157 patents
Page 6 of 8
Utility
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
9 Mar 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 26 Jun 19
Utility
Methods for forming single crystal silicon ingots with improved resistivity control
16 Feb 21
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed.
Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
Filed: 27 Dec 17
Utility
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2 Feb 21
A liner assembly for a substrate processing system includes a first liner and a second liner.
Arash Abedijaberi, Shawn George Thomas
Filed: 28 Dec 18
Utility
79sxesjcntesmhq7jp6ldx9i81viosvnqj1v3w68fg42aw1d7fxza6fc5n
2 Feb 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 8 Aug 18
Utility
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2 Feb 21
Cleave systems for separating bonded wafer structures, mountable cleave monitoring systems and methods for separating bonded wafer structures are disclosed.
Justin Scott Kayser, John Francis Valley, James Dean Eoff
Filed: 8 Mar 19
Utility
aivreitit1bo8dwshy9ttw5fuzfuobtcz
12 Jan 21
A crystal pulling apparatus for producing an ingot is provided.
Stephan Haringer, Roberto Scala, Marco D'Angella
Filed: 20 Dec 18
Utility
obmjye5rvetsooy6ee4fsruc2rhbqx2qvn7zb
30 Nov 20
A silicon carbide crystal and a method for manufacturing the same are disclosed.
Ching-Shan Lin, Jian-Hsin Lu, Chien-Cheng Liou, Man-Hsuan Lin
Filed: 29 Mar 18
Utility
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9 Nov 20
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 5 Jul 20
Utility
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9 Nov 20
Systems and methods for processing semiconductor structures are provided.
Charles Robert Lottes
Filed: 28 May 19
Utility
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2 Nov 20
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 12 Mar 19
Utility
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26 Oct 20
A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface.
Gang Wang, Charles R. Lottes, Sasha Kweskin
Filed: 28 Aug 19
Utility
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26 Oct 20
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
Gaurab Samanta, Salvador Zepeda
Filed: 22 May 19
Utility
9mu87f5q894pttpx8pblvyzbyudgzw5iceje
19 Oct 20
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Qingmin Liu
Filed: 26 Dec 18
Utility
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19 Oct 20
Polishing slurries for polishing semiconductor substrates are disclosed.
Hui Wang, Vandan Tanna, Tracy Michelle Ragan, James Raymond Capstick
Filed: 1 Oct 18
Utility
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5 Oct 20
A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates.
Gang Wang, Michael R. Seacrist
Filed: 4 Mar 19
Utility
atpzplqh4ayeuf6fc7ptli2isldon88eqybo8r07r1y84dqolm29dt6
5 Oct 20
Methods for forming single crystal silicon ingots with improved resistivity control.
Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
Filed: 26 Jun 18
Utility
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5 Oct 20
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Qingmin Liu, Robert Wendell Standley
Filed: 16 Jul 19
Utility
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21 Sep 20
A semiconductor on insulator multilayer structure is provided.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Igor Peidous
Filed: 18 Dec 19
Utility
nkdg8ka4gpx5tbkf9bndcvr6wxpi1mvvvhhhc
21 Sep 20
Methods for forming single crystal silicon ingots with improved resistivity control.
Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
Filed: 26 Jun 18
Utility
s5rfuut3p3iqsqo3mg7x8t29go
24 Aug 20
A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface.
Gang Wang, Charles R. Lottes, Sasha Kweskin
Filed: 8 Jul 19