157 patents
Page 3 of 8
Utility
Epitaxial structure
20 Dec 22
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
Methods for etching a semiconductor structure and for conditioning a processing reactor
29 Nov 22
Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed.
Gang Wang
Filed: 13 May 21
Utility
ix3y9jamdut1ioxmpo0eip8ag70efed939gdgis4s3o
22 Nov 22
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided.
Igor Peidous, Andrew M Jones, Srikanth Kommu, Horacio Josue Mendez
Filed: 19 Dec 19
Utility
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15 Nov 22
Additive feed systems for feeding at least two different additives to silicon disposed within a crucible of an ingot puller apparatus are disclosed.
Marco Zardoni, Giancarlo Zago, Giorgio Agostini, Stephan Haringer, James Eoff
Filed: 30 Dec 20
Utility
y52124zpekr0qji4xtm5693goks7pur5ziyun8or7b1av3u
8 Nov 22
Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed.
Gang Wang
Filed: 13 May 21
Utility
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27 Sep 22
An epitaxial structure and a semiconductor device are provided in which the epitaxial structure includes at least a SiC substrate, a nucleation layer, and a GaN layer.
Jia-Zhe Liu, Tzu-Yao Lin, Ying-Ru Shih
Filed: 19 Nov 20
Utility
g1cfwqh6888jp83akqsafer8ad0zw4gv1u9mshgvrhvma41tgawu
13 Sep 22
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
Gaurab Samanta, Salvador Zepeda
Filed: 18 Sep 20
Utility
ah63p2m3wqh 1lhplv11kgnbhhcg4cb7wri15gbc5om3gekf7rb
16 Aug 22
Methods for growing a single crystal silicon ingot are disclosed.
Giorgio Agostini, Stephan Haringer, Marco Zardoni
Filed: 27 May 20
Utility
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16 Aug 22
A computer device is provided.
Sumeet S. Bhagavat
Filed: 10 Feb 20
Utility
s9mm8zxddtzu0opm5 lqihg28tdz2cmz27ow89bo75i76cre0cdsogyxn5
9 Aug 22
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 14 Apr 20
Utility
wbznlaiw0uriqwnbf0zrjwrcbpe46ek4
5 Jul 22
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
5knn3sy2h0ywmsx64bdklyenz20mie3mlm71tcypzmsaoq7912
5 Jul 22
A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base.
Chun-Hung Chen, Hsing-Pang Wang, Wen-Ching Hsu, I-Ching Li
Filed: 27 Dec 19
Utility
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5 Jul 22
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 28 Sep 20
Utility
ys0rm80ftsvj65hazitvo6ul4nstuyqcc1fdsqhlqzjexa0aunr
21 Jun 22
Polishing slurries for polishing semiconductor substrates are disclosed.
Hui Wang, Vandan Tanna, Tracy Michelle Ragan, James Raymond Capstick
Filed: 29 Sep 20
Utility
psjxibem5wzzavv 83637pfqcmy
7 Jun 22
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Guoqiang David Zhang, Mark Crooks, Tracy Michelle Ragan
Filed: 15 Jun 20
Utility
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31 May 22
A liner assembly for a substrate processing system includes a first liner and a second liner.
Arash Abedijaberi, Shawn George Thomas
Filed: 28 Dec 18
Utility
s07tv749uxfe1208pieh9sb3tnppooq9977ibgqpj0qgqyb07u7g
31 May 22
A method of growing a doped monocrystalline ingot using a crystal growing system is provided.
Stephan Haringer, Marco D'Angella, Mauro DiodÃ
Filed: 28 Dec 18
Utility
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17 May 22
An epitaxial structure includes a substrate, a buffer layer, a back diffusion barrier layer, a channel layer formed on the back diffusion barrier layer, and a barrier layer formed on the channel layer.
Jia-Zhe Liu, Ying-Ru Shih
Filed: 26 May 20
Utility
v3rtum67lknd1mbz50a0yn2mpl8hacb24c
10 May 22
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
j3wsa8gvku4mn9hj5ujwr85z7m0s 2lzt2opcyjrk
10 May 22
A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible.
Chun-Hung Chen, Hsing-Pang Wang, Wen-Ching Hsu, I-Ching Li
Filed: 27 Dec 19