386 patents
Page 4 of 20
Utility
Buffer layer structure to improve GaN semiconductors
18 Jul 23
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
Filed: 19 Dec 18
Utility
Methods for Forming a Unitized Crucible Assembly
13 Jul 23
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 7 Mar 23
Utility
High resistivity semiconductor-on-insulator wafer and a method of manufacture
11 Jul 23
A semiconductor on insulator multilayer structure is provided.
Igor Peidous, Lu Fei, Jeffrey L. Libbert, Andrew M. Jones, Alex Usenko, Gang Wang, Shawn George Thomas, Srikanth Kommu
Filed: 25 Aug 21
Utility
Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability
6 Jul 23
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 13 Mar 23
Utility
Novel Buffer Layer Structure to Improve Gan Semiconductors
6 Jul 23
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
Filed: 9 Mar 23
Utility
Semiconductor Structure
6 Jul 23
A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided.
Po Jung Lin, Ying-Ru Shih, Chenghan Tsao
Filed: 21 Oct 22
Utility
Methods for Growing Single Crystal Silicon Ingots That Involve Silicon Feed Tube Inert Gas Control
6 Jul 23
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed.
Matteo Pannocchia, Maria Porrini
Filed: 6 Jan 22
Utility
Ingot Puller Apparatus Having a Flange That Extends from the Funnel or from the Silicon Feed Tube
6 Jul 23
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed.
Matteo Pannocchia, Maria Porrini
Filed: 6 Jan 22
Utility
Ingot Evaluation Method and Detecting Apparatus
29 Jun 23
An ingot evaluation method and a detecting apparatus are provided.
Hsiu Chi Liang
Filed: 31 Oct 22
Utility
Polishing Head Assembly Having Recess and Cap
29 Jun 23
A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap.
Chih Yuan Hsu, Jen Chieh Lin, Chieh Hu, Wei Chang Huang, Yau-Ching Yang
Filed: 14 Dec 22
Utility
Method of manufacturing epitaxy substrate
27 Jun 23
A method of manufacturing an epitaxy substrate is provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 14 Jul 21
Utility
High Resistivity Silicon-on-insulator Substrate Comprising an Isolation Region
25 May 23
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 23 Jan 23
Utility
Method for Producing Silicon Ingot Single Crystal
25 May 23
A method for producing Si ingot single crystal including a Si ingot single crystal growing step, a temperature gradient controlling step and a continuous growing step is provided.
Kazuo Nakajima, Masami Nakanishi, Yu Sheng Su, Wen-Ching Hsu
Filed: 12 Oct 22
Utility
Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid As a Dopant
25 May 23
Methods for producing a single crystal silicon ingot are disclosed.
William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
Filed: 9 Jan 23
Utility
Ingot Puller Apparatus That Use a Solid-phase Dopant
25 May 23
Methods for producing a single crystal silicon ingot are disclosed.
William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
Filed: 9 Jan 23
Utility
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
23 May 23
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Filed: 10 Sep 21
Utility
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
23 May 23
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, Hyungmin Lee, Byungchun Kim, Robert J. Falster
Filed: 10 Sep 21
Utility
Crystal Pulling Systems Having a Cover Member for Covering the Silicon Charge
18 May 23
Crystal pulling system having a housing and a crucible assembly are disclosed.
Paolo Tosi, Matteo Pannocchia, Roberto Scala
Filed: 4 Jan 23
Utility
Determination of Mass/time Ratios for Buffer Members Used During Growth of Single Crystal Silicon Ingots
11 May 23
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed.
Matteo Pannocchia, Francesca Marchese, James Ho Wai Kitt
Filed: 13 Jan 23
Utility
Use of Arrays of Quartz Particles During Single Crystal Silicon Ingot Production
11 May 23
Methods for producing single crystal silicon ingots in which an array of quartz particles are added to the crucible assembly before ingot growth are disclosed.
Richard Joseph Phillips, Carissima Marie Hudson
Filed: 12 Oct 22