157 patents
Page 2 of 8
Utility
Bonding wafer structure and method of manufacturing the same
12 Sep 23
A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer.
Ying-Ru Shih, Wei Li Wu, Hung-Chang Lo
Filed: 7 Jul 21
Utility
Slurry sprayers, adjustable supports for same, and methods for slicing a silicon ingot
12 Sep 23
A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed.
Chia Ming Liu, Chien Ming Chen, Jui Hung Wang, Hao Chen
Filed: 27 Nov 19
Utility
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12 Sep 23
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 12 Mar 21
Utility
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25 Jul 23
A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller.
Emanuele Corsi, Ezio Bovio
Filed: 28 Feb 21
Utility
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25 Jul 23
A mono-crystalline silicon growth apparatus is provided.
Chun-Hung Chen, Hsing-Pang Wang, Wen-Ching Hsu, I-Ching Li
Filed: 12 Jul 21
Utility
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18 Jul 23
A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
Jia-Zhe Liu, Yen Lun Huang, Chih-Yuan Chuang, Che Ming Liu, Wen-Ching Hsu, Manhsuan Lin
Filed: 19 Dec 18
Utility
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11 Jul 23
A semiconductor on insulator multilayer structure is provided.
Igor Peidous, Lu Fei, Jeffrey L. Libbert, Andrew M. Jones, Alex Usenko, Gang Wang, Shawn George Thomas, Srikanth Kommu
Filed: 25 Aug 21
Utility
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27 Jun 23
A method of manufacturing an epitaxy substrate is provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 14 Jul 21
Utility
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23 May 23
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Filed: 10 Sep 21
Utility
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23 May 23
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, Hyungmin Lee, Byungchun Kim, Robert J. Falster
Filed: 10 Sep 21
Utility
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11 Apr 23
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 19 Apr 21
Utility
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7 Mar 23
A preheat ring (126) for use in a chemical vapor deposition system includes a first portion and a second portion selectively coupled to the first portion such that the first and second portions combine to form an opening configured to receive a susceptor therein.
Shawn George Thomas, Gang Wang
Filed: 29 Sep 16
Utility
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28 Feb 23
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 28 Jun 21
Utility
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21 Feb 23
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 28 Sep 20
Utility
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21 Feb 23
An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
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21 Feb 23
An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
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21 Feb 23
Methods for producing a single crystal silicon ingot are disclosed.
William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
Filed: 15 May 20
Utility
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27 Dec 22
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chun-I Fan, Wen-Ching Hsu
Filed: 16 Jul 19
Utility
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27 Dec 22
Cleave systems for cleaving a semiconductor structure are disclosed.
Justin Scott Kayser
Filed: 10 Sep 20
Utility
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20 Dec 22
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 3 Feb 21