229 patents
Page 2 of 12
Utility
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
12 Oct 23
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 14 Jun 23
Utility
Si Ingot Single Crystal
28 Sep 23
A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided.
Kazuo Nakajima, Masami Nakanishi, Yu Sheng Su, Wen-Ching Hsu
Filed: 30 May 23
Utility
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28 Sep 23
A detection system includes a loadcell connected to a gear and motor of a crystal puller apparatus to measure force applied to the gear in a time domain.
Zheng Lu, William L. Luter, Bashar Ahmed Barghouti, Wei-Ru Li
Filed: 16 Mar 23
Utility
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21 Sep 23
A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided.
Kazuo Nakajima, Masami Nakanishi, Yu Sheng Su, Wen-Ching Hsu
Filed: 30 May 23
Utility
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14 Sep 23
An improved high electron mobility transistor (HEMT) structure includes a substrate, a nitride nucleation layer, a nitride buffer layer, a nitride channel layer, and a barrier layer.
Po-Jung LIN, Jia-Zhe LIU
Filed: 17 Nov 22
Utility
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14 Sep 23
An improved high electron mobility transistor (HEMT) structure includes in order a substrate, a nucleation layer, a buffer layer, a channel layer, and a barrier layer, wherein the buffer layer includes a dopant.
PO-JUNG LIN, JIA-ZHE LIU
Filed: 17 Nov 22
Utility
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7 Sep 23
A wafer and a wafer processing method are included.
Wen-Huai Yu, Shih-Che Hung, Hung-Chang Lo, Chun-I Fan, Chia-Chi Tsai, Wen-Ching Hsu
Filed: 2 Mar 23
Utility
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31 Aug 23
A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed.
Chia Ming Liu, Chien Ming Chen, Jui Hung Wang, Hao Chen
Filed: 8 May 23
Utility
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31 Aug 23
Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed.
Chun-Sheng Wu, Hong-Huei Huang, Wei-Chen Chou, Chen-Yi Lin, Feng-Chien Tsai, Zheng Lu
Filed: 2 Feb 23
Utility
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31 Aug 23
A computer device is programmed to store a model for converting shape maps to simulate a portion of an assembly line, receive scan data of a first inspection of a product being assembled, generate a shape map from the scan data of the first inspection, execute the model using the shape map as an input to generate a final shape map of the product, compare the final shape map to one or more thresholds, determine if the final shape map exceeds at least one of the one or more thresholds, and if the determination is that the final shape map exceeds at least one of the one or more thresholds, cause the first device to be adjusted.
Vahid Khalajzadeh, Sumeet S. Bhagavat
Filed: 25 Feb 22
Utility
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17 Aug 23
A liner assembly for a substrate processing system includes a first liner and a second liner.
Arash Abedijaberi, Shawn George Thomas
Filed: 27 Apr 23
Utility
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17 Aug 23
Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed.
Qingmin Liu, Haihe Liang, Junting Yang
Filed: 11 Feb 22
Utility
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10 Aug 23
Methods for producing a product ingot from a silicon melt held within a crucible are disclosed.
Carissima Marie Hudson, JaeWoo Ryu, HyungMin Lee
Filed: 10 Jan 23
Utility
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10 Aug 23
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 11 Apr 23
Utility
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3 Aug 23
A method of manufacturing a semiconductor wafer in a reaction apparatus comprising channeling a process gas into a reaction chamber through the process gas inlet and heating the process gas with the preheat ring having an edge bar.
Chieh Hu, Chun-Chin TU
Filed: 12 Apr 23
Utility
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13 Jul 23
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 7 Mar 23
Utility
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6 Jul 23
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
Filed: 9 Mar 23
Utility
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6 Jul 23
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 13 Mar 23
Utility
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6 Jul 23
A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided.
Po Jung Lin, Ying-Ru Shih, Chenghan Tsao
Filed: 21 Oct 22
Utility
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6 Jul 23
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed.
Matteo Pannocchia, Maria Porrini
Filed: 6 Jan 22