157 patents
Page 4 of 8
Utility
Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
26 Apr 22
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism.
Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
Filed: 19 Oct 16
Utility
Epitaxial structure
26 Apr 22
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 26 Jun 19
Utility
edqxpryui9v4v8kevfkrbjni9eu29 oyd
29 Mar 22
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 24 Dec 19
Utility
nj3t2sr4fzra33y3ll6sejzy2rhts33vccur52q is5sral2sz
22 Mar 22
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19
Utility
x1vw384v 6h175526zaocbs
22 Mar 22
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed.
Charles R. Lottes, Shawn George Thomas, Henry Frank Erk
Filed: 30 Oct 20
Utility
vadlj08fjrcspvkppkemmxmb6qrherrhffv842xtev1h
15 Mar 22
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19
Utility
5u36o3mgl1h3r ixahy59qasimq8ubhdk5b
15 Mar 22
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19
Utility
s2wj3 kg2wrp5vsr6gjwr61tf95af2lmttj3pkj
15 Mar 22
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 24 Dec 19
Utility
2o74qc18l4xkzhce564o0a4aotmmia8px4gfpm1ydonn6i51zri3noh4
1 Feb 22
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 30 Sep 20
Utility
yvj01lyjwcqpf3almxnd2 9xi0vacubf2kvco0093zuwofjzxos8
28 Dec 21
A semiconductor device and a manufacturing method thereof are provided.
Hsien-Chin Chiu, Ying-Ru Shih
Filed: 30 Dec 19
Utility
xbahafhsha891pi3jfk9jno0hsrecc5ddrlg9xyv3uav4a9np776
14 Dec 21
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 15 Mar 19
Utility
z5q3neh8byhps6dmuxna9fl1gziu1bo
23 Nov 21
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Qingmin Liu
Filed: 6 May 20
Utility
reocxv8ffv8n 7zs9w6gelm4t
16 Nov 21
A method is disclosed for promoting the formation of uniform platelets in a monocrystalline semiconductor donor substrate by irradiating the monocrystalline semiconductor donor substrate with light.
Gang Wang, Charles Lottes
Filed: 9 Apr 19
Utility
lob1owuqxkl5 snlwealf0bv7nloh24s66qbom
12 Oct 21
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Filed: 6 Jun 17
Utility
ht0eblhyfsh uj5g5y5au9gxl
12 Oct 21
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
Filed: 25 Sep 19
Utility
tldf5hvc725l87owetpusoji1iu0rqtfvldra8w2wydqvfmv0i5812w
5 Oct 21
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 30 Jun 20
Utility
d1jh1u4h6ah6lmheejq z1lgf2hu41o3p0d18
5 Oct 21
A semiconductor on insulator multilayer structure is provided.
Igor Peidous, Lu Fei, Jeffrey L. Libbert, Andrew M. Jones, Alex Usenko, Gang Wang, Shawn George Thomas, Srikanth Kommu
Filed: 28 Dec 18
Utility
96izj9vgus5q8ovl9ug0f3jwnb38db8kmc6
21 Sep 21
A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer.
WonJin Choi, JunHwan Ji, UiSung Jung, JungHan Kim, YoungJung Lee, ChanRae Cho
Filed: 10 Dec 18
Utility
1r59a7t zqg926xn3gj3qurdkf9vnu6q4mbylr7gyxcbsddvr70cm2hopubt
7 Sep 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
hp1f88wuacm0imwg1tdskk30iqfpkwgyf3
7 Sep 21
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Sasha Joseph Kweskin
Filed: 3 Mar 17