997 patents
Page 20 of 50
Utility
Resistance element and manufacturing method of resistance element
30 Nov 21
Provided is a resistance element, including: a semiconductor substrate; a first insulating film stacked on the semiconductor substrate; a resistance layer selectively stacked on the first insulating film; a first auxiliary film separated from the resistance layer; a second auxiliary film separated from the resistance layer in a direction different from that of the first auxiliary film; a second insulating film stacked on the first insulating film to cover the resistance layer, and the first auxiliary film and the second auxiliary film; a first electrode connected to the resistance layer and stacked on the second insulating film disposed on an upper side of the first auxiliary film; and a second electrode connected to the resistance layer by being separated from the first electrode and stacked on the second insulating film on the upper side of the second auxiliary film.
Masaru Saito, Masaharu Yamaji, Osamu Sasaki, Hitoshi Sumida
Filed: 27 Jun 19
Utility
Beverage extraction device
30 Nov 21
A beverage extraction device includes a mesh member, a cover member that is movable between a first position and a second position; a scraper portion, an upper end portion of which is pivotally supported by the cover member with a lower end portion of the scraper portion being swingable along a vertical direction, that takes a basic attitude in which the lower end portion is positioned lower than the upper end portion under a normal condition, the lower end portion being configured to slide on the mesh member when the cover member is moved from the first position toward the second position; and a contact member configured to come into contact with the scraper portion sliding on the mesh member to cause the scraper portion to take an attitude in which the lower end portion swings upward when the cover member approaches the second position.
Yohei Nishikawa
Filed: 26 Mar 19
Utility
Semiconductor integrated circuit
23 Nov 21
A semiconductor integrated circuit including a power switch element, a control circuit connected to the power switch element, an electrostatic discharge protection device connected to an input terminal to which an input voltage is applied, for protecting the power switch element and the control circuit from being damaged by an electrostatic discharge, and a short-to-supply fault protection circuit connected to the electrostatic discharge protection device, for protecting the power switch element and the control circuit from being damaged by a high voltage.
Takanori Kohama
Filed: 29 Jan 20
Utility
Automatic vending machine
23 Nov 21
An automatic vending machine includes a product housing rack including a plurality of product housing shelves that are disposed in an up-down direction, a plurality of product housing paths corresponding to the plurality of product housing shelves, each product housing path being defined in the corresponding product housing shelf and configured to house products, a plurality of product discharge devices corresponding to the plurality of product housing shelves and the plurality of product housing paths, each product discharge device being configured to separate and discharge, one by one, the products that are housed in the corresponding product housing path.
Katsuhiko Fukuda, Tsutomu Iwako, Yasuo Nakazato, Yasuhiro Yamazaki, Takashi Nishiyama
Filed: 1 Jul 20
Utility
Semiconductor device
23 Nov 21
A semiconductor device is provided.
Takahiro Tamura, Yuichi Onozawa, Misaki Takahashi
Filed: 20 Jul 20
Utility
Silicon carbide semiconductor device, silicon carbide semiconductor assembly, and method of manufacturing silicon carbide semiconductor device
23 Nov 21
A silicon carbide semiconductor device including a semiconductor substrate containing silicon carbide, a contact electrode, which is a silicide layer containing nickel, provided on a surface of the semiconductor substrate and forming an ohmic contact with the semiconductor substrate, and a metal connection layer provided on a surface of the contact electrode.
Makoto Utsumi, Yoshiyuki Sakai
Filed: 27 Sep 19
Utility
Semiconductor device and method of manufacturing semiconductor device
23 Nov 21
A semiconductor device including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided at a front surface of the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a first semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer and having an impurity concentration higher than that of the semiconductor substrate, a trench penetrating the first semiconductor region and the second semiconductor layer, to reach the first semiconductor layer, and a gate electrode provided in the trench, via a gate insulating film.
Tae Tawara, Shinji Fujikake, Aki Takigawa, Hidekazu Tsuchida, Koichi Murata
Filed: 3 Aug 20
Utility
Control circuit and semiconductor device
23 Nov 21
A control circuit controlling to drive a switching device includes a first detection circuit that detects whether a power supply voltage received by a drive circuit that drives the switching device drops below a first level, a second detection circuit that receives a current flowing through the switching device and detects whether the current exceeds a first value, and an abnormality detection circuit that causes the drive circuit to turn off the switching device, based on whether a condition that the power supply voltage is lower than the first level and the current flowing through the switching device is larger than the first value is satisfied.
Shinichi Tezuka
Filed: 22 Sep 20
Utility
Semiconductor device with carrier lifetime control
23 Nov 21
A semiconductor device includes a semiconductor substrate including a drift region of a first conductivity type, a transistor portion provided in the substrate, and an adjacent element portion provided in the substrate, the adjacent element and transistor portions being arranged along an arrangement direction.
Tatsuya Naito
Filed: 24 Oct 19
Utility
Insulated-gate semiconductor device and method of manufacturing the same
16 Nov 21
An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.
Keiji Okumura
Filed: 9 Apr 20
Utility
Lead frame, semiconductor device, and method for manufacturing semiconductor device
16 Nov 21
A lead frame is provided with a die pad portion, a first lead portion, a second lead portion, and an extension portion extending from a corner portion neighborhood of the die pad portion to the outside of the die pad portion.
Keisuke Tabira, Kenpei Nakamura, Mitsuaki Matsuse, Hiroaki Furihata
Filed: 25 Sep 19
Utility
Semiconductor device having case to which circuit board is bonded by bonding material and method of manafacturing thereof
16 Nov 21
A semiconductor device includes a circuit board including an insulating layer having opposite front and rear surfaces, an electrode pad disposed on the front surface, a housing having an installation area for the circuit board, and a bonding material embedded in a recess within either a first area located at the rear surface of the insulating layer directly below an area of the circuit board in which the electrode pad is disposed, or at a second area located within the installation area of the housing and corresponding to the first area in a plan view.
Tatsuya Karasawa
Filed: 28 Aug 19
Utility
Method of manufacturing semiconductor device
16 Nov 21
A flat plate frame is formed, which is flat plate-shaped, which has an opening penetrating its front and rear surfaces and groove terminal patterns formed on its front surface, and which contains a semi-cured thermosetting resin.
Toshio Denta, Yuji Ichimura
Filed: 31 Mar 20
Utility
Semiconductor device
16 Nov 21
A semiconductor device having, in a main non-operating region that is free of unit cells of a main semiconductor element, a gate insulating film and a gate electrode of a current sensing portion extending on a front surface of a semiconductor substrate, to thereby form a planar gate structure.
Yasuyuki Hoshi
Filed: 23 Apr 20
Utility
Semiconductor device
16 Nov 21
A semiconductor device, including a first conductive portion including a first conducting region and a first wiring region communicating with the first conducting region via a first communicating portion, a second conductive portion including a second conducting region and a second wiring region that communicates with the second conducting region via a second communicating portion and that faces the first wiring region with a prescribed space therebetween, and a wiring member electrically connecting the first wiring region and the second wiring region in a wiring direction.
Makoto Isozaki, Seiichi Takahashi
Filed: 26 May 20
Utility
Uninterrupted power supply apparatus
16 Nov 21
An uninterrupted power supply apparatus includes a plurality of uninterrupted power supply modules each including a converter, a chopper, and an inverter, and a first control unit configured to output an voltage indication and phase information for controlling timing of switching operations of switching devices in the chopper and the inverter, wherein each of the uninterrupted power supply modules includes a second control unit that is configured to generate a first triangular carrier in synchronization with the phase information, to generate a second triangular carrier such that a phase of the second triangular carrier is synchronized with a phase of the first triangular carrier, the first triangular carrier being used with the voltage indication to control switching operations of the switching devices in the inverter, the second triangular carrier being used with the voltage indication to control switching operations of the switching devices in the chopper.
Satoshi Ishida
Filed: 25 Aug 20
Utility
Semiconductor device and semiconductor device manufacturing method
16 Nov 21
A semiconductor device, including an insulated circuit board that has a radiation plate, a resin board adhered to a front surface of the radiation plate, and a circuit pattern adhered to a front surface of the resin board.
Hiroki Kogawa
Filed: 29 Oct 20
Utility
Semiconductor device and method of manufacturing semiconductor device
9 Nov 21
In a contact hole of an interlayer insulating film, a tungsten film forming a contact plug is embedded via a barrier metal.
Takaaki Suzawa
Filed: 22 Oct 19
Utility
Semiconductor device and method for manufacturing the same
9 Nov 21
Yuichiro Hinata, Tatsuo Nishizawa
Filed: 26 Feb 20
Utility
Semiconductor device
9 Nov 21
The semiconductor device includes a substrate having a main surface, a plurality of conductive patterns provided on the main surface, a plurality of switching elements disposed on one of the conductive patterns, each switching element having a first electrode and a second electrode and being connected to the one of the conductive patterns through its first or second electrode, and at least one first wiring member each directly connecting the first electrodes of two switching elements that are respectively disposed on different conductive patterns and are electrically connected in parallel.
Shunta Horie, Susumu Iwamoto
Filed: 27 Aug 20