229 patents
Page 11 of 12
Utility
Methods For Preparing a Doped Ingot
17 Jun 20
Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed.
Roberto Scala, Stephan Haringer, Franco Battan
Filed: 13 Dec 18
Utility
Silicone Carbide Crystals and Manufacturing Method Thereof
17 Jun 20
A silicon carbide crystal and a manufacturing method thereof are provided.
CHING-SHAN LIN, JIAN-HSIN LU, CHIEN-CHENG LIOU, I-CHING LI
Filed: 23 Jun 19
Utility
Slurry Sprayers, Adjustable Supports for Same, and Methods for Slicing a Silicon Ingot
3 Jun 20
A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed.
Chia Ming Liu, Chien Ming Chen, Jui Hung Wang, Hao Chen
Filed: 26 Nov 19
Utility
Direct Formation of Hexagonal Boron Nitride on Silicon Based Dielectrics
13 May 20
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 23 Dec 19
Utility
Direct Formation of Hexagonal Boron Nitride on Silicon Based Dielectrics
13 May 20
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 23 Dec 19
Utility
Manufacturing Method of High Electron Mobility Transistor
22 Apr 20
A manufacturing method of a high electron mobility transistor includes providing an epitaxial stacked structure, wherein the epitaxial stacked structure includes a semiconductor substrate, a buffer layer formed on the semiconductor substrate, a channel layer formed on the buffer layer, an intermediate layer formed on the channel layer, and a barrier layer formed on the intermediate layer; forming a source and a drain on the barrier layer; performing a microwave annealing process, wherein the conditions of the microwave annealing process include a temperature between 450° C. and 550° C., a frequency between 5.8 GHz and 6.2 GHz, and a time between 150 seconds and 250 seconds; and forming a gate on the barrier layer between the source and the drain.
Hsien-Chin Chiu, Ying-Ru Shih
Filed: 21 Oct 18
Utility
High Resistivity Silicon-on-insulator Substrate Having Enhanced Charge Trapping Efficiency
22 Apr 20
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 17 Dec 19
Utility
Method of Depositing Charge Trapping Polycrystalline Silicon Films on Silicon Substrates with Controllable Film Stress
22 Apr 20
A semiconductor on insulator multilayer structure is provided.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Igor Peidous
Filed: 18 Dec 19
Utility
Semiconductor on Insulator Structure Comprising a Buried High Resistivity Layer
22 Apr 20
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided.
Igor Peidous, Andrew M. Jones, Srikanth Kommu, Horacio Josue Mendez
Filed: 18 Dec 19
Utility
Dopant Concentration Control In Silicon Melt to Enhance the Ingot Quality
15 Apr 20
Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed.
Maria Porrini
Filed: 9 Sep 19
Utility
Iii-nitride Epitaxial Structure
25 Mar 20
An epitaxial structure includes a substrate, a buffer layer, a channel layer, an intermediate layer, and a barrier layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 21 Nov 18
Utility
Systems for Selectively Feeding Chunk Polysilicon or Granular Polysilicon In a Crystal Growth Chamber
11 Mar 20
A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt.
Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
Filed: 12 Nov 19
Utility
Methods for Polishing Semiconductor Substrates That Adjust for Pad-to-pad Variance
11 Mar 20
Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.
Ichiro Yoshimura, Alex Chu, H.J. Chiu, Sumeet Bhagavat, TaeHyeong Kim, Norimasa Katakura, Masaru Kitazawa
Filed: 21 Aug 19
Utility
Epitaxy Substrate and Method of Manufacturing the Same
4 Mar 20
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chun-I Fan, Wen-Ching Hsu
Filed: 15 Jul 19
Utility
Methods for Assessing Semiconductor Structures
19 Feb 20
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed.
Igor Rapoport, Srikanth Kommu, Igor Peidous, Gang Wang, Jeffrey L. Libbert
Filed: 22 Oct 19
Utility
Epitaxial Structure
5 Feb 20
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 25 Jun 19
Utility
High Resistivity Silicon-on-insulator Structure and Method of Manufacture Thereof
22 Jan 20
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
Filed: 24 Sep 19
Utility
Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability
15 Jan 20
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 10 Jul 19
Utility
Radio Frequency Silicon on Insulator Wafer Platform with Superior Performance, Stability, and Manufacturability
15 Jan 20
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 25 Jun 19
Utility
Manufacturing Method of Smoothing a Semiconductor Surface
18 Dec 19
A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface.
Gang Wang, Charles R. Lottes, Sasha Kweskin
Filed: 28 Aug 19