Shoji Yamada, Yuichi Harada, Yasuyuki Hoshi
Filed: 29 Sep 16
Utility
Photoreceptor for electrophotography, method for manufacturing the same, and electrophotographic device
21 Sep 20
A photoreceptor for electrophotography, a method for manufacturing the photoreceptor, and an electrophotographic device including the photoreceptor are disclosed.
Fengqiang Zhu, Shinjiro Suzuki, Toshiki Takeuchi
Filed: 1 Oct 17
Utility
Semiconductor device
14 Sep 20
Provided is a semiconductor device having: a terminal portion having a through hole is formed on a principal surface portion; and a casing portion in which an opening to make the principal surface portion of the terminal portion exposed is provided, wherein the opening has a corner portion corresponding to a corner of the principal surface portion of the terminal portion, wherein the casing portion has a thick portion, in which thickness of a resin may be greater than that of a middle portion between adjacent corner portions across two sides forming the corner portion, in a surrounding area of the opening.
Yoshihiro Kodaira
Filed: 20 Dec 18
Utility
Semiconductor device
14 Sep 20
An IGBT region in which an IGBT is disposed and a FWD region in which a FWD connected in antiparallel to the IGBT is disposed are provided in an active region of a semiconductor chip.
Tohru Shirakawa
Filed: 20 Jun 19
Utility
Insulated gate semiconductor device and method of manufacturing same
14 Sep 20
An insulated gate semiconductor device includes p+ gate bottom protection regions embedded in a drift layer at the bottoms of trenches that goes through n+ source regions and p-type base regions, and p+ base bottom embedded regions embedded in the drift layer below the base regions.
Keiji Okumura
Filed: 19 Aug 19
Utility
Semiconductor device
14 Sep 20
A semiconductor device includes: an active area including a drift layer of a first conductivity type; and a voltage blocking area arranged around the active area and including an field relaxation region having a second conductivity type, being provided in an upper portion of the drift layer, wherein a depth of the field relaxation region decreases toward outside, and a spatial-modulation portion is provided at an outer end of the field relaxation region.
Keiji Okumura
Filed: 26 Sep 18
Utility
Three-phase inverter with reduced DC bus capacitor ripple
14 Sep 20
A three-phase inverter includes three series circuits that are connected in parallel to a capacitor connected in parallel to a DC voltage source.
Junichi Itoh, Koroku Nishizawa, Akio Toba, Akihiro Odaka
Filed: 18 Feb 19
Utility
Semiconductor integrated circuit
7 Sep 20
A semiconductor integrated circuit includes: a p−-type semiconductor substrate defining a high-potential side circuit area and a low-potential side circuit area separated from each other; a high-side n well provided in an upper part of the semiconductor substrate in the high-potential side circuit area; a high-side p well provided in the high-side n well; and a p-type semiconductor region provided in an upper part of the semiconductor substrate in the low-potential side circuit area; and n+-type semiconductor region provided to be brought contact with the p-type semiconductor region, wherein a whole n-type semiconductor region including the n+-type semiconductor region, has an impurity concentration higher than an impurity concentration of the high-side n well.
Takahide Tanaka
Filed: 24 Oct 18
Utility
Semiconductor device having an emitter region and a contact region inside a mesa portion
7 Sep 20
A semiconductor device is provided that has a semiconductor substrate, a drift layer of a first conductivity type formed in the semiconductor substrate, a base region of a second conductivity type formed in the semiconductor substrate and above the drift layer, and an accumulation region of the first conductivity type provided between the drift layer and the base region and having an impurity concentration higher than an impurity concentration in the drift layer, wherein the accumulation region has a first accumulation region and a second accumulation region that is formed more shallowly than the first accumulation region is and on a side of a boundary with a region that is different from the accumulation region in a planar view.
Yuichi Onozawa, Kota Ohi
Filed: 31 Jan 18
Utility
Semiconductor device
7 Sep 20
A semiconductor device including a semiconductor substrate is provided.
Soichi Yoshida, Hiroshi Miyata
Filed: 24 Jan 19
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
7 Sep 20
A silicon nitride film having a thickness in a range from 1 [nm] to 3 [nm] is deposited on a front surface of a silicon carbide semiconductor base, by an ALD method.
Tsuyoshi Araoka, Mitsuo Okamoto, Yohei Iwahashi
Filed: 14 Feb 19
Utility
Semiconductor device
7 Sep 20
A first side wall and a second side wall of a trench are each an a-plane having high carrier mobility.
Yusuke Kobayashi, Manabu Takei, Shinsuke Harada, Naoki Kumagai
Filed: 21 Jul 19
Utility
Semiconductor device
7 Sep 20
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth.
Yusuke Kobayashi, Manabu Takei, Naoki Kumagai
Filed: 21 Jul 19
Utility
Overcurrent protection device for semiconductor device
7 Sep 20
The overcurrent protection device includes: a current detection unit configured to detect, as a sense voltage, a sense current flowing through a current sense terminal of a voltage-controlled semiconductor device; an overcurrent detection unit configured to compare the sense voltage detected by the current detection unit with an overcurrent threshold value to output an overcurrent detection signal; a mode determination unit configured to determine whether a superposition mode in which a transient sense voltage is superimposed on the sense voltage or a normal mode in which the transient sense voltage is not superimposed on the sense voltage; and a timing adjustment unit configured to adjust a detection start timing of the overcurrent detection signal based on a result of determination by the mode determination unit.
Kei Minagawa
Filed: 21 Jan 18
Utility
Operational amplifier circuit and current detection device using the same
7 Sep 20
An operational amplifier circuit includes a potential control circuit connected between a current sense semiconductor element connected in parallel with a main semiconductor element and a current detection resistor.
Motomitsu Iwamoto
Filed: 21 Jan 19
Utility
Comparator and oscillator circuit using said comparator
7 Sep 20
Oscillator circuit uses a comparator, and controls charge-discharge of Miller capacitance between gate and drain of a MOSFET serving as an amplifier of the comparator gain unit and gate capacitance of the MOSFET, and enables comparator output to follow a high-frequency control signal that is input externally.
Kenji Nakagomi
Filed: 1 Dec 19
Utility
Gate driving circuit and switching power supply apparatus
7 Sep 20
A gate driving circuit that drives a gate of a main switching device is provided, where the gate driving circuit includes: a first resistor connected between a first potential and the gate of the main switching device; a second resistor connected between a second potential being lower than the first potential and the gate of the main switching device; a first switching device connected in series with the first resistor between the first potential and the gate of the main switching device; a second switching device connected in series with the second resistor between the second potential and the gate of the main switching device; and a control circuit that changes at least one resistance value of a resistance value of the first resistor and a resistance value of the second resistor according to a length of an ON period during which the main switching device is turned on.
Hirotoshi Kaneda
Filed: 23 Apr 19