229 patents
Page 12 of 12
Utility
Method for Transfer of a Thin Layer of Silicon
11 Dec 19
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
Gaurab Samanta, Salvador Zepeda
Filed: 22 May 19
Utility
Gas Doping Systems for Controlled Doping of a Melt of Semiconductor or Solar-grade Material
13 Nov 19
A crystal pulling apparatus for producing an ingot is provided.
Stephan Haringer, Roberto Scala, Marco D'Angella
Filed: 22 Jul 19
Utility
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6 Nov 19
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Qingmin Liu, Robert Wendell Standley
Filed: 16 Jul 19
Utility
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30 Oct 19
A method is disclosed for promoting the formation of uniform platelets in a monocrystalline semiconductor donor substrate by irradiating the monocrystalline semiconductor donor substrate with light.
Gang Wang, Charles Lottes
Filed: 8 Apr 19
Utility
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30 Oct 19
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 10 Jun 19
Utility
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30 Oct 19
A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface.
Gang Wang, Charles R. Lottes, Sasha Kweskin
Filed: 8 Jul 19
Utility
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9 Oct 19
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 10 Jun 19
Utility
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9 Oct 19
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 10 Jun 19
Utility
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2 Oct 19
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 14 Mar 19