157 patents
Page 4 of 8
Utility
Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
26 Apr 22
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism.
Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
Filed: 19 Oct 16
Utility
Epitaxial structure
26 Apr 22
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 26 Jun 19
Utility
Direct formation of hexagonal boron nitride on silicon based dielectrics
29 Mar 22
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 24 Dec 19
Utility
Apparatus for stressing semiconductor substrates
22 Mar 22
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19
Utility
Methods for removing an oxide film from a SOI structure and methods for preparing a SOI structure
22 Mar 22
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed.
Charles R. Lottes, Shawn George Thomas, Henry Frank Erk
Filed: 30 Oct 20
Utility
Apparatus for stressing semiconductor substrates
15 Mar 22
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19
Utility
Apparatus for stressing semiconductor substrates
15 Mar 22
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Robert J. Falster, Vladimir V. Voronkov, John A. Pitney, Peter D. Albrecht
Filed: 11 Jun 19
Utility
Direct formation of hexagonal boron nitride on silicon based dielectrics
15 Mar 22
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 24 Dec 19
Utility
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
1 Feb 22
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 30 Sep 20
Utility
Semiconductor device and manufacturing method thereof
28 Dec 21
A semiconductor device and a manufacturing method thereof are provided.
Hsien-Chin Chiu, Ying-Ru Shih
Filed: 30 Dec 19
Utility
Epitaxy substrate and method of manufacturing the same
14 Dec 21
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 15 Mar 19
Utility
High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
23 Nov 21
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Qingmin Liu
Filed: 6 May 20
Utility
Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate
16 Nov 21
A method is disclosed for promoting the formation of uniform platelets in a monocrystalline semiconductor donor substrate by irradiating the monocrystalline semiconductor donor substrate with light.
Gang Wang, Charles Lottes
Filed: 9 Apr 19
Utility
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
12 Oct 21
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Filed: 6 Jun 17
Utility
High resistivity silicon-on-insulator structure and method of manufacture thereof
12 Oct 21
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
Filed: 25 Sep 19
Utility
Systems and methods for production of low oxygen content silicon
5 Oct 21
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 30 Jun 20
Utility
High resistivity semiconductor-on-insulator wafer and a method of manufacturing
5 Oct 21
A semiconductor on insulator multilayer structure is provided.
Igor Peidous, Lu Fei, Jeffrey L. Libbert, Andrew M. Jones, Alex Usenko, Gang Wang, Shawn George Thomas, Srikanth Kommu
Filed: 28 Dec 18
Utility
Method of treating a single crystal silicon ingot to improve the LLS ring/core pattern
21 Sep 21
A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer.
WonJin Choi, JunHwan Ji, UiSung Jung, JungHan Kim, YoungJung Lee, ChanRae Cho
Filed: 10 Dec 18
Utility
Single crystal silicon ingot having axial uniformity
7 Sep 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
7 Sep 21
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Sasha Joseph Kweskin
Filed: 3 Mar 17