157 patents
Page 5 of 8
Utility
Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
7 Sep 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
7 Sep 21
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 29 Jul 15
Utility
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17 Aug 21
A method of counting sheet materials applied to a pile of sheet materials, comprising the steps of: receiving an image of the pile of sheet materials; obtaining a grayscale value of a plurality of pixels along a first image axis direction of the image to form an one dimensional first array; performing binarization of the first elements of the first array with a first threshold value to form an one dimensional second array; obtaining the number of the second elements of a first value appearing between two second elements of a second value in the second array to form a third array; dividing the elements of the third array into a first cluster and a second cluster with a second threshold value; counting the number of the third elements belonging to the first cluster and defining said number as the number of the first sheet materials.
Wei-Cheng Chang, Chia-Yeh Lee, Han-Zong Wu
Filed: 23 Jun 20
Utility
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10 Aug 21
A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt.
Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
Filed: 13 Nov 19
Utility
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10 Aug 21
A method of growing a doped monocrystalline ingot using a crystal growing system is provided.
Stephan Haringer, Marco D'Angella, Mauro DiodÃ
Filed: 28 Dec 18
Utility
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10 Aug 21
Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed.
Maria Porrini
Filed: 10 Sep 19
Utility
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3 Aug 21
Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.
Ichiro Yoshimura, Alex Chu, H. J. Chiu, Sumeet Bhagavat, TaeHyeong Kim, Norimasa Katakura, Masaru Kitazawa
Filed: 22 Aug 19
Utility
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3 Aug 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 16 Sep 20
Utility
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3 Aug 21
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed.
Igor Rapoport, Srikanth Kommu, Igor Peidous, Gang Wang, Jeffrey L. Libbert
Filed: 23 Oct 19
Utility
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27 Jul 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 11 Jul 19
Utility
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27 Jul 21
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism.
Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
Filed: 31 Dec 18
Utility
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29 Jun 21
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 27 Jun 18
Utility
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22 Jun 21
A silicon carbide crystal and a manufacturing method thereof are provided.
Ching-Shan Lin, Jian-Hsin Lu, Chien-Cheng Liou, I-Ching Li
Filed: 24 Jun 19
Utility
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22 Jun 21
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Alexis Grabbe, Hui Wang, Alex Chu
Filed: 29 Sep 16
Utility
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8 Jun 21
Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed.
Roberto Scala, Stephan Haringer, Franco Battan
Filed: 14 Dec 18
Utility
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8 Jun 21
Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed.
Roberto Scala, Stephan Haringer, Franco Battan
Filed: 14 Dec 18
Utility
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27 Apr 21
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 18 May 18
Utility
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30 Mar 21
A polishing assembly for polishing of silicon wafers is provided.
Emanuele Corsi, Ezio Bovio
Filed: 28 Jun 18
Utility
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23 Mar 21
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 27 Jun 18
Utility
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16 Mar 21
A non-transitory computer-readable storage media having computer-executable instructions embodied thereon for operating a polishing assembly for polishing of silicon wafers is provided.
Emanuele Corsi, Ezio Bovio
Filed: 28 Jun 18