229 patents
Page 9 of 12
Utility
Semiconductor Wafer Thermal Removal Control
17 Jun 21
A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller.
Emanuele Corsi, Ezio Bovio
Filed: 28 Feb 21
Utility
Systems and Methods for Production of Silicon Using a Horizontal Magnetic Field
17 Jun 21
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot.
JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
Filed: 8 Dec 20
Utility
Methods for Removing an Oxide Film from a Soi Structure and Methods for Preparing a Soi Structure
17 Jun 21
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed.
Charles R. Lottes, Shawn George Thomas, Henry Frank Erk
Filed: 30 Oct 20
Utility
Radio Frequency Silicon on Insulator Wafer Platform with Superior Performance, Stability, and Manufacturability
27 May 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 3 Feb 21
Utility
Epitaxial Structure
20 May 21
An epitaxial structure including at least a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, and a P-type aluminum indium gallium nitride layer is provided.
Jia-Zhe Liu, Tzu-Yao Lin, Ying-Ru Shih
Filed: 18 Nov 20
Utility
Liner Assemblies for Substrate Processing Systems
20 May 21
A liner assembly for a substrate processing system includes a first liner and a second liner.
Arash Abedijaberi, Shawn George Thomas
Filed: 29 Jan 21
Utility
Epitaxial Structure and Semiconductor Device
20 May 21
An epitaxial structure and a semiconductor device are provided in which the epitaxial structure includes at least a SiC substrate, a nucleation layer, and a GaN layer.
Jia-Zhe Liu, Tzu-Yao Lin, Ying-Ru Shih
Filed: 19 Nov 20
Utility
Single Crystal Silicon Ingot Having Axial Uniformity
18 Mar 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Methods for Growing a Nitrogen Doped Single Crystal Silicon Ingot Using Continuous Czochralski Method
18 Mar 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Methods for Forming Single Crystal Silicon Ingots with Improved Resistivity Control
11 Mar 21
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed.
Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
Filed: 15 Oct 20
Utility
Silicon Carbide Crystal
25 Feb 21
A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer.
CHING-SHAN LIN, JIAN-HSIN LU, CHIEN-CHENG LIOU, MAN-HSUAN LIN
Filed: 16 Oct 20
Utility
Epitaxial Structure
18 Feb 21
An epitaxial structure includes a substrate, a buffer layer, a back diffusion barrier layer, a channel layer formed on the back diffusion barrier layer, and a barrier layer formed on the channel layer.
Jia-Zhe Liu, Ying-Ru Shih
Filed: 26 May 20
Utility
Method of Preparing an Isolation Region In a High Resistivity Silicon-on-insulator Substrate
4 Feb 21
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 28 Sep 20
Utility
Production and Use of Dynamic State Charts When Growing a Single Crystal Silicon Ingot
4 Feb 21
Methods for growing a single crystal silicon ingot are disclosed.
Giorgio Agostini, Stephan Haringer, Marco Zardoni
Filed: 27 May 20
Utility
Semiconductor Epitaxial Structure and Method of Forming the Same
21 Jan 21
Provided is a semiconductor epitaxial structure including a nucleation layer disposed on a substrate; a buffer layer disposed on the nucleation layer; a semiconductor layer disposed on the buffer layer; a barrier layer disposed on the semiconductor layer; and a cap layer disposed on the barrier layer.
Yen-Lun Huang, Ke-Hong Su, Ying-Ru Shih
Filed: 2 Jul 20
Utility
Method of Counting Sheet Materials
14 Jan 21
A method of counting sheet materials applied to a pile of sheet materials, comprising the steps of: receiving an image of the pile of sheet materials; obtaining a grayscale value of a plurality of pixels along a first image axis direction of the image to form an one dimensional first array; performing binarization of the first elements of the first array with a first threshold value to form an one dimensional second array; obtaining the number of the second elements of a first value appearing between two second elements of a second value in the second array to form a third array; dividing the elements of the third array into a first cluster and a second cluster with a second threshold value; counting the number of the third elements belonging to the first cluster and defining said number as the number of the first sheet materials.
WEI-CHENG CHANG, CHIA-YEH LEE, HAN-ZONG WU
Filed: 23 Jun 20
Utility
Semiconductor Substrate Polishing Methods
14 Jan 21
Polishing slurries for polishing semiconductor substrates are disclosed.
Hui Wang, Vandan Tanna, Tracy Michelle Ragan, James Raymond Capstick
Filed: 29 Sep 20
Utility
High Resistivity Silicon-on-insulator Substrate Having Enhanced Charge Trapping Efficiency
14 Jan 21
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 30 Sep 20
Utility
Method of Preparing an Isolation Region In a High Resistivity Silicon-on-insulator Substrate
14 Jan 21
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 28 Sep 20
Utility
Semiconductor Device
6 Jan 21
A semiconductor device includes a substrate, an initial layer, and a superlattice stack.
Ming-Shien Hu, Chien-Jen Sun, I-Ching Li, Wen-Ching Hsu
Filed: 21 Sep 20