157 patents
Page 7 of 8
Utility
Systems and methods for production of low oxygen content silicon
17 Aug 20
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 30 Nov 16
Utility
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
10 Aug 20
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 17 Dec 19
Utility
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29 Jun 20
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Guoqiang David Zhang, Mark Crooks, Tracy Michelle Ragan
Filed: 25 May 16
Utility
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8 Jun 20
Cleave systems for separating bonded wafer structures, mountable cleave monitoring systems and methods for separating bonded wafer structures are disclosed.
Justin Scott Kayser, John Francis Valley, James Dean Eoff
Filed: 8 Jan 18
Utility
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1 Jun 20
A method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided.
Igor Peidous, Illaria Katia Marianna Pellicano
Filed: 20 Aug 18
Utility
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18 May 20
Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw.
Peter D. Albrecht, Carlos Zavattari, Sumeet S. Bhagavat, Vandan Tanna, Uwe Hermes
Filed: 15 May 19
Utility
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18 May 20
A method for varying a removal profile of a silicon wafer during polishing using a polishing apparatus is provided.
Emanuele Corsi, Ezio Bovio
Filed: 22 Jun 16
Utility
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18 May 20
A semiconductor on insulator multilayer structure is provided.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Igor Peidous
Filed: 11 Nov 18
Utility
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18 May 20
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 27 Apr 17
Utility
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27 Apr 20
A method for lithography nanotopography metrology is provided.
John F. Valley
Filed: 27 Aug 18
Utility
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20 Apr 20
An epitaxial structure includes a substrate, a buffer layer, a channel layer, an intermediate layer, and a barrier layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 21 Nov 18
Utility
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13 Apr 20
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided.
Igor Peidous, Andrew M Jones, Srikanth Kommu, Horacio Josue Mendez
Filed: 13 Feb 17
Utility
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30 Mar 20
A bonded substrate for epitaxial growth and a method for forming the same are disclosed.
Chun-I Fan, Chih-Yuan Chuang, Man-Hsuan Lin, Wen-Ching Hsu
Filed: 22 Mar 18
Utility
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23 Mar 20
Methods for polishing semiconductor substrates are disclosed.
Alex Chu, Hsin-Yi Chi, Francis Hung, Jones Yang, H. J. Chiu, J. W. Lu
Filed: 20 Dec 16
Utility
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16 Mar 20
A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.
Sasha Joseph Kweskin
Filed: 2 Mar 17
Utility
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2 Mar 20
A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt.
Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
Filed: 12 Mar 19
Utility
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24 Feb 20
A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 27 Sep 16
Utility
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24 Feb 20
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.
Sasha Joseph Kweskin
Filed: 2 Mar 17
Utility
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10 Feb 20
A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly.
Richard J. Phillips, Soubir Basak, Gaurab Samanta
Filed: 13 Mar 18
Utility
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27 Jan 20
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 8 Oct 17