997 patents
Page 23 of 50
Utility
Semiconductor device
28 Sep 21
A region of a portion directly beneath an OC pad is a sensing effective region where unit cells of a current sensing portion are disposed.
Yasuyuki Hoshi
Filed: 2 Mar 20
Utility
Semiconductor device
28 Sep 21
In a semiconductor device, a first outer edge of a conductive pattern is located between the outermost edge of a first dimple and the innermost edge of a second dimple in a cross-sectional view of the device.
Yoshinori Uezato
Filed: 25 Feb 20
Utility
Switching control circuit
28 Sep 21
A switching control circuit that controls switching of a switching device of a bridge circuit for driving a load.
Masashi Akahane
Filed: 22 Sep 20
Utility
Semiconductor device having terminal pin connected by connecting member and method of manufacturing semiconductor device
28 Sep 21
A semiconductor device includes: an insulation circuit substrate including a metal layer and an insulation substrate, the metal layer being formed on one surface of the insulation substrate, a connecting member having a cylindrical shape joined to the metal layer via a bonding material, a terminal pin inserted in the connecting member, and a reinforcement member having a cylindrical shape disposed on an outer periphery of the connecting member.
Yuichiro Hinata, Tatsuo Nishizawa
Filed: 26 Jul 19
Utility
Semiconductor module, vehicle and manufacturing method
21 Sep 21
A semiconductor module comprises a semiconductor apparatus and a cooling apparatus.
Nobuhide Arai
Filed: 27 Oct 19
Utility
Printed board and semiconductor device
21 Sep 21
A semiconductor device implements upper and lower arms for three phases by a plurality of semiconductor chips, an insulated circuit board, and a printed board, the printed board includes: a plurality of upper relay pattern layers arranged on one main surface of an insulating layer; an upper common pattern layer arranged on the one main surface of the insulating layer; a plurality of lower relay pattern layers arranged to be opposed to the upper relay pattern layers on another main surface opposite to the one main surface of the insulating layer; and a lower common pattern layer arranged to be opposed to the upper common pattern layer on the other main surface of the insulating layer, and control wires electrically connected to the semiconductor chips are partly provided in regions between the upper relay pattern layers and the upper common pattern layer.
Hideyo Nakamura
Filed: 1 Jun 20
Utility
Semiconductor device and method of manufacturing semiconductor device
21 Sep 21
At edge termination region, a trench is disposed near an interface of an active region.
Wentao Yang, Johnny Kin On Sin, Yuichi Onozawa, Kaname Mitsuzuka
Filed: 25 Apr 17
Utility
Semiconductor device and method for manufacturing the same
21 Sep 21
A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.
Hitoshi Abe, Hiroshi Miyata, Hidenori Takahashi, Seiji Noguchi, Naoya Shimada
Filed: 26 Jan 17
Utility
Semiconductor integrated circuit
21 Sep 21
A semiconductor integrated circuit includes a semiconductor power switch element configured to drive an inductive load, a load current sensing circuit configured to sense a load current of the inductive load, a logic circuit configured to output a logic signal responsive to the load current sensing circuit sensing a drop in the load current while the semiconductor power switch element is turned on, a gate voltage pull-down circuit configured to pull down a gate voltage of the semiconductor power switch element upon receiving the logic signal, a clamp diode disposed between a gate of the semiconductor power switch element and a high-potential terminal connected to the inductive load, and a clamp withstand voltage drop circuit configured to switch a first withstand voltage of the clamp diode to a second withstand voltage, which is lower than the first withstand voltage, upon receiving the logic signal.
Takanori Kohama
Filed: 24 Jan 20
Utility
Magnetic recording medium having tin containing seed layer
14 Sep 21
A magnetic recording medium with a reduced average grain diameter and reduced grain diameter dispersion is provided.
Hiroyasu Kataoka, Tsuyoshi Yoshizawa, Tomohiro Moriya, Shinji Uchida, Hirohisa Oyama, Takehito Shimatsu
Filed: 27 Feb 19
Utility
Wire bonding tool including a wedge tool
14 Sep 21
A bonding tool includes a wedge tool that presses a bonding wire against a principal plane of a structure such as an electrode to which the bonding wire is to be bonded.
Takanori Sugiyama, Yosuke Miyazawa
Filed: 30 Jul 18
Utility
Semiconductor device
14 Sep 21
Unit cells of a current sensing portion are disposed in a sensing effective region of a main non-operating region.
Yasuyuki Hoshi
Filed: 2 Mar 20
Utility
Semiconductor device
14 Sep 21
In an effective region of an active region, a main semiconductor element and a source pad thereof are disposed.
Yoshihisa Suzuki, Keishirou Kumada, Yasuyuki Hoshi, Yuichi Hashizume
Filed: 26 Sep 19
Utility
Control apparatus of switching power supply for generating drive signal of incremental on-width
14 Sep 21
A control apparatus of a current resonance type switching power supply that has a switching element and generates an output voltage.
Jian Chen, Kiminori Tanaka
Filed: 29 Jan 20
Utility
Semiconductor device
14 Sep 21
In a semiconductor device using, as a FWD, a diode formed in a silicon carbide (SiC) substrate, while preventing gate oscillation, an increase of switching loss is suppressed at the time of a temperature increase also.
Kunio Kobayashi
Filed: 26 Feb 19
Utility
Apparatus and calculating method of pH
14 Sep 21
A human load of regularly measuring a pH of a position 4 meters from a discharge point during a term of a commissioning of a ship with a scrubber apparatus is reduced.
Hiroyuki Toyama, Kuniyuki Takahashi
Filed: 24 Oct 19
Utility
Dummy element and method of examining defect of resistive element
7 Sep 21
A dummy element includes: a semiconductor substrate; a lower insulating film deposited on the semiconductor substrate; a first resistive layer deposited on the lower insulating film; an interlayer insulating film covering the first resistive layer; a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer, and including an extending portion to be in Schottky contact with the semiconductor substrate; a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact; and a counter electrode allocated under the semiconductor substrate, the dummy element simulating a defective state in the lower insulating film and the interlayer insulating film immediately under the first pad-forming electrode included in a corresponding resistive element as a target to be examined.
Osamu Sasaki, Masaru Saito, Taichi Karino
Filed: 27 Jun 19
Utility
Resistive element and method of manufacturing the same
7 Sep 21
A resistive element includes: a semiconductor substrate; a field insulating film deposited on the semiconductor substrate; a plurality of resistive layers separately deposited on the field insulating film; an interlayer insulating film deposited to cover the field insulating film and the resistive layers; a pad-forming electrode deposited on the interlayer insulating film, and electrically connected to one edges of the resistive layers; a relay wire deposited on the interlayer insulating film separately from the pad-forming electrode, and including a first terminal electrically connected to another edges of the resistive layers and a second terminal provided so as to form an ohmic contact to the semiconductor substrate; and a rear surface electrode provided under the semiconductor substrate to form an ohmic contact to the semiconductor substrate, wherein the resistive element uses, as a resistor, an electric channel between the pad-forming electrode and the rear surface electrode.
Taichi Karino
Filed: 23 Apr 20
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
7 Sep 21
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate, a first semiconductor layer and a first semiconductor region each of a first conductivity type, and a first base region, a second semiconductor layer and a second semiconductor region each of a second conductivity type.
Keiji Okumura
Filed: 2 Mar 20
Utility
Power converter
7 Sep 21
A power converter includes a plurality of power conversion units connected to one another in parallel, each including an AC/DC converter (rectifier) that converts AC power from an AC input power supply (commercial power supply) into DC power, a DC/DC converter (DC power converter) that converts the DC power from the AC/DC converter, and a current detector that detects charge current flowing from the DC/DC converter as well as discharge current flowing to the DC/DC converter.
Hiroki Muratsu
Filed: 6 Jun 19