997 patents
Page 16 of 50
Utility
Semiconductor device
22 Mar 22
A semiconductor device includes an enhancement mode MOSFET and a junction FET.
Takeyoshi Nishimura
Filed: 31 Mar 21
Utility
Uninterruptible power supply
22 Mar 22
An uninterruptible power supply includes a first detector provided on an input side of a power converter, the first detector detecting a first detection value that is a value of a voltage or current, and a second detector provided on an AC power supply side relative to the first detector, the second detector detecting a second detection value that is a value of a voltage or current input to the uninterruptible power supply module.
Yasuhiro Tamai
Filed: 30 Dec 20
Utility
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22 Mar 22
A semiconductor device includes a power semiconductor chip, a threshold setting unit and a breaker circuit.
Shigemi Miyazawa
Filed: 30 Mar 20
Utility
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22 Mar 22
A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.
Sho Nakagawa
Filed: 21 Apr 21
Utility
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15 Mar 22
A semiconductor device, comprising a first MOS structure region, a second MOS structure region, a first temperature sensing region, and a second temperature sensing region.
Yasuyuki Hoshi
Filed: 30 Nov 20
Utility
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15 Mar 22
A semiconductor device has a configuration wherein a resistor that restricts overvoltage is inserted between an input terminal and the drain of JFETs, and the resistor is disposed on the JFETs.
Masaru Saito
Filed: 6 Jul 15
Utility
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15 Mar 22
There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.
Kosuke Yoshida
Filed: 23 Apr 20
Utility
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15 Mar 22
A silicon carbide semiconductor device includes an insulated-gate electrode structure that is formed inside a gate trench that goes through a base region and reaches a upper portion of a current transport layer to control a primary current flowing through the base region; a current suppression layer of the second conductivity type embedded within an upper portion of the current transport layer; a control electrode isolation insulating film filled into a control electrode isolation trench that goes through the base region and reaches an upper portion of the current suppression layer; and a control electrode pad disposed on the control electrode isolation insulating film, wherein an upper portion of the current suppression layer abuts a sidewall of the control electrode isolation insulating film, and a lower portion of the current suppression layer covers at least bottom corners of the control electrode isolation insulating film.
Keiji Okumura
Filed: 6 Nov 18
Utility
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15 Mar 22
A semiconductor device is provided, which includes a semiconductor substrate, a transistor section and a diode section.
Tatsuya Naito
Filed: 21 Apr 20
Utility
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15 Mar 22
A semiconductor device having a metal oxide semiconductor that includes a semiconductor substrate, a first semiconductor layer provided on a the semiconductor substrate, a plurality of second semiconductor layers selectively provided on the first semiconductor layer, a plurality of first semiconductor regions selectively provided in the second semiconductor layers at a surface thereof, a plurality of gate insulating films with a plurality of gate electrodes provided thereon, a plurality of first electrodes provided on the second semiconductor layers and the first semiconductor regions, and a second electrode provided on a back surface of the semiconductor substrate.
Yasuyuki Hoshi
Filed: 27 Nov 20
Utility
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15 Mar 22
An abnormality cause identifying method that is applied to a computer is provided.
Kazuyoshi Umezawa, Satoshi Ishida, Motohiro Tsukuta, Yasuyuki Noto
Filed: 24 Dec 19
Utility
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8 Mar 22
A semiconductor device, including a semiconductor element, and a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element.
Ryoji Okumoto
Filed: 27 Sep 19
Utility
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8 Mar 22
A semiconductor device, including a semiconductor chip having a first main electrode on a front surface thereof, the first main electrode having a plurality of bonded regions, and a plurality of wires that are bonded respectively to the plurality of bonded regions of the first main electrode.
Masaki Takahashi
Filed: 30 Sep 20
Utility
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8 Mar 22
A silicon carbide semiconductor device includes a gate insulating film and a gate electrode made of p+ polysilicon doped with boron at a high concentration.
Tsuyoshi Araoka
Filed: 5 Aug 20
Utility
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8 Mar 22
A semiconductor device including a silicon carbide semiconductor substrate having a first-conductivity-type region at its first main surface.
Naoyuki Ohse, Takahito Kojima
Filed: 29 Jul 20
Utility
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8 Mar 22
A power supply circuit, including a rectifier circuit, an inductor having a voltage from the rectifier circuit applied thereto, a transistor for controlling a current flowing through the inductor, and an integrated circuit that performs switching of the transistor.
Nobuyuki Hiasa
Filed: 21 May 20
Utility
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8 Mar 22
A gate drive circuit includes: a drive unit configured to drive a gate of a main circuit element including a majority carrier device; and a drive capability change unit configured to cause the drive unit to increase a drive capability of turning on the main circuit element as a main circuit current that flows through the main circuit element decreases.
Hong-Fei Lu
Filed: 29 Jun 20
Utility
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8 Mar 22
Provided is a gate drive device, including: a gate drive unit for driving a gate of a switching element; a measurement unit for measuring a parameter that changes according to a current flowing through the switching element; and a switching unit for switching a changing speed of a gate voltage of the switching element by the gate driving unit after a first reference period from a start of turning off the switching element based on the parameter.
Kunio Matsubara, Tsuyoshi Nagano
Filed: 24 Feb 21
Utility
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1 Mar 22
A semiconductor device is manufactured by implanting impurity ions in one surface of a semiconductor substrate made of silicon carbide; irradiating a region of the semiconductor substrate implanted with the impurity ions with laser light of a wavelength in the ultraviolet region; and forming, on a surface of a high-concentration impurity layer formed by irradiating with the laser light, an electrode made of metal in ohmic contact with the high-concentration impurity layer.
Kenichi Iguchi, Haruo Nakazawa
Filed: 1 Aug 19
Utility
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1 Mar 22
A silicon carbide semiconductor device, including a semiconductor substrate having first and second semiconductor regions and a plurality of third semiconductor regions sequentially formed therein, a plurality of trenches penetrating the second and third semiconductor regions, a plurality of gate electrodes provided in the trenches via a gate insulating film, an interlayer insulating film covering the gate electrodes, a plurality of contact holes penetrating the interlayer insulating film, a first electrode provided in the contact holes and at the surface of the interlayer insulating film, and a second electrode electrically connected to the first semiconductor region.
Setsuko Wakimoto
Filed: 24 Aug 20