229 patents
Utility
Crystal Growth Method and Wafer
11 Jan 24
A crystal growth method, including providing a seed crystal in a crystal growth furnace, and forming a crystal on the seed crystal along a first direction after multiple time points, is provided.
Ching-Shan Lin, Ye-Jun Wang, Chien-Cheng Liou
Filed: 30 Jun 23
Utility
Method of Growing Silicon Carbide Crystals
11 Jan 24
A method of growing the silicon carbide crystal includes the following steps.
Ching-Shan Lin
Filed: 30 Jun 23
Utility
Crystal Growth Furnace System
11 Jan 24
A crystal growth furnace system, including an external heating module, a furnace, a first driven device, a second driven device, and a control device, is provided.
Ching-Shan Lin, Ye-Jun Wang, Chien-Cheng Liou
Filed: 30 Jun 23
Utility
Crystal Growing Method for Crystals
11 Jan 24
A crystal growing method for crystals include the following steps.
Ching-Shan Lin
Filed: 30 Jun 23
Utility
Silicon Carbide Crystals and Silicon Carbide Wafer
11 Jan 24
A silicon carbide crystal and a silicon carbide wafer, wherein a monocrystalline proportion of the silicon carbide crystal and the silicon carbide wafer is 100%, the resistivity thereof is in a range of 15 mΩ·cm to 20 mΩ·cm, and a deviation of an uniformity of the resistivity thereof is less than 0.4%.
Ching-Shan Lin
Filed: 30 Jun 23
Utility
Non-contact Systems and Methods for Determining Distance Between Silicon Melt and Reflector In a Crystal Puller
4 Jan 24
A measurement system includes a target object at least partially visible through an opening in a crystal puller.
Richard Joseph Phillips
Filed: 27 Jun 23
Utility
Susceptor for Epitaxial Processing and Epitaxial Reactor Including the Susceptor
4 Jan 24
A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces.
Manabu Hamano, Chun-Chin Tu
Filed: 1 Jun 23
Utility
Systems and Methods for Controlling Surface Profiles of Wafers Sliced In a Wire Saw
7 Dec 23
Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine.
Sumeet S. Bhagavat, Carlo Zavattari, Peter D. Albrecht, William L. Luter
Filed: 1 Jun 23
Utility
Methods for Forming Single Crystal Silicon Ingots with Reduced Carbon Contamination and Susceptors for Use In Such Methods
7 Dec 23
A graphite susceptor for supporting a quartz crucible during a crystal growth process includes a body having an interior surface and a coating deposited onto the interior surface.
Richard J. Phillips, William Luter, Carissima Marie Hudson, JaeWoo Ryu
Filed: 31 May 23
Utility
Novel Buffer Layer Structure to Improve Gan Semiconductors
23 Nov 23
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and 0≤y≤1; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Jia-Zhe Liu, Chih-Yuan Chuang, Po Jung Lin, Hong Che Lin
Filed: 14 Jul 23
Utility
High Electron Mobility Transistor Structure and Method of Manufacturing the Same
16 Nov 23
A method of manufacturing a high electron mobility transistor (HEMT) structure is disclosed.
JIA-ZHE LIU, TZU-YAO LIN
Filed: 3 Apr 23
Utility
Epitaxial Structure and Method of Manufacturing the Same
9 Nov 23
A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face having an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer having a thickness less than 50 nm on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer.
PO-JUNG LIN, HAN-ZONG WU
Filed: 1 Feb 23
Utility
Epitaxial Structure and Method of Manufacturing the Same
9 Nov 23
A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face, and the growth face has an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer.
PO-JUNG LIN, HAN-ZONG WU
Filed: 1 Feb 23
Utility
Epitaxial Structure and Method of Manufacturing the Same
9 Nov 23
A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon nitride (SiC) substrate having a carbon face (C-face) without an off-angle; B: form an amorphous structure layer on the C-face of the SiC substrate; C: deposit a first group III nitride layer on the amorphous structure layer; and D: deposit a second group III nitride layer on the first group III nitride layer.
PO-JUNG LIN, HAN-ZONG WU
Filed: 1 Feb 23
Utility
Cleaning Tools and Methods for Cleaning the Pull Cable of an Ingot Puller Apparatus
2 Nov 23
Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed.
Chin-Hung Ho, Chih-Kai Cheng, Chen-Yi Lin, Feng-Chien Tsai, Tung-Hsiao Li, YoungGil Jeong, Jin Yong Uhm
Filed: 14 Apr 23
Utility
Semiconductor Wafer Thermal Removal Control
2 Nov 23
A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller.
Emanuele Corsi, Ezio Bovio
Filed: 1 Jun 23
Utility
Method for Collecting Dust from Single Crystal Growth System
2 Nov 23
A method for collecting dust from a single crystal growth system includes providing dry air and oxygen into an exit pipe connecting to the single crystal growth system, blowing a first inert gas into the exit pipe to compel the dust oxide toward a dust collecting device, collecting the dust oxide by the dust collecting device; and providing a rotary pump to transport residues of the dust oxide backward.
Masami Nakanishi, YU-SHENG SU, I-CHING LI
Filed: 3 Jul 23
Utility
Methods for Semiconductor Wafer Processing Using a Radiant Heat Cap In a Semiconductor Wafer Reactor
2 Nov 23
A method of manufacturing a semiconductor wafer in a reaction apparatus includes channeling a process gas into a reaction chamber of the reaction apparatus, heating the semiconductor wafer with a high intensity lamp positioned below the reaction chamber, blocking radiant heat from the high intensity lamp from heating a center region of the semiconductor wafer with a cap positioned on a shaft within the reaction chamber, the cap including a tube and a disc attached to the tube, where the disc generates a uniform temperature distribution on the semiconductor wafer, and depositing a layer on the semiconductor wafer with the process gas, where the uniform temperature distribution forms a uniform thickness of the layer on the semiconductor wafer.
Chieh Hu, Chun-Chin Tu, Lunghsing Hsu
Filed: 12 Jul 23
Utility
Semiconductor Structure and Method of Fabricating the Same
26 Oct 23
A semiconductor structure includes a silicon carbide (SiC) substrate, a nucleation layer and a gallium nitride (GaN) layer.
Po Jung Lin, Jia-Zhe Liu
Filed: 10 Apr 23
Utility
Resistivity Stabilization Measurement of Fat Neck Slabs for High Resistivity and Ultra-high Resistivity Single Crystal Silicon Ingot Growth
26 Oct 23
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed.
Carissima Marie Hudson, HyungMin Lee, JaeWoo Ryu, Richard J. Phillips, Robert Wendell Standley
Filed: 28 Jun 23