386 patents
Utility
Systems and methods for production of silicon using a horizontal magnetic field
16 Jan 24
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot.
JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
Filed: 8 Dec 20
Utility
Ingot puller apparatus having heat shields with voids therein
16 Jan 24
Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed.
Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
Filed: 7 Oct 21
Utility
Crystal Growth Method and Wafer
11 Jan 24
A crystal growth method, including providing a seed crystal in a crystal growth furnace, and forming a crystal on the seed crystal along a first direction after multiple time points, is provided.
Ching-Shan Lin, Ye-Jun Wang, Chien-Cheng Liou
Filed: 30 Jun 23
Utility
Method of Growing Silicon Carbide Crystals
11 Jan 24
A method of growing the silicon carbide crystal includes the following steps.
Ching-Shan Lin
Filed: 30 Jun 23
Utility
Crystal Growth Furnace System
11 Jan 24
A crystal growth furnace system, including an external heating module, a furnace, a first driven device, a second driven device, and a control device, is provided.
Ching-Shan Lin, Ye-Jun Wang, Chien-Cheng Liou
Filed: 30 Jun 23
Utility
Crystal Growing Method for Crystals
11 Jan 24
A crystal growing method for crystals include the following steps.
Ching-Shan Lin
Filed: 30 Jun 23
Utility
Silicon Carbide Crystals and Silicon Carbide Wafer
11 Jan 24
A silicon carbide crystal and a silicon carbide wafer, wherein a monocrystalline proportion of the silicon carbide crystal and the silicon carbide wafer is 100%, the resistivity thereof is in a range of 15 mΩ·cm to 20 mΩ·cm, and a deviation of an uniformity of the resistivity thereof is less than 0.4%.
Ching-Shan Lin
Filed: 30 Jun 23
Utility
Methods for producing a single crystal silicon ingot using a vaporized dopant
9 Jan 24
A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20
Utility
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
9 Jan 24
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed.
Matteo Pannocchia, Maria Porrini
Filed: 6 Jan 22
Utility
Non-contact Systems and Methods for Determining Distance Between Silicon Melt and Reflector In a Crystal Puller
4 Jan 24
A measurement system includes a target object at least partially visible through an opening in a crystal puller.
Richard Joseph Phillips
Filed: 27 Jun 23
Utility
Susceptor for Epitaxial Processing and Epitaxial Reactor Including the Susceptor
4 Jan 24
A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces.
Manabu Hamano, Chun-Chin Tu
Filed: 1 Jun 23
Utility
Material analysis method
2 Jan 24
A material analysis method is provided.
Shang-Chi Wang, Wen-Ching Hsu, Chia-Chi Tsai, I-Ching Li
Filed: 4 May 22
Utility
Manufacturing method of silicon carbide ingot
2 Jan 24
A manufacturing method of a silicon carbide ingot includes the following.
Ching-Shan Lin
Filed: 27 Jul 21
Utility
Method for collecting dust from single crystal growth system and dust collecting system thereof
19 Dec 23
A dust collecting system for single crystal growth system includes an air compressor, a dust collecting device, a first inert gas source, a rotary pump and a scrubber.
Masami Nakanishi, Yu-Sheng Su, I-Ching Li
Filed: 22 Jun 20
Utility
Systems and methods for enhanced wafer manufacturing
19 Dec 23
A computer device includes at least one processor in communication with at least one memory device.
Sumeet S. Bhagavat
Filed: 6 Jul 22
Utility
Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
19 Dec 23
A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.
Sasha Joseph Kweskin, Henry Frank Erk
Filed: 3 Mar 17
Utility
Systems and Methods for Controlling Surface Profiles of Wafers Sliced In a Wire Saw
7 Dec 23
Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine.
Sumeet S. Bhagavat, Carlo Zavattari, Peter D. Albrecht, William L. Luter
Filed: 1 Jun 23
Utility
Methods for Forming Single Crystal Silicon Ingots with Reduced Carbon Contamination and Susceptors for Use In Such Methods
7 Dec 23
A graphite susceptor for supporting a quartz crucible during a crystal growth process includes a body having an interior surface and a coating deposited onto the interior surface.
Richard J. Phillips, William Luter, Carissima Marie Hudson, JaeWoo Ryu
Filed: 31 May 23
Utility
Wafer
5 Dec 23
Provided is a wafer including a ring part and a processed part.
Chan-Ju Wen, Chih-Wei Chang, Su Lien Chou
Filed: 24 Jan 22
Utility
Novel Buffer Layer Structure to Improve Gan Semiconductors
23 Nov 23
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and 0≤y≤1; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Jia-Zhe Liu, Chih-Yuan Chuang, Po Jung Lin, Hong Che Lin
Filed: 14 Jul 23