229 patents
Page 8 of 12
Utility
Semiconductor Substrate Polishing with Polishing Pad Temperature Control
23 Dec 21
A method of preheating a polishing pad of a semiconductor wafer polishing system includes heating a fluid to a first predetermined temperature.
Masaaki Ikeda
Filed: 17 Jun 20
Utility
Method for Collecting Dust from Single Crystal Growth System and Dust Collecting System Thereof
23 Dec 21
A dust collecting system for single crystal growth system includes an air compressor, a dust collecting device, a first inert gas source, a rotary pump and a scrubber.
Masami Nakanishi, YU-SHENG SU, I-CHING LI
Filed: 22 Jun 20
Utility
High Resistivity Semiconductor-on-insulator Wafer and a Method of Manufacture
9 Dec 21
A semiconductor on insulator multilayer structure is provided.
Igor Peidous, Lu Fei, Jeffrey L. Libbert, Andrew M. Jones, Alex Usenko, Gang Wang, Shawn George Thomas, Srikanth Kommu
Filed: 25 Aug 21
Utility
Method for Producing Si Ingot Single Crystal, Si Ingot Single Crystal, and Apparatus Thereof
25 Nov 21
A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided.
Kazuo Nakajima, Masami Nakanishi, Yu Sheng Su, Wen-Ching Hsu
Filed: 19 May 21
Utility
Single Crystal Silicon Ingot Having Axial Uniformity
25 Nov 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 4 Aug 21
Utility
Methods for Growing a Nitrogen Doped Single Crystal Silicon Ingot Using Continuous Czochralski Method
25 Nov 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 4 Aug 21
Utility
Systems and Methods for Production of Low Oxygen Content Silicon
11 Nov 21
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 20 Jul 21
Utility
Method of Manufacturing Epitaxy Substrate
4 Nov 21
A method of manufacturing an epitaxy substrate is provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 14 Jul 21
Utility
Crystal Pulling System and Methods for Producing Monocrystalline Ingots with Reduced Edge Band Defects
4 Nov 21
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism.
Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
Filed: 16 Jul 21
Utility
Mono-crystalline Silicon Growth Apparatus
28 Oct 21
A mono-crystalline silicon growth apparatus is provided.
CHUN-HUNG CHEN, HSING-PANG WANG, Wen-Ching Hsu, I-CHING LI
Filed: 12 Jul 21
Utility
Epitaxial Structure
28 Oct 21
An epitaxial structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a diffusion barrier layer, and a P-type gallium nitride layer sequentially stacked from bottom to top.
TZU-YAO LIN, JIA-ZHE LIU, YING-RU SHIH
Filed: 23 Apr 21
Utility
Epitaxial Structure Having Super-lattice Laminates
28 Oct 21
An epitaxial structure includes a substrate, a lower super-lattice laminate, a middle super-lattice laminate, an upper super-lattice laminate and a channel layer.
WEI-JIE SIE, JIA-ZHE LIU, YING-RU SHIH
Filed: 23 Apr 21
Utility
High Resistivity Soi Wafers and a Method of Manufacturing Thereof
21 Oct 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 28 Jun 21
Utility
CorrectedProcess for Preparing Ingot Having Reduced Distortion at Late Body Length
2 Sep 21
A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
Filed: 3 Apr 20
Utility
Crucible Molds and Unitized Crucibles
26 Aug 21
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
Methods for Forming a Unitized Crucible Assembly
26 Aug 21
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
Systems and Methods for Enhanced Wafer Manufacturing
12 Aug 21
A computer device is provided.
Sumeet S. Bhagavat
Filed: 10 Feb 20
Utility
Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability
5 Aug 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 19 Apr 21
Utility
Methods for Processing Semiconductor Wafers Having a Polycrystalline Finish
5 Aug 21
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Alexis Grabbe, Hui Wang, Alex Chu
Filed: 19 Apr 21
Utility
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
1 Jul 21
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 12 Mar 21