229 patents
Page 10 of 12
Utility
Method for Transfer of a Thin Layer of Silicon
6 Jan 21
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
Gaurab Samanta, Salvador Zepeda
Filed: 17 Sep 20
Utility
High Resistivity Soi Wafers and a Method of Manufacturing Thereof
6 Jan 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 15 Sep 20
Utility
Manufacturing Method of Smoothing a Semiconductor Surface
30 Dec 20
A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface.
Gang Wang, Charles R. Lottes, Sasha Kweskin
Filed: 16 Sep 20
Utility
Systems and Methods for Production of Low Oxygen Content Silicon
16 Dec 20
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 29 Jun 20
Utility
Methods for Growing a Single Crystal Silicon Ingot Using Continuous Czochralski Method
21 Oct 20
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 13 Apr 20
Utility
High Resistivity Silicon-on-insulator Substrate Having Enhanced Charge Trapping Efficiency
21 Oct 20
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 5 Jul 20
Utility
Process for Preparing Ingot Having Reduced Distortion at Late Body Length
14 Oct 20
A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
Filed: 2 Apr 20
Utility
Methods for Processing Semiconductor Wafers Having a Polycrystalline Finish
30 Sep 20
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Guoqiang David Zhang, Mark Crooks, Tracy Michelle Ragan
Filed: 14 Jun 20
Utility
Semiconductor Device and Manufacturing Method Thereof
16 Sep 20
A semiconductor device and a manufacturing method thereof are provided.
Hsien-Chin Chiu, Ying-Ru Shih
Filed: 29 Dec 19
Utility
High Resistivity Silicon-on-insulator Wafer Manufacturing Method for Reducing Substrate Loss
19 Aug 20
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Qingmin Liu
Filed: 5 May 20
Utility
Semiconductor on Insulator Structure Comprising a Plasma Nitride Layer and Method of Manufacture Thereof
12 Aug 20
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Sasha Joseph Kweskin
Filed: 30 Apr 20
Utility
High Resistivity Single Crystal Silicon Ingot and Wafer Having Improved Mechanical Strength
8 Jul 20
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Filed: 5 Jun 17
Utility
Mono-crystalline Silicon Growth Apparatus
1 Jul 20
A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible.
CHUN-HUNG CHEN, HSING-PANG WANG, Wen-Ching Hsu, I-CHING LI
Filed: 26 Dec 19
Utility
Mono-crystalline Silicon Growth Method
1 Jul 20
A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base.
CHUN-HUNG CHEN, HSING-PANG WANG, WEN-CHING HSU, I-CHING LI
Filed: 26 Dec 19
Utility
Resistivity Stabilization Measurement of Fat Neck Slabs for High Resistivity and Ultra-high Resistivity Single Crystal Silicon Ingot Growth
1 Jul 20
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed.
Carissima Marie Hudson, HyungMin Lee, JaeWoo Ryu, Richard J. Phillips, Robert Wendell Standley
Filed: 10 Dec 19
Utility
CorrectedSystem for Introducing Dopant into a Melt of Semiconductor or Solar-grade Material
24 Jun 20
A method of growing a doped monocrystalline ingot using a crystal growing system is provided.
Stephan Haringer, Marco D'Angella, Mauro DiodÃ
Filed: 27 Dec 18
Utility
Center Slab Lapping and Resistivity Measurement During Single Crystal Silicon Ingot Production
24 Jun 20
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed.
HyungMin Lee, JaeWoo Ryu, Richard Phillips, YoungJung Lee, Carissima Marie Hudson
Filed: 20 Dec 18
Utility
Sample Rod Center Slab Resistivity Measurement During Single Crystal Silicon Ingot Production
24 Jun 20
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed.
HyungMin Lee, JaeWoo Ryu, Richard Phillips, YoungJung Lee, Carissima Marie Hudson
Filed: 20 Dec 18
Utility
Sample Rod Center Slab Resistivity Measurement With Four-Point Probe During Single Crystal Silicon Ingot Production
24 Jun 20
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed.
HyungMin Lee, JaeWoo Ryu, Richard Phillips, YoungJung Lee, Carissima Marie Hudson
Filed: 20 Dec 18
Utility
Ingot Puller Apparatus that Include A Doping Conduit With A Porous Partition Member For Subliming Solid Dopant
17 Jun 20
Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed.
Roberto Scala, Stephan Haringer, Franco Battan
Filed: 13 Dec 18