157 patents
Utility
Systems and methods for production of silicon using a horizontal magnetic field
16 Jan 24
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot.
JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
Filed: 8 Dec 20
Utility
Ingot puller apparatus having heat shields with voids therein
16 Jan 24
Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed.
Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
Filed: 7 Oct 21
Utility
Methods for producing a single crystal silicon ingot using a vaporized dopant
9 Jan 24
A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20
Utility
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
9 Jan 24
Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed.
Matteo Pannocchia, Maria Porrini
Filed: 6 Jan 22
Utility
Manufacturing method of silicon carbide ingot
2 Jan 24
A manufacturing method of a silicon carbide ingot includes the following.
Ching-Shan Lin
Filed: 27 Jul 21
Utility
Material analysis method
2 Jan 24
A material analysis method is provided.
Shang-Chi Wang, Wen-Ching Hsu, Chia-Chi Tsai, I-Ching Li
Filed: 4 May 22
Utility
Method for collecting dust from single crystal growth system and dust collecting system thereof
19 Dec 23
A dust collecting system for single crystal growth system includes an air compressor, a dust collecting device, a first inert gas source, a rotary pump and a scrubber.
Masami Nakanishi, Yu-Sheng Su, I-Ching Li
Filed: 22 Jun 20
Utility
Systems and methods for enhanced wafer manufacturing
19 Dec 23
A computer device includes at least one processor in communication with at least one memory device.
Sumeet S. Bhagavat
Filed: 6 Jul 22
Utility
Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
19 Dec 23
A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.
Sasha Joseph Kweskin, Henry Frank Erk
Filed: 3 Mar 17
Utility
Wafer
5 Dec 23
Provided is a wafer including a ring part and a processed part.
Chan-Ju Wen, Chih-Wei Chang, Su Lien Chou
Filed: 24 Jan 22
Utility
Silicon carbide seed crystal and method of manufacturing silicon carbide ingot
21 Nov 23
Ching-Shan Lin
Filed: 27 Jul 21
Utility
Systems for producing a single crystal silicon ingot using a vaporized dopant
24 Oct 23
An ingot puller apparatus for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20
Utility
Production and use of dynamic state charts when growing a single crystal silicon ingot
24 Oct 23
Methods for growing a single crystal silicon ingot are disclosed.
Giorgio Agostini, Stephan Haringer, Marco Zardoni
Filed: 6 Jul 22
Utility
Methods for stripping and cleaning semiconductor structures
24 Oct 23
Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed.
Qingmin Liu, Haihe Liang, Junting Yang
Filed: 11 Feb 22
Utility
Methods for preparing a SOI structure
24 Oct 23
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed.
Charles R. Lottes, Shawn George Thomas, Henry Frank Erk
Filed: 8 Feb 22
Utility
Silicon carbide wafer and method of fabricating the same
17 Oct 23
A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm.
Ching-Shan Lin
Filed: 27 Jul 21
Utility
Silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot
10 Oct 23
Ching-Shan Lin
Filed: 27 Jul 21
Utility
Use of buffer members during growth of single crystal silicon ingots
26 Sep 23
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed.
Matteo Pannocchia, Francesca Marchese, James Ho Wai Kitt
Filed: 16 Dec 21
Utility
Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski
26 Sep 23
Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed.
JaeWoo Ryu, Carissima Marie Hudson, JunHwan Ji, WooJin Yoon
Filed: 25 May 21
Utility
Apparatus for stressing semiconductor substrates
19 Sep 23
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19