229 patents
Page 6 of 12
Utility
Methods for Forming a Silicon Substrate with Reduced Grown-in Nuclei for Epitaxial Defects and Methods for Forming an Epitaxial Wafer
14 Jul 22
Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed.
Pietro Valcozzena, Maria Porrini, Januscia Duchini
Filed: 1 Apr 22
Utility
Epitaxy Substrate and Epitaxial Wafer Structure
30 Jun 22
An epitaxy substrate including a substrate and an aluminum nitride layer is provided.
Wei Jie Sie
Filed: 17 Dec 21
Utility
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30 Jun 22
Systems for implanting semiconductor structures with ions are disclosed.
Peter Daniel Albrecht, Junnan Wu
Filed: 5 Nov 21
Utility
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30 Jun 22
A reaction apparatus contacts a process gas on a semiconductor wafer during a wafering process.
Chieh Hu, Chun-Chin Tu, Lunghsing Hsu
Filed: 31 Dec 20
Utility
nub2w1s05merdd7hgmm 5p310vko1dhvbsp91jeoaasa0paicet9r3afx
30 Jun 22
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed.
Matteo Pannocchia, Francesca Marchese, James Ho Wai Kitt
Filed: 16 Dec 21
Utility
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30 Jun 22
Additive feed systems for feeding at least two different additives to silicon disposed within a crucible of an ingot puller apparatus are disclosed.
Marco Zardoni, Giancarlo Zago, Giorgio Agostini, Stephan Haringer, James Eoff
Filed: 30 Dec 20
Utility
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30 Jun 22
A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20
Utility
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30 Jun 22
An ingot puller apparatus for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20
Utility
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30 Jun 22
A reaction apparatus includes an upper dome, a lower dome, an upper liner, a lower liner, and a preheat ring.
Chieh Hu, Chun-Chin TU
Filed: 31 Dec 20
Utility
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23 Jun 22
An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
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23 Jun 22
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
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23 Jun 22
An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
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2 Jun 22
Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed.
Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
Filed: 7 Oct 21
Utility
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26 May 22
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed.
Charles R. Lottes, Shawn George Thomas, Henry Frank Erk
Filed: 8 Feb 22
Utility
893ubzxatt1jv iy8tqrqr7g8i3lcsc16zxttt1hq8t
12 May 22
Methods for preparing an ingot in an ingot puller apparatus are disclosed.
Maria Porrini, Sergio Morelli, Mauro DiodÃ
Filed: 12 Nov 20
Utility
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12 May 22
Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed.
Richard Joseph Phillips, Salvador Zepeda
Filed: 20 Jan 21
Utility
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12 May 22
Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed.
Pietro Valcozzena, Maria Porrini, Januscia Duchini
Filed: 17 Dec 20
Utility
7ox1tnzfm7upf1p5mfqutccptcfoismzh5s5tqfsrde8j
12 May 22
A computer device is programmed to receive a plurality of real-time datasets from one or more sensors associated with a tool to be analyzed, calibrate the plurality of real-time datasets, generate a time slide window for each real-time dataset of the plurality of real-time datasets, generate a random probability distribution curve, compare the random probability distribution curve to each time slide window to determine if the time slide window includes anomaly data, and generate prediction results based on the comparison.
Guang-Shin Chen, Chun-Hsien Tu, Tsz-En Hung
Filed: 9 Nov 21
Utility
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5 May 22
Crystal pulling systems having a fluid-cooled exhaust tube are disclosed.
Stephan Haringer, Marco Zardoni, Mauro Dioda, Hariprasad Sreedharamurthy
Filed: 7 Oct 21
Utility
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28 Apr 22
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 7 Jan 22